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Epitaxial Planar Transistor(NPN) 2SD1624

Epitaxial Planar Transistor (NPN)
Features
 Low collector-to-emitter saturation voltage.  Fast switching speed.  Large current capacity and wide ASO.

SOT-89

Mechanical Data
Case: Terminals: Weight: SOT-89, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram

Maximum Ratings (T Ambient=25º unless noted otherwise) C
Symbol Description Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Base Current Rating 60 50 6 3 6 600 500 Collector Power Dissipation 1 Junction Temperature Storage Temperature Range 150 -55 to +150 Unit V V V A A mA mW W °C °C Note 1 Conditions

VCBO VCEO VEBO IC ICP IB PC PC* TJ TSTG

Note 1: *Package mounted on ceramic substrate (250mm2 X 0.8t)
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IC=100mA hFE(2) VCE(sat) VBE(sat) fT Cob ton tstg tf Switching Time Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn-on Time Storage Time Fall Time VCE=2V. Max. IB=100mA VCE=10V. IE=0 VEB=4V.C. f=1MHz nS Rev.94 150 25 70 650 35 1 1 200 280 400 0.19 0. IC=3A V V MHz pF - IC=2A. IB=100mA IC=2A.com Page 2 of 7 . IE=0.taitroncomponents.5 1. IC=50mA VCB=10V.Epitaxial Planar Transistor (NPN) 2SD1624 Electrical Characteristics (T Ambient=25º unless noted otherwise) C Symbol Description Min. Typ. Current Gain Suffix ‘B’ Suffix ‘C’ VCE=2V. Unit Conditions ICBO IEBO Collector Cut-off Current Emitter Cut-off Current Suffix ‘A’ 100 140 200 35 0.2 - µA µA VCB=40V. IC=0 hFE(1) D. A/CH www.

Epitaxial Planar Transistor (NPN) 2SD1624 Typical Characteristics Curves Fig.com Page 3 of 7 . Collector Emitter Voltage Collector Current (A) Collector Current (A) Collector-Emitter Voltage (V) Base-Emitter Voltage (V) Fig.3.4.2-Collector Current vs. Collector Emitter Voltage Fig.DC Current Gain vs.1-Collector Current vs. Collector Current Collector Current (A) Collector-Emitter Voltage (V) DC Current Gain Collector Current (A) Rev.Collector Current vs. Collector Emitter Voltage Fig.taitroncomponents. A/CH www.

6. Collector Current Collector-Emitter Saturation Voltage (mV) Base-Emitter Saturation Voltage (V) Fig.Epitaxial Planar Transistor (NPN) 2SD1624 Fig.Collector-Emitter Saturation Voltage vs. A/CH www.7.Gain-Bandwidth Product vs. Collector Current Collector Current (A) Collector Current (A) Fig.Base-Emitter Saturation Voltage vs.Output Capacitance vs.5. Collector Current Collector Base Voltage (V) Gain-Bandwidth Product (MHz) Output Capacitance (pF) Collector Current (A) Rev.8.taitroncomponents.com Page 4 of 7 . Collector Base Voltage Fig.

Collector Emitter Voltage Collector Power Dissipation (W) Ambient Temperature Ta (° C) Collector Current (A) Collector Emitter Voltage (V) Rev.10.taitroncomponents.Collector Power Dissipation vs. Ambient Temperature Fig. A/CH www.com Page 5 of 7 .Collector Current vs.Epitaxial Planar Transistor (NPN) 2SD1624 Fig.9.

15 -0.1 0.5 G TYP 0.7 B ±0.com Page 6 of 7 .Epitaxial Planar Transistor (NPN) 2SD1624 Dimensions in mm SOT-89 PN 2SD1624 A MAX 4.1 -0.5 Rev.7 D +0.05 0.25 F ±0.75 K +0.taitroncomponents.45 E MAX 4.2 2.4 H MAX 1. A/CH www.1 1.5 C MAX 1.75 J MIN 0.

1160 WEST YAN’ AN ROAD.A .SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED.taitroncomponents. SALA 24 SAÚDE . 2777. HIDALGO C. SUITE 1503.taitroncomponents.com Http://www. SHANGHAI. VALENCIA. 2.com Page 7 of 7 .Epitaxial Planar Transistor (NPN) 2SD1624 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY.DE C.P. 200052.com TAITRON COMPONENTS MEXICO. CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA. SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA.ANDAR. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS. CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents. S.V. A/CH www.