BC807-16LT1G, BC807-25LT1G, BC807-40LT1G General Purpose Transistors

PNP Silicon
Features

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COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value 45 50 5.0 500 Unit V V V mAdc 1 2 SOT23 CASE 318 STYLE 6 3

These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, JunctiontoAmbient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, JunctiontoAmbient Junction and Storage Temperature Symbol PD Max 225 1.8 556 Unit mW mW/C C/W

MARKING DIAGRAM

RqJA PD

300 2.4 417 55 to +150

mW mW/C C/W C

5xx M G G 1 5xx = Device Code xx = A1, B1, or C M = Date Code* G = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.

RqJA TJ, Tstg

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2010

October, 2010 Rev. 9

Publication Order Number: BC80716LT1/D

BC80716LT1G, BC80725LT1G, BC80740LT1G

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)
Characteristic OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (IC = 10 mA) Collector Emitter Breakdown Voltage (VEB = 0, IC = 10 mA) Emitter Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TJ = 150C) ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 1.0 V) Collector Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) Base Emitter On Voltage (IC = 500 mA, IB = 1.0 V) SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) fT Cobo 100 10 MHz pF VCE(sat) VBE(on) BC80716 BC80725 BC80740 hFE 100 160 250 40 250 400 600 0.7 1.2 V V V(BR)CEO V(BR)CES V(BR)EBO ICBO 45 50 5.0 V V V Symbol Min Typ Max Unit

100 5.0

nA mA

ORDERING INFORMATION
Device BC80716LT1G BC80716LT3G BC80725LT1G BC80725LT3G BC80740LT1G BC80740LT3G 5C 5B1 5A1 Specific Marking Package SOT23 (PbFree) SOT23 (PbFree) SOT23 (PbFree) SOT23 (PbFree) SOT23 (PbFree) SOT23 (PbFree) Shipping 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

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BC80716LT1G, BC80725LT1G, BC80740LT1G

TYPICAL CHARACTERISTICS BC80716LT1
500 400 300 25C 200 55C 100 0 150C VCE(sat), COLLECTOREMITTER SATURATION VOLTAGE (V) VCE = 1 V hFE, DC CURRENT GAIN 1 IC/IB = 10

150C 25C 0.1 55C

0.001

0.01

0.1

0.01

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

Figure 1. DC Current Gain vs. Collector Current

VBE(on), BASEEMITTER VOLTAGE (V) 1.1 VBE(sat), BASEEMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 150C IC/IB = 10 55C 25C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2

Figure 2. Collector Emitter Saturation Voltage vs. Collector Current

VCE = 5 V 55C 25C

150C

0.0001

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

Figure 3. Base Emitter Saturation Voltage vs. Collector Current

Figure 4. Base Emitter Voltage vs. Collector Current

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BC80716LT1G, BC80725LT1G, BC80740LT1G

TYPICAL CHARACTERISTICS BC80716LT1
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 TJ = 25C -0.8 IC = -500 mA

-0.6

-0.4 IC = -300 mA -0.2 IC = -10 mA 0 -0.01 -0.1 IC = -100 mA

-1.0 -10 IB, BASE CURRENT (mA)

-100

Figure 5. Saturation Region

V, TEMPERATURE COEFFICIENTS (mV/C)

+1.0 qVC for VCE(sat) 0

100

C, CAPACITANCE (pF)

Cib 10

-1.0

-2.0

qVB for VBE

Cob

-1.0

-10 -100 IC, COLLECTOR CURRENT

-1000

1.0 -0.1

-1.0 -10 VR, REVERSE VOLTAGE (VOLTS)

-100

Figure 6. Temperature Coefficients

Figure 7. Capacitances

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BC80716LT1G, BC80725LT1G, BC80740LT1G

TYPICAL CHARACTERISTICS BC80725LT1
500 400 300 200 55C 100 0 25C VCE(sat), COLLECTOREMITTER SATURATION VOLTAGE (V) 150C hFE, DC CURRENT GAIN VCE = 1 V 1 IC/IB = 10

150C 25C 0.1 55C

0.001

0.01

0.1

0.01

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

Figure 8. DC Current Gain vs. Collector Current

VBE(on), BASEEMITTER VOLTAGE (V) 1.1 VBE(sat), BASEEMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 150C IC/IB = 10 55C 25C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2

