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Somayyeh Koohi
Department of Computer Engineering Sharif University of Technology
Adapted with modifications from lecture notes prepared by author
Topics
Design rules and fabrication SCMOS scalable design rules Stick diagrams
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Manufacturing problems
Photoresist shrinkage tearing Variations in material mask Variations in temperature Variations i oxide thi k V i ti in id thickness
Variation in Vt
Transistor problems
Variations in threshold voltage:
oxide thickness ion implantation poly variations
Variations in substrate
Sharif University of Technology Modern VLSI Design: Chap2 5 of 31
Wiring problems
Diffusion:
Changes in doping variations in resistance, capacitance variations in resistance,
Poly, metal:
Variations in height, width capacitance
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Oxide problems
Variations in height Lack of planarity step coverage
metal 2 metal 2 metal 1
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Via problems
Via may not be cut all the way through Undersize via has too much resistance Via may be too large and create short
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Topics
Design rules and fabrication SCMOS scalable design rules Stick diagrams
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Scaling
Scale all chip parameters by x:
W -> W/x, L -> L/x, V -> V/x, etc.
More later
Sharif University of Technology Modern VLSI Design: Chap2 12 of 31
Wires
6 3 3 3 2 metal 3 metal 2 metal 1 pdiff/ndiff poly
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Transistors
2 3 2 3 1 5
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Vias
Types of via:
metal1/diff metal1/poly metal1/metal2
4 1 2 4
Metal 3 via
Type: metal3/metal2 Rules:
cut: 3 x 3 overlap by metal2: 1 minimum spacing: 3 minimum spacing to via1: 2
5 1 3
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Tub tie
Tub to power supply
4 1
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Spacings
Diffusion/diffusion: 3 Poly/poly: 2 Poly/diffusion: 1 y Via/via: 2 Metal1/metal1: 3 Metal2/metal2: 4 Metal3/metal3: 4 Diffusion/tub wall: 5
Sharif University of Technology Modern VLSI Design: Chap2 18 of 31
Topics
Design rules and fabrication SCMOS scalable design rules Stick diagrams
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Stick diagrams
Is a cartoon of a layout Shows
All components/vias (except possibly tub ties) Relative placement
Not show
Exact placement Transistor sizes Wire lengths Wire widths Tub boundaries
Sharif University of Technology Modern VLSI Design: Chap2 20 of 31
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m1
O Short O O O
poly
O O Short O O
ndiff
O O NMOS Short O
pdiff
O O PMOS illegal Short
Stick layers
metal 3 metal 2 metal 1 poly ndiff pdiff
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in
out
VSS
phi
phi
Modern VLSI Design: Chap2 24 of 31
out b a
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NAND sticks
VDD a out
VSS
Sharif University of Technology Modern VLSI Design: Chap2 26 of 31
N1 (NAND)
b
N1 (NAND)
b
select
N1 (NAND)
b
VSS
Sharif University of Technology Modern VLSI Design: Chap2 27 of 31
m2(one-bit-mux)
o2
a1 b1 a0 b0
ai bi ai bi
select
select
m2(one-bit-mux)
select select
o1
m2(one-bit-mux)
o0
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Circuit extractors extract the netlist from the layout Connectivity verification systems (CVS) compare
extracted and original netlists
Sharif University of Technology Modern VLSI Design: Chap2 29 of 31
Automatic layout
Cell generators (macrocell generators) create optimized layouts for ALUs, etc. Standard cell/sea-of-gates layout creates layout cell/sea of gates from pre-designed cells + custom routing
Sea-of-gates allows routing over the cell
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routing area
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