2N720A

HIGH VOLTAGE GENERAL PURPOSE

DESCRIPTION The 2N720A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications.

TO-18

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTEMAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC Pt o t T st g, T j October 1988 Parameter Collector-base Voltage (I E = 0) Collectoremitter Voltage (I R = 0) Emitterbase Voltage (I C = 0) Collector Current Total Power Dissipation at T amb 25 C at T cas e 25 C Storage and Junction Temperature Value 120 80 7 500 0.5 1.8 65 to 200 Unit V V V mA W W C 1/4

2N720A
THERMAL DATA
R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 97.2 350 C/W C/W

ELECTRICAL CHARACTERISTICS(T a mb = 25 C unless otherwise specified)

Symbol I CBO V (B R)CBO Parameter Collector Cutoff Current (I E = 0) Collectorbase Breakdown Voltage (I E = 0) Collectoremitter Breakdown Voltage (I B = 0) Emitterbase Breakdown Voltage (I E = 0) Emitter Cuttoff Current (I E = 0) Collectoremitter Saturation Voltage Baseemitter Saturation Voltage DC Current Gain Test Conditions V CB = 90 V I C = 100 A 120 Min. Typ. Max. 10 Unit nA V

V (BR)CE O *

I C = 30 mA

80

V (B R)E BO

I E = 100 A

I E BO V CE( sat )* V BE( sat )* h F E*

VE B = 5 V I C = 50 mA I C = 150 mA I C = 50 mA I C = 150 mA I C = 100 A I C = 10 mA I C = 150 mA I C = 50 mA f = 20 MHz IE = 0 f = 1 MHz IC = 0 f = 1 MHz I B = 5 mA I B = 15 mA I B = 5 mA I B = 15 mA V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CB = 10 V V EB = 0.5 V 20 35 40 2.5

10 1.2 5 0.9 1.3

nA V V V V

120

hfe C CBO C EBO

High Frequency Current Gain Collectorbase Capacitance Emitterbase Capacitance

15 85

pF pF

* Pulsed : pulse duration = 300 s, duty cycle = 1 %.

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2N720A

TO-18 MECHANICAL DATA

mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch

D G I H E F

L C B

0016043

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2N720A

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A

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