Figure 9. Collector Emitter Saturation Voltage vs. Collector Current

VCE = 5 V 55C 25C

150C

0.0001

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

Figure 10. Base Emitter Saturation Voltage vs. Collector Current

1000 fT, CURRENTGAINBANDWIDTH PRODUCT (MHz) VCE = 1 V TA = 25C

Figure 11. Base Emitter Voltage vs. Collector Current

100

10

0.1

10

100

1000

IC, COLLECTOR CURRENT (A)

Figure 12. Current Gain Bandwidth Product vs. Collector Current

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BC80716LT1G, BC80725LT1G, BC80740LT1G

TYPICAL CHARACTERISTICS BC80725LT1
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 TJ = 25C -0.8 IC = -500 mA

-0.6

-0.4 IC = -300 mA -0.2 IC = -10 mA 0 -0.01 -0.1 IC = -100 mA

-1.0 -10 IB, BASE CURRENT (mA)

-100

Figure 13. Saturation Region

V, TEMPERATURE COEFFICIENTS (mV/C)

+1.0 qVC for VCE(sat) 0

100

C, CAPACITANCE (pF)

Cib 10

-1.0

-2.0

qVB for VBE

Cob

-1.0

-10 -100 IC, COLLECTOR CURRENT

-1000

1.0 -0.1

-1.0 -10 VR, REVERSE VOLTAGE (VOLTS)

-100

Figure 14. Temperature Coefficients

Figure 15. Capacitances

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BC80716LT1G, BC80725LT1G, BC80740LT1G

TYPICAL CHARACTERISTICS BC80740LT1
1000 800 700 600 500 400 300 200 100 0 0.001 0.01 0.1 1 55C 25C 150C VCE(sat), COLLECTOREMITTER SATURATION VOLTAGE (V) 900 hFE, DC CURRENT GAIN VCE = 1 V 1 IC/IB = 10

150C 25C 0.1 55C

0.01

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

Figure 16. DC Current Gain vs. Collector Current

VBE(on), BASEEMITTER VOLTAGE (V) 1.1 VBE(sat), BASEEMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 150C IC/IB = 10 55C 25C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2

Figure 17. Collector Emitter Saturation Voltage vs. Collector Current

VCE = 5 V 55C 25C

150C

0.0001

0.001

0.01

0.1

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

Figure 18. Base Emitter Saturation Voltage vs. Collector Current

1000 fT, CURRENTGAINBANDWIDTH PRODUCT (MHz) VCE = 1 V TA = 25C

Figure 19. Base Emitter Voltage vs. Collector Current

100

10

0.1

10

100

1000

IC, COLLECTOR CURRENT (A)

Figure 20. Current Gain Bandwidth Product vs. Collector Current

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BC80716LT1G, BC80725LT1G, BC80740LT1G

TYPICAL CHARACTERISTICS BC80740LT1
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 TJ = 25C -0.8 IC = -500 mA

-0.6

-0.4 IC = -300 mA -0.2 IC = -10 mA 0 -0.01 -0.1 IC = -100 mA

-1.0 -10 IB, BASE CURRENT (mA)

-100

Figure 21. Saturation Region

V, TEMPERATURE COEFFICIENTS (mV/C)

+1.0 qVC for VCE(sat) 0

100

C, CAPACITANCE (pF)

Cib 10

-1.0

-2.0

qVB for VBE

Cob

-1.0

-10 -100 IC, COLLECTOR CURRENT

-1000

1.0 -0.1

-1.0 -10 VR, REVERSE VOLTAGE (VOLTS)

-100

Figure 22. Temperature Coefficients

Figure 23. Capacitances

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BC80716LT1G, BC80725LT1G, BC80740LT1G

TYPICAL CHARACTERISTICS BC80716LT1, BC80725LT1, BC80740LT1
1 IC, COLLECTOR CURRENT (A) 1S 100 mS 0.1 10 mS 1 mS

Thermal Limit 0.01

0.001

0.1

10

100

VCE, COLLECTOR EMITTER VOLTAGE (V)

Figure 24. Safe Operating Area

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BC80716LT1G, BC80725LT1G, BC80740LT1G

PACKAGE DIMENSIONS
SOT23 (TO236) CASE 31808 ISSUE AN
D
SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 31801 THRU 07 AND 09 OBSOLETE, NEW STANDARD 31808. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094

E
1 2

HE

b q

0.25

A A1 L L1 VIEW C

DIM A A1 b c D E e L L1 HE

MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10

MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083

MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104

STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR

SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037

2.0 0.079 0.9 0.035 0.8 0.031

SCALE 10:1 mm inches

*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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BC80716LT1/D