linear amps

Common base amplifier linearization using augmentation

Improve the linearity and power efficiency of common-base transistors for HF and VHF amplifiers with the application of augmentation.
Chris Trask
tween the input and output voltages that, for VHF (very high frequency) devices, can approach zero degrees. Using power transistors with these characteristics in feedback topologies can create expensive power oscillators. Another approach to power amplifier linearization is the use of feedforward, in which a sample of the output of the amplifier is compared with the input, and the difference is then amplified and summed with the output in the proper amplitude and phase relationship. This will result in a partial, if not complete, cancellation of the output distortion products. Feedforward amplifiers are generally limited to narrowband applications and, as such, can be expensive to manufacture. where RE is a fixed resistance, rbb is the base spreading resistance, and re is the nonlinear emitter resistance, which is approximately described as: vbe re = qVbe I0 T (4) The base-emitter voltage VBE is further described by: VBE = vBE + vbe (5) where vBE is the quiescent bias voltage and v be is the time-varying signal voltage. In general the third term of (3) is relatively insignificant, and the input resistance of the common-base amplifier is therefore seen as the series combination of a fixed linear resistor and the nonlinear emitter resistance, the latter of which is the principal source of distortion in common-base amplifiers [5]. The presence of this nonlinear emitter resistance gives rise to a nonlinear voltage at the emitter: re ve = VS RE + re (6) From (6) it can be seen that the nonlinear emitter voltage ve can be reduced by either making the fixed emitter input resistance RE larger [5] or by reducing the nonlinear emitter resistance re, which can be accomplished by increasing the quiescent bias current. The former method is undesirable, especially for power amplifiers because it requires that the input signal voltage be proportionally larger for a given desired output voltage, and the latter method renders the amplifier less
T1

inear power amplifiers, even those at moderate power levels, are the primary element in determining the efficiency of transmitter systems. In portable communications equipment, the ability of the transmitter power stages to provide a linear signal to the antenna (while at the same time conserving power consumption) can be a particularly challenging design problem. This article presets a technique that shows how the characteristics of wide bandwidth, high linearity, and power efficiency are readily attained.

Basic premise
Bipolar transistors have two basic sources of nonlinearity: the baseemitter junction proper and the nonlinear bulk resistance of the collector region [1]. Overcoming these sources of harmonic and intermodulation (IM) distortion pose serious problems for designers of both small- and large-signal amplifiers. In the design of small-signal amplifiers, the designer has several design topologies at his disposal for linearizing amplifier stages, including dual-loop feedback [2], series-shunt feedback [3], and lossless feedback [4]. The power amplifiers, however, are a different matter. In the design of power amplifiers, the usage of feedback topologies is limited by virtue of a number of obstacles: one of which is the phase relationship beRE Q1

Common-base amplifiers
Common-base amplifiers offer some interesting properties that deserve consideration. Figure 1 illustrates a basic common-base amplifier., where the output voltage VO is determined by: Vo = Ic RL (1) where IC is the collector current and is a result of the input emitter current IE: IE hfe hfe + 1 (2) the emitter current being the result of the input voltage VS and the input resistance Ri: Ic = Ri = R E + re + rbb hfe + 1
Q1

(3)

RE

RE VS RL VS 1 N T1 RL VS M 1 T1 N RL

Figure 1. Basic common-base amplifier.

Figure 2. Simple passive augmentation.

Figure 3. Compound passive augmentation.

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Figure 4. Uncompensated common-base amplifier.

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vbe Av + 1 re = qVbe I0 T (7) that obviously shows that as the voltage gain of the amplifier is increased, the apparent emitter resistance decreases, and this process will be referred to as augmentation [6]. Both active and passive implementations of common-base amplifier augmentation are possible, but the discussion here will focus on two passive realizations because they are the most practical application of the method with regard to power amplifiers.

ve N N+1 1 ie hfe (11) that results in a substantial reduction in the input emitter resistance, as much as 95% for a transformer turns ratio of 1:3.

