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Electronics Engineering (EEC-101)

Objective type questions Unit 1


1. The forward voltage drop across a silicon diode is about. 1). 2.5 V 3). 10 V 2. A diode is used as 1). An amplifier 3). An oscillator 3. The leakage current in a diode is due to 1). Minority Carrier 3). Junction Capacitance 4. A zener diode operates in 1). Forward Bias 3). Both Reverse & Forward Bias 2). Reverse Bias 4). None of these 2). Majority Carrier 4). None of these 2). A rectifier 4). A voltage regulator 2). 3 V 4). 0.7 V

5. The ripple factor of a half wave rectifier is 1). 2 3). 2.5 2). 1.21 4). 0.48

6. If the PIV Rating of a diode is exceeded .. 1). The diode conducts poorly 3). The diode behaves as zener diode 2). The diode is destroyed 4). None of the above

7. A negative clipper removes the ..half cycle of the input voltage. 1). Negative 3). Both 2). Positive 4). None of these

8. If the temperature of a diode increases the leakage current. 1). Remains the same 3). Increases 2). Decreases 4). Becomes Zero

9. If the doping level of a diode is increased, the breakdown voltage.

1). Remains the same 3). Is decreased

2). Is increased 4). None of the above

10. The knee voltage of a crystal diode is approximately equal to.. 1). Applied Voltage 3). Forward Voltage 2). Breakdown Voltage 4). Barrier Potential

11. A trivalent impurity has valance electrons 1). 4 3). 6 12. A hole in a semiconductor is defined as 1). A free electron 3). A free proton 2). The incomplete part of an electron pair bond 4). A free neutron 2). 5 4). 3

13. At absolute zero temperature, an intrinsic semiconductor has 1). A few electrons 3). Many free electrons 2). Many holes 4). No holes or free electrons

14. At room temperature, an intrinsic silicon crystal acts approximately as 1). A battery 3). An insulator 15. A zener diode is used as 1). An amplifier 3). A rectifier 16. A zener diode is always connected in 1). Reverse bias 3). Forward bias 2). Either reverse or forward bias 4). None of the above. 2). A voltage regulator 4). A multivibrator 2). A conductor 4). A piece of copper wire

17. The maximum efficiency of a half- wave rectifier is 1). 40.6 % 3). 50 % 18. The most widely used rectifier is 1). Half wave rectifier 3). Bridge full-wave rectifier 2). Center-tap full-wave rectifier 4). None of the above 2). 81.2 % 4). 25 %

19. An ideal diode in forward bias condition acts as 1). Conductor 3). Resistance 20. For rectification, the diode uses 1). Reverse characteristic 3). Both 2). Forward characteristic 4). None of these 2). Insulator 4). None of these

Unit 2
1. A transistor has 1). One p-n junction 3). Three p-n junctions 2). Two p-n junctions 4). Four p-n junctions

2. The number of depletion regions in a transistor is 1). Four 3). One 3. The base of a transistor is 1). Heavily doped 3). Lightly doped 2). Moderately doped 4). None of these 2). Three 4). Two

4. The element that has the biggest size in a transistor is 1). Collector 3). Emitter 5. The collector of a transistor is 1). Heavily doped 3). Lightly doped 2). Moderately doped 4). None of these 2). Base 4). Collector-Base junction

6. A transistor is a ..operated device 1). Current 3). Both voltage and current 7. In a transistor 1). IC = IE + IB 3). IE = IC IB 2). IB = IC + IE 4). IE = IC + IB 2). Voltage 4). None of these

8. The value of of a transistor is 1). More than 1 3). 1 9. The output impedance of a transistor is 1). High 3). Low 2). Zero 4). Very low 2). Less than 1 4). None of the above

10. In a transistor, the base current is about.. of emitter current 1). 25 % 3). 35 % 11. The input impedance of a transistor is 1). High 3). Very high 2). Low 4). Almost zero 2). 20 % 4). 5 %

12. Most of the majority carriers from the emitter.. 1). Recombine in the base 2). Recombine in the emitter 3). Pass through base to the collector 4). None of these 13. The current IB is 1). Electron current 3). Donor ion current 2). Hole current 4). Acceptor ion current

14. The most commonly used transistor arrangement is 1). Common emitter 3). Common collector 2). Common base 4). None of these

15. The voltage gain of a transistor connected in common collector arrangement is 1). Equal to 1 3). More than 100 2). More than 10 4). Less than 1

16. In which arrangement the input impedance of a transistor is highest? 1). Common emitter 3). Common base 2). Common collector 4). None of these

17. In which arrangement the output impedance of a transistor is highest? 1). Common emitter 3). Common base 2). Common collector 4). None of these

18. In which arrangement the power gain of a transistor is highest? 1). Common emitter 3). Common base 2). Common collector 4). None of these

19. The most commonly used semiconductor in the manufacturing of a transistor is 1). Germanium 3). Carbon 2). Silicon 4). None of these

20. The collector-base junction in a transistor has 1). Forward bias at all times 3). Low resistance 2). Reverse bias at all times 4). None of these

