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#7

Beta and Alpha

RL V cc

~
V be

vs Rs

RL V cc

vs Rs

RL V cc

vs Rs

Common base

Common emitter

Common collector

BJT configurations

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#7

Current Gain Mechanism in CE Configuration

Each extra hole attracts many electrons because they are passing through the base
Base

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#7

Common emitter short current gain

Electron diffusion current in the base In ~ Dn /(NabW) Ip ~ Dp /(NdeXb)

Dn N de X e o = D p N ab W
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#7

Diffusion equation for minority carriers in the base

d nb nb nbo Dn =0 2 nl dx
x x n = Aexp + Bexp Lnb Lnb
For W << Lnb

x n = A + B + ( A B ) Lnb
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#7

Diffusion equation again

x x x n = A + B + ( A B) + ( A + B) 2 + ( A B) 3 Lnb 2Lnb 6Lnb
2 3 xW x x x n = [nbe (0) nbo ]1 2 + 2 + 3 nbe (0) 2L 2 Lnb 6Lnb W nb

2 2Lnb R = W2

1 1 = + o R

Dp N abW W2 = + 2 Dn N de Xe 2Lnb

1
5

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#7

Common base current gain

Ic Ic Ine = = T Ie Ine Ie
Base transport factor
T = 1
SDM 2, Michael Shur 1999-2009

2L2 nb
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Example
Estimate o and R for the following parameter values, typical for Si BJTs: Nde =1019cm-3, Nab =2x1017cm-3, n = 900 cm2/Vs, p = 300 cm2/Vs, W = 0.1 m, Xe = 0.4 m, Lnb = 10 m.

SDM 2, Michael Shur 1999-2009

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Solution
o = 600, R = 20,000.

SDM 2, Michael Shur 1999-2009

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#7

I-V CharacteristicsCB Configuration

Ie Vee Re
E n B p n C

Ic Vcc

Ib Rc

Forward active mode: Collector current:

I c = I e + I cbo
CB current gain:

Ic Ie 1
SDM 2, Michael Shur 1999-2009

Saturation mode: Current drops off owing to opposing injected currents from the junctions
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#7

Graded Base Transistors

Modern BJTs have a nonuniform doping in the base, with the acceptor doping density decreasing towards the collector-base junction. (Such transistors are called "graded base" transistors.) The nonuniform doping leads to a non-uniform hole concentration along the base. Hence, the holes diffuse from the emitter side of the base toward the collector side of the base. This creates an excess positive charge at the collector side of the base and an excess negative charge at the emitter side of the base. This, in turn, leads to a built-in electric field, which pushes minority carriers (electrons) injected into the base toward the collector. As a consequence, the minority carriers take less time to traverse the base and their recombination is less effective.
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Alpha in graded base transistors

T = 1
SDM 2, Michael Shur 1999-2009

2 2 fLnb
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#7

Alpha and beta

Ic = Ie Ie = Ib and Ie = Ic + Ib Hence, Ie = Ie + Ib, Divide by Ie to obtain

= , = 1 1+

1= + 1/( +1)

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Base modulation

Weff = W Xbe X bc

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#7

Emitter current crowding

Base contact Emitter contact Base contact

n+ p n n+ Collector contact

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Realistic and idealized doping profiles

-3 10 10
19

10

21

..

Concentration (cm

17

10

15

n+ 0 0.8

p 1.6

n 2.4 3.2

Distance (m)
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Circuit diagram
Vcc

+
I c RL

Ib V ce

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I-V CharacteristicsCE Configuration

Ic
C

Ib
B

Rc Vcc Ie

Rb Vbb

Forward active mode: CE current gain:

I c = I b + I ceo = / (1 ) I c /I b >> 1
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Load line
Saturation Active forward

#7

600

Base current 1 A 2 A 3 A 4 A 5 A
-1.0

400

20 0

0 0 2.0 4.0 6.0

Cutoff

Collector-emitter voltage (V)

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I-V Characteristics (transistor NPN BCW82)

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AIM Spice simulation

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References

#7

I. GETREU , Modeling the Bipolar Transistor, Tektronix, Inc., part no. 0622841-00 (1970) K. LEE, M. SHUR, T. A. FJELDLY, AND T. YTTERDAL, Semiconductor Device Modeling for VLSI, Prentice Hall, Englewood Cliffs, NJ (1993) M. SHUR, Physics of Semiconductor Devices, Series in Solid State Physical Electronics, Prentice Hall, Englewood Cliffs, NJ (1990) S. M. SZE, Physics of Semiconductor Devices, Second Edition, John Wiley & Sons, New York (1981) S. M. SZE, Semiconductor Devices. Physics and Technology, John Wiley & Sons, New York (1985)
R. M. WARNER AND B. L. G RUNG , Transistors Fundamentals for the Integrated-Circuit Engineer, John Wiley & Sons, New York (1983)

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Bibliography
B. G. STREETMAN, Solid State Electronic Devices, Fifth Edition, Prentice Hall, Englewood Cliffs, NJ (1995) Concise and clear undergraduate text on semiconductor devices. G. W. NEUDECK, The Bipolar Junction Transistors, Addison Wesley Modular Series on Solid State Devices, Vol. III, Reading, MA (1983) Undergraduate text with many examples and problems. S. K. GHANDHI, VLSI Fabrication Principles, John Wiley & Sons, New York (1983) Detailed description of transistor fabrication technology. P. M. ASBECK, M. F. CHANG , K. C. WANG AND D. L. MILLER, "Heterojunction Bipolar Transistor Technology," in Introduction to Semiconductor Technology. GaAs and Related Compounds, Cheng T. Wang, Editor, John Wiley & Sons, New York (1990)
A good description of HBT technology and device characteristics.

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Summary

Electron concentrations at the boundaries n = n exp V / V be bo be th of emitter-base and collector-base nbc = nbo exp Vbc / Vth depletion region Quasineutrality condition in base p n << p Diffusion equation for electrons in the d 2 nb nb nbo Dn =0 base nl dx 2 dn Electron diffusion current in the base In = SqDn b

( (

) )

#7

V SqDn nbo exp be W Vth SqDp peo V Base current for the active forward mode Ib I pe exp be Xe Vth I e +I c +I b =0
Emitter and collector currents for the active forward mode

dx

Ie Ic In

Kirchoffs current