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IRF7303QPbF
HEXFET Power MOSFET
8 7
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dual N Channel MOSFET Surface Mount Available in Tape & Reel 150C Operating Temperature Lead-Free
S1 G1 S2 G2
1 2
D1 D1 D2 D2
3 4
6 5
Top View
Description
These HEXFET Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
SO-8
Max.
5.3 4.9 3.9 20 2.0 0.016 20 5.0 -55 to + 150
Units
A W W/C V V/ns C
Typ.
Max.
62.5
Units
C/W
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1
08/02/10
IRF7303QPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(ON) VGS(th) g fs IDSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 1.0 5.2 Typ. 0.032 6.8 21 22 7.7 4.0 6.0 520 180 72 Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.050 VGS = 10V, ID = 2.4A 0.080 VGS = 4.5V, ID = 2.0A V VDS = VGS, ID = 250A S VDS = 15V, ID = 2.4A 1.0 VDS = 24V, VGS = 0V A 25 VDS = 24V, V GS = 0V, TJ = 125 C 100 VGS = 20V nA -100 VGS = - 20V 25 ID = 2.4A 2.9 nC VDS = 24V 7.9 VGS = 10V, See Fig. 6 and 12 VDD = 15V ID = 2.4A ns RG = 6.0 RD = 6.2, See Fig. 10 nH pF
D
Between lead tip and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5
G S
V SD t rr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Conditions D MOSFET symbol 2.5 showing the A G integral reverse 20 p-n junction diode. S 1.0 V TJ = 25C, IS = 1.8A, V GS = 0V 47 71 ns TJ = 25C, IF = 2.4A 56 84 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
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IRF7303QPbF
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
10
4.5V
10
1 0.1
100
1 0.1
100
2.0
TJ = 25C TJ = 150C
I D = 4.0A
1.5
1.0
0.5
10 4 5 6 7
VGS = 10V
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IRF7303QPbF
1000
800
Ciss
600
Coss
400
20
16
C, Capacitance (pF)
12
200
Crss
0 1 10 100
0 0 5 10
100
100
10
TJ = 150C
100us 10
TJ = 25C
1ms
VGS = 0V
2.0
2.5
1 0.1
10ms 100
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IRF7303QPbF
5.0
V DS
4.0
RD
VGS RG
D.U.T.
+
- VDD
3.0
10V
Pulse Width 1 s Duty Factor 0.1 %
2.0
VDS 90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100
0.1 0.0001
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IRF7303QPbF
Current Regulator Same Type as D.U.T.
QG
10V
QGS VG QGD
D.U.T. VGS
3mA
+ V - DS
Charge
IG
ID
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IRF7303QPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer
RG dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS
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IRF7303QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
5 H 0.25 [.010] A
c D E e e1 H
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 B ASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
K L y
e1
K x 45 C 0.10 [.004] y 8X c
8X b 0.25 [.010]
A1 C A B
8X L 7
NOT ES : 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENSION IS T HE LENGTH OF LEAD F OR S OLDERING T O A S UBST RATE. 3X 1.27 [.050] 6.46 [.255]
8X 1.78 [.070]
XXXX F 7101
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IRF7303QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2010
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