Unit 3
1. A JFET is a .controlled device 1). Current 3). Both current and voltage 2. A JFET is similar in operation with 1). Diode 3). Triode 3. The gate of a JFET is 1). Forward biased 2). Reverse biased 3). Reverse as well as forward biased 4). None of these 4. The input control parameter of a JFET is 1). Gate voltage 3). Drain voltage 5. A MOSFET has 1). Two terminals 3). Four terminals 2). Five terminals 4). Three terminals 2). Source voltage 4). Gate current 2). Pentode 4). Tetrode 2). Voltage 4). None of these

6. The gate voltage in a JFET at which drain current becomes zero is called 1). Saturation voltage 3). Active voltage 2). Pinch-off voltage 4). Cut-off voltage

7. The channel of a JFET is between 1). Gate and Drain 3). Gate and Source 2). Drain and Source 4). Input and Output

8. The pinch-off voltage of a JFET is about 1). 5 V 3). 15 V 9. In the common mode op-amp 1). Both inputs are grounded 3). Inputs are connected together 10. The differential gain is 1). Very High 3). Depends on input voltage 11. The common mode gain is 1). Very High 3). Always Unity 12. A voltage follower 1). Has a voltage gain of 1 3). Has no feedback register 13. The op-amp can amplify 1). A.C. signals only 3). Both A.C. and D.C. signals 14. A common mode signal is applied to 1). The non inverting input 3). Both inputs 2). The inverting input 4). Top of the tail register 2). D.C. signals only 4). Neither D.C. nor A.C. signal 2). Is non inverting 4). Has all of these 2). Very Low 4). Unpredictable 2). Very Low 4). About 100 2). The outputs are connected together 4). The output signals are in phase 2). 0.6 V 4). 25 V

15. Current can not flow to the ground through 1). A mechanical ground 3). A virtual ground 2). An a.c. ground 4). An ordinary ground

16. In a JFET, when drain voltage is equal to pinch-off voltage, the depletion layer 1). Almost touch each other 3). Have moderate gap 2). Have large gap 4). None of the above

17. In a p-channel JFET, the charge carriers are 1). Electrons 3). Both 18. A JFET has power gain 1). Small 3). Very small 19. A MOSFET is also called 1). Many gate JFET 3). Insulated gate JFET 2). Open gate JFET 4). Shorted gate JFET 2). Very High 4). None of the above 2). Holes 4). None of the above

20. The input impedance of a MOSFET is of the order of 1). Few 3). k 2). A few hundreds 4). Several M

Unit 4
1. The binary number 10101 is equivalent to decimal number 1). 19 3). 27 2. The universal gate is 1). NAND gate 3). AND gate 3. The inverter is 1). NOT gate 3). AND gate 2). OR gate 4). None of the above 2). OR gate 4). None of the above 2). 12 4). 21

4. The inputs of a NAND gate are connected together, the resulting circuit is 1). OR gate 3). NOT gate 2). AND gate 4). None of the above

5. The NOR gate is OR gate followed by 1). AND gate 3). NOT gate 2). NAND gate 4). None of the above

6. The NAND gate is AND gate followed by 1). AND gate 3). NOT gate 2). NAND gate 4). None of the above

7. Digital circuits can be made by the repeated use of 1). AND gate 3). NOT gate 8. The only function of NOT gate is to 1). Stop a signal 3). Act as a universal gate 2). Invert input signal 4). None of the above 2). NAND gate 4). None of the above

9. When an input signal 1 is applied to a NOT gate, the output is 1). 0 3). Either 0 or 1 2). 1 4). None of the above

10. In Boolean algebra, the bar sigh (-) indicates 1). AND gate 3). NOT gate 2). OR gate 4). None of the above

11. The given Boolean expression is Y = AB + BA if A = 1 and B = 1, then Y = 1). 1 3). Either 1 or 0 2). 0 4). None of the above

12. In Boolean algebra, the plus sign (+) indicates 1). AND gate 3). NOT gate 13. (A+B) = 1). A + B 3). AB 14. (AB) = 1). A + B 3). AB 2). A B 4). None of the above 2). A B 4). None of the above 2). OR gate 4). None of the above

15. A + AB = 1). B 3). A+B 16. Octal number system has base 1). 16 3). 8 17. Binary number system has base 1). 16 3). 2 18. K-Map is used for 1). Solving logic function 3). Conversion 19. Dont care condition is assumed as 1). 0 3). Either 0 or 1 20. NAND gate can be used to make 1). NOT gate 3). OR gate 2). AND gate 4). All the above 2). 1 4). None of these 2). Adding two numbers 4). None of the above 2). 6 4). 32 2). 2 4). 32 2). A 4). None of the above

Unit 5
1. An ammeter is connected inwith the circuit element whose current is to be measured 1). Series 3). Series or Parallel 2. A voltmeter should have 1). Zero resistance 3). Very Low resistance 2). Very High resistance 4). None of the above 2). Parallel 4). None of the above

3. The material used to coat inside face of CRT is 1). Carbon 3). Silicon 2). Sulphur 4). Phosphorus

4. A CRO is used to measure 1). Voltage 3). Phase 5. An ideal ammeter has 1). Low Resistance 3). Zero Resistance 2). Infinite Resistance 4). High Resistance 2). Frequency 4). All the above

6. The most accurate device for measuring voltage is 1). Voltmeter 3). CRO 2). Multimeter 4). VTVM