1

Outline
Reading: M&K - 8.1, 8.2, 8.3
Metal-Oxide Semiconductor Field Effect Transistor
Basic Operation
MOS Capacitor
Equilibrium Band Diagram
Flat Band Voltage
Modes of Operation
Charge Electric Field Potential
Threshold Voltage
Output Characteristic
2
Metal Oxide Semiconductor Field Effect Transistor
(MOSFET) Basic Operation
3
General Operation and Channel
4
MOS Capacitor Associated With the Gate
5
MOS Equilibrium Band Diagram
6
Flat Band Voltage
7
How does V
G
affect band diagram and charge profile of
MOS?
c
h
a
r
g
e
0
c
h
a
r
g
e
0
c
h
a
r
g
e
0
8
Charge, Electric Field, and Potential
X
ox
: electric field in oxide
X
s
: electric field in semiconductor
V
B
: total voltage (or potential) drop
V
ox
: voltage across oxide
V
s
: voltage across semiconductor
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Charges in Silicon in Equilibrium
| |
i f
E E
q
x =
1
) ( |
| | ) 0 (
1
) 0 (
i f s
E E
q
= =| |
A
p s
d
qN
x
| c 4
max
=
p A s d
qN Q | c 4
max
=
10
What is the state of this MOS Capacitor?
11
Is this a depletion mode or enhancement mode device?
Is this a n-channel or p-channel device?
12
Threshold Voltage
V
B
: voltage applied to bulk
V
C
: voltage applied to channel
MOS capacitor
n-type diffused
region
With reverse biased drain:
( )
A
B C p s
d
qN
V V
x
+
=
| c 2 2
max
( )
B C p A s d
V V qN Q + = | c 2 2
( ) ( )
B C p A s p C FB G ox n
V V qN V V V C Q + + = | c | 2 2 2
( )
B C p A s
ox
p C FB T
V V qN
C
V V V + + + + = | c | 2 2
1
2
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Output Characteristic (1)
V
D
V
G1
> V
T
> 0
V
G2
V
G3
V
G4
V
G5
V
D(SAT)
V
G
14
Output Characteristic (2)
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Output Characteristic (3)
Device with S and D depletion regions visible.
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V
D
V
G1
> V
T
> 0
V
G2
V
G3
V
G4
V
G5
V
D(SAT)
V
G
Output Characteristic (4)
As V
G
increases the inversion carrier
concentration increases:
the resistance decreases
the voltage needed for pinch off
increases
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Review Questions
1. What is the basic structure of a MOSFET?
2. What is a depletion mode device? What is an
enhancement mode device?
3. In a MOSFET fabricated using a p-type substrate, what
type of carrier is in the channel?
4. In words, what does the flatband condition mean for a
non-ideal MOS capacitor?
5. What is the relationship between V
D
, V
G
, and V
T
at
pinch-off?
6. In the saturation regime, how is I
D
related to V
D
for a
MOSFET?
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Equations and Constants
s M FB
| | | =
A
p s
d
qN
x
| c 4
max
=
p A s d
qN Q | c 4
max
=
( )
A
B C p s
d
qN
V V
x
+
=
| c 2 2
max
( )
B C p A s d
V V qN Q + = | c 2 2
( ) ( )
B C p A s p C FB G ox n
V V qN V V V C Q + + = | c | 2 2 2
( )
B C p A s
ox
p C FB T
V V qN
C
V V V + + + + = | c | 2 2
1
2