TIC116 SERIES SILICON CONTROLLED RECTIFIERS

Copyright 2000, Power Innovations Limited, UK APRIL 1971 - REVISED JUNE 2000

G G G G G

8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 mA
K A G
1 2 3 TO-220 PACKAGE (TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING TIC116D Repetitive peak off-state voltage TIC116M TIC116S TIC116N TIC116D Repetitive peak reverse voltage TIC116M TIC116S TIC116N Continuous on-state current at (or below) 70C case temperature (see Note 1) Average on-state current (180 conduction angle) at (or below) 70C case temperature (see Note 2) Surge on-state current at (or below) 25C case temperature (see Note 3) Peak positive gate current (pulse width 300 s) Peak gate power dissipation (pulse width 300 s) Average gate power dissipation (see Note 4) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL VRRM VDRM SYMBOL VALUE 400 600 700 800 400 600 700 800 8 5 80 3 5 1 -40 to +110 -40 to +125 230 A A A A W W C C C V V UNIT

NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70C derate linearly to zero at 110C. 2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70C derate linearly to zero at 110C. 3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 4. This value applies for a maximum averaging time of 20 ms.

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Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

TIC116 SERIES SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED JUNE 2000

electrical characteristics at 25C case temperature (unless otherwise noted)

PARAMETER IDRM IRRM IGT Repetitive peak off-state current Repetitive peak reverse current Gate trigger current VD = rated VDRM VR = rated VRRM VAA = 12 V VAA = 12 V tp(g) 20 s VGT Gate trigger voltage VAA = 12 V tp(g) 20 s VAA = 12 V tp(g) 20 s VAA = 12 V IH Holding current Initiating IT = 100 mA VAA = 12 V Initiating IT = 100 mA VT dv/dt NOTE On-state voltage Critical rate of rise of off-state voltage IT = 8 A VD = rated VD (see Note 5) IG = 0 TC = 110C 400 TC = - 40C RL = 100 TC = 110C 0.2 100 mA 40 1.7 V V/s RL = 100 0.8 IG = 0 RL = 100 RL = 100 TEST CONDITIONS TC = 110C TC = 110C tp(g) 20 s TC = - 40C 8 MIN TYP MAX 2 2 20 2.5 1.5 V UNIT mA mA mA

5: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body.

thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 3 62.5 UNIT C/W C/W

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TIC116 SERIES SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED JUNE 2000

THERMAL INFORMATION
AVERAGE ON-STATE CURRENT DERATING CURVE
PA - Max Continuous Anode Power Dissipated- W 16 IT(AV) - Maximum Average On-State Current - A 14 12 0 10 Continuous DC 8 6 4 2 0 30 = 180 180 Conduction Angle
TI03AA

MAX ANODE POWER LOSS vs ON-STATE CURRENT

100 TJ = 110C
TI03AB

10

40

50

60

70

80

90

100

110

01 01

10

100

TC - Case Temperature - C

IT - Continuous On-State Current - A

Figure 1. SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION

100 ITM - Peak Half-Sine-Wave Current - A
TI03AC

Figure 2.

TRANSIENT THERMAL RESISTANCE vs CYCLES OF CURRENT DURATION

10 RJC(t) - Transient Thermal Resistance - C/W
TI03AD

10

TC 70C No Prior Device Conduction Gate Control Guaranteed 1 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles 100

01

10 Consecutive 50 Hz Half-Sine-Wave Cycles

100

Figure 3.

Figure 4.

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TIC116 SERIES SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED JUNE 2000

TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT vs CASE TEMPERATURE
TC03AA

GATE TRIGGER VOLTAGE vs CASE TEMPERATURE

1
TC03AB

VAA =12 V IGT - Gate Trigger Current - mA tp(g) 20 s 10 VGT - Gate Trigger Voltage - V RL = 100 08

06

04 VAA =12 V 02 RL = 100 tp(g) 20 s

1 -50

-25

25

50

75

100

125

0 -50

-25

25

50

75

100

125

TC - Case Temperature - C

TC - Case Temperature - C

Figure 5. HOLDING CURRENT vs CASE TEMPERATURE

100
TC03AD

Figure 6.

PEAK ON-STATE VOLTAGE vs PEAK ON-STATE CURRENT

25 TC = 25 C tP = 300 s 2 Duty Cycle 2 %
TC03AE

VTM - Peak On-State Voltage - V 125

VAA = 12 V Initiating IT = 100 mA IH - Holding Current - mA

15

10

05

1 -50

-25

25

50

75

100

0 01

10

100

TC - Case Temperature - C

ITM - Peak On-State Current - A

Figure 7.

Figure 8.

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TIC116 SERIES SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED JUNE 2000

MECHANICAL DATA TO-220 3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO-220 4,70 4,20

3,96 3,71

10,4 10,0

2,95 2,54 6,6 6,0 15,32 14,55

1,32 1,23

18,0 TYP.

6,1 5,6

0,97 0,66 1 2 3

1,47 1,07

14,1 12,7

2,74 2,34 5,28 4,68 2,90 2,40

0,64 0,41

ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab.

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TIC116 SERIES SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED JUNE 2000

IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright 2000, Power Innovations Limited

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