Output Power (dBm)

Gain (dB)

Compound passive augmentation

The second method of passive augmentation is compound, illustrated in Figure 3, in which the emitter of the amplifying transistor is connected to a tap on the primary winding of the augmentation transformer, now having a turns ratio of 1:M:N, thereby providing current gain. This method is particularly useful where low collector supply voltages preclude the use of highoutput transformer ratios, or where it is desired that cascaded amplifier stages be direct-coupled. The baseemitter signal voltage remains as with (7), but the input voltage now becomes: (12) while the input current becomes: ie M +1 (13) that makes the apparent input impedance for the compound augmented amplifier become: ie " = re " = and: re (M + 1)
2

Simple passive augmentation

The first method of passive augmentation is simple, in which the emitter error voltage is amplified and inverted by means of a simple two-winding transformer having a primary to secondary turns ratio of N. Figure 2 illustrates this circuit, where the primary of transformer T1 is connected from the emitter to ground, and the secondary is connected in reverse phase from the base to ground. The input signal current is now: ie = ie N ib which equals: N ie hfe and: ie N ie 1 hfe (8) further, the base-emitter signal voltage is: vbe = vb ve which equals: N ve ve which equals: (9) and results in an apparent emitter input voltage of: vbe ve = N +1 (10) and that in turn results in an approximate expression for the apparent emitter input resistance: re = and: ve ie ve (N + 1)

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Figure 5. Common-base amplifier with 1:2 simple augmentation.

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Figure 6. Common-base amplifier with 1:1:2 compound augmentation.

Gain (dB)

ve " = ve (M + 1)

ve " ie "

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and: 2 ve (M + 1) N N+1 1 ie hfe

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Figure 7. Gain comparisons.

(14) which is to be expected, since the primary winding of the augmentation transformer now functions as an autotransformer.

power-efficient. Clearly, an alternative method for reducing the nonlinear emitter resistance would be desirable.

Experimental results
To illustrate the effectiveness of this linearization method, three amplifiers were constructed and evaluated, using a common 2N2222 as the active device. A 2:1 wideband transformer was used in the collector to give the amplifier an initial theoretical power gain of 6.0 dB. A 47- resistor was used for RE to provide a good input impedance match. Bias conditions were set at a VCE of 10 V and IC of 10 mA, for a collector power dissipation of 100 mW. A signal fre-

Introduction to augmentation
One method for reducing this resistance is to detect the emitter signal voltage, amplify and invert it, and then apply it to the transistor base. In doing so, the base-emitter signal voltage vbe remains essentially the same, but the emitter signal voltage v e is now reduced, resulting in the apparent emitter resistance re:

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Configuration Uncompensated 1:2 Simple Augmentation 1:1:2 Compound Augmentation

Table 1.

Gain 4.75 dB 5.40 dB 11.3 dB

P1dB -2.75 dBm 12.25 dBm +11.5 dBm

IP3 +12.5 dBm +29.5 dBm +28 dBm

PSAT +3. dBm +17 dBm +17 dBm

Conclusions
The application of augmentation has been shown to be an effective means of improving the linearity and power efficiency of common-base transistor amplifiers, and this technique has been applied successfully in the design of HF and VHF power amplifiers. Collector efficiencies exceeding 90% and IP3 improvements of more than 15 dB are readily achieved without the need for additional active components or the use of costly topologies such as feedforward. References 1. Trask, C., Nonlinear Distortion in Bipolar Transistors, QEX, Nov/Dec 1998, pp. 37-42. 2. Aprille, T.J., Wide-Band Matched Amplifier Design Using Dual Loop Feedback and Two Common Emitter Transistor Stages, IEEE Transactions on Circuits and Systems, vol. CAS-23, No. 7, Jul 1976, pp. 434-442. 3. Seader, L.D. and J.E. Stertett, Unit Transistor Amplifier with Matched Input and Output Impedances, US Patent 3,493,882, 3 Feb 1970. 4. Norton, D.E. and A.F. Podell, Transistor Amplifier with Impedance Matching Transformer, US Patent 3,891.934, 24 June 1975. 5. Shea, Richard F., Principles of Transistor Circuits, Wiley, 1953, pp. 136-141. 6. Patent pending. 7. Trask, C., Distortion Improvement of Lossless Feedback Amplifiers Using Augmentation, 1999 Midwest Symposium on Circuits and Systems, Las Cruces, NM, 11 Aug 1999.

