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Scattering Matrix Characterization of Microwave Components

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Vi+ is voltage of incident wave; i = 1, 2,3....n

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Vi is voltage of reflected wave;

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Scattering Matrix of an N Port Network

Shift in Reference Planes

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Properties Scattering Matrix of an N Port Network

Symmetry Property

For a reciprocal network : V1 V2 ... VN V1 S11 S12 .........S1N V1 + S S .........S + V 21 22 2N V2 = & 2 ... ........................ ... + + VN SN1 SN 2 .......SNN VN
+ +

this is only possible if :

S'11 S'12 .........S'1N S11 S12 .........S1N T ' ' ' S 21 S 22 .........S 2N S21 S22 .........S2N T = = [S] or S' ........................ ........................ ' ' ' SN1 SN 2 .......SNN S N1 S N 2 .......S NN This condition itself means that [S] is a symmetric matrix.

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S'11 S'12 .........S'1N V1 ' ' ' S 21 S 22 .........S 2N V2 ........................ ... ' ' ' S N1 S N 2 .......S NN VN

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Unity Property: For a row or column of a scattering matrix(in a lossless junction), the summation of product of elements with their respective conjugates is equal to unity

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Zero Property: In a lossless junction, the summation of product of elements of one row/column with complex conjugate of corresponding elements of another row/column of a scattering matrix is zero.

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The product of transpose and complex conjugate of a scattering matrix is a unity matrix.

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Unitary Property:

Microwave Junction/Network Components

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Scattering Matrix Characterization of Microwave Components

E-Plane Tee :

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Similar to that of E plane tee except that

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H-Plane Tee :

Magic Tee :

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Hybrid Ring:

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Two Hole Directional Coupler:

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Directional Coupler:

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Circulator:

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For an Ideal Isolator:

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0 S= S 21

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Isolator:

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Circulator made up of two magic tees

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Corners , Bends & Twists:

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C op yr ig ht ed M at er ia l-P

, above,

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Microwave Active Devices

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Negative Resistance Region

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Doping of both P & N regions are very high resulting in a thin barrier potential. It is so suggested from quantum mechanical theory or Schrdinger's equations that a barrier potential of less than 3 A0 can result in a transition across the junction despite the fact that the electrons /holes are not energized enough to break the potential barrier. This phenomenon of current across the junction is called tunneling and the diode is thus called tunnel diode.

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Tunnel Diode

Equivalent Circuit

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A potential difference is applied so that the majority carriers move from source to the drain and a reverse potential to the majority carriers is applied at the gate so as to make a depletion region and create pinch off.

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MESFET (Metal Semiconductor Field Effect Transistor)

Here:

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Integrating the above equation twice and application of boundary conditions yield the pinch-off voltage as

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Drain Current

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Negative Conductance

Gunn diode also show negative resistance after a threshold voltage, this property makes it a good microwave source.

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Eg=1.4eV Forbidden Band Valence Band

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Gunn Diode (TED)

Conductivity

Where

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p is the field exponent and must be negative and large

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Frequency of oscillations is given by:

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( efficiency 10%)

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When transit time is so chosen that the domain is collected but E< Eth then new domain cant be formed until the field rises again above threshold consequently oscillation period is grater than the transit time. This mode is also called inhibited mode( efficiency 20%)

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With respect to different drift velocities following modes exist:

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Modes of Operation

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In this mode due to high frequency of operation domains do not have enough time to get formed therefore a limited space charge gets accumulated uniformly. The internal electric field becomes uniform and proportional to the applied voltage and current becomes proportional to drift velocity at the field level. ( efficiency 20%)

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When the field drops below the sustained field Es during the negative half cycle then the domain collapses and wont reach anode then as the positive cycle comes the field swings back above threshold nucleating another domain, and the process repeats thereby creating oscillations at resonant frequency rather than that of transit time. ( efficiency 13%)

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Transit Time Angle

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Avalanche Resonant Frequency

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Three types of IMPATT Diodes

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Maximum Voltage & Current

Power Frequency Limitation

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In Amplitude Modulation the carrier is generated from a local oscillator and the carrier is the modulated by the modulating signal in a non linear element such as mixer. In a Parametric Amplifier the non-linear device is replaced by a varying capacitor/inductor such as varactor diode and the oscillator is replaced by a pumping generator such as reflex klystron. The output circuit does not require an external excitation and is thus called idler circuit.

( fs / f0 for down converter )

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Reverse bias equivalent circuit

Forward bias equivalent circuit

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PIN Diode

Applications of PIN diode Attenuator:

Switch:

Since the intrinsic forward resistance Ri is inversely proportional to the bias current, the modulating signal is used to change/vary this resistance thereby producing a Continuous Amplitude-Modulated RF wave.

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Phase Shifter:

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The pin diode has a VI characteristics which make it a good RF switch. When reverse biased a small series junction capacitance leads to high diode impedance while forward bias removes the junction capacitance to make a low impedance state

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The crystal diodes have the distinction of being the first ever semiconductor device produced. Primarily developed by the Indian scientist Sir Jagadish Chandra Bose the crystal diode forms a metal semiconductor junction which was later coined as Schottky barrier junction (named after Schottky). Here a thin metal wire loosely touches a semiconducting crystal( usually galena) to make an excellent microwave demodulator or envelope detector. The largest differences between a Schottky barrier and a pn junction are its typically lower junction voltage, and decreased (almost nonexistent) depletion width in the metal

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Crystal Diodes:

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Microwave Filters Analysis & Design

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Transmission lines and waveguides when loaded or connected with reactive elements at spatial periodic gaps are known as periodic structures. Periodic structures support slow wave propagation and are also called slow wave structures. Moreover, their frequency domain characteristics match with those of filters and make them ideal candidates for filter implementations. The also find application in TWTs, MASERs, Antennas, Phase Shifters etc.

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Periodic Structures:

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Low Pass Consideration

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High Pass Consideration

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Low Pass Consideration

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Ladder Circuits for Filter Design

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Lumped Distributed

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Using Richards Transforms

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Now series stubs will be impractical to be implemented over usual transmission line like microstrip. Therefore Kurodas identities are used to convert these series stubs to shunt. This is done by first introducing redundant unit elements in to the circuit.

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