quency of 10 MHz was used for gain and compression tests, while signals of 9.9 MHz and 10.1 MHz were used for intermodulation tests. Initial tests were performed on an uncompensated common-base amplifier (Figure 1) to establish a baseline for performance. The results, shown graphically in Figure 4, show that this amplifier has a gain of 4.75 dB, a 1 dB c o m p r e s s i o n p o i n t ( P 1dB) o f -2.75 dBm, and an approximate thirdorder intercept point (IP 3 ) of +12.5 dBm. Saturable power (P SAT) is just barely +3 dBm. Next, a common-base amplifier with 1:2 simple augmentation (Figure 2) was evaluated, using the same bias conditions as before. Referring now to Figure 5, we see that the performance has improved dramatically: The P1dB compression point has risen to +12.25 dBm, IP3 is +29.5 dBm, and PSAT has now risen to over +17 dBm. This latter figure indicates that the process of augmentation has rendered an amplifier with higher than 95% peak power efficiency. Power gain has risen to 5.4 dB, appreciably closer to the theoretical 6 dB design gain. Notice also that the gain remains fairly constant, having a much sharper compression characteristic than the earlier uncompensated amplifier. Finally, a common-base amplifier with 1:1:2 compound augmentation (Figure 3) was evaluated, again using the same bias conditions as with the two prior amplifiers. The additional current gain provided by the autotransformer effect of the augmentation transformer primary gives the amplifier a theoretical power gain of +12 dB. Referring now to Figure 6, we see that the performance of the compound augmented amplifier is similar to that of the previous simple augmented amplifier: The P1dB compression point is now +11.5 dBm, IP3 is +28 dBm, and PSAT is still over +17 dBm, indicating that the process of compound augmentation has also rendered an amplifier with higher

than 95% peak power efficiency. The measured power gain of 11.3 dB is again comparable to the design gain for this amplifier and also displays the fairly constant gain characteristics of the previous common-base amplifier with simple augmentation. Table 1 gives a tabulated comparison of the performance parameters mentioned here, while Figure 7 graphically compares the gain characteristics of the three example circuits, which helps to illustrate the dramatic improvement in the gain between the uncompensated common-base amplifier and the common-base amplifier with simple augmentation.

Applications and refinements

The technique of augmentation has been applied to a number of HF and VHF power amplifier designs, and the success of the approach has prompted a patent application for the the passive implementations shown here as well as active implementations. The technique has also been applied in the linearization of small-signal lossless feedback amplifiers [5, 7] with comparable results. A similar method has been introduced recently in the design of cascade amplifiers [8]. Although the use of passive augmentation has been found to offer some degree of improved stability, augmented amplifiers require that the same attention be given to the stability of the active device as would be done for a common-base amplifier, where the series inductance of the base becomes a critical element [9]. For the design of augmented amplifiers at high frequencies, the operating bias point plays an essential role in the cutoff frequency, just as it does in the design of common-base amplifiers. Improper choice of the operating point can reduce the high-frequency performance, and careful choices may be necessary to ensure optimum performance [10].

About the author

Chris Trask is an independent designer of analog, RF and microwave circuitry and is the author of ALMOND, which is PC-compatible RF design software. He received his B.S.E.E. and M.S.E.E. degrees from Pennsylvania State University in 1973 and 1979, respectively, taking time in between to fly C-130 transports for the U.S. Air Force. He may be reached at P.O. Box 25240, Tempe, AZ 85285-5240 or by e-mail at ctrask@primenet.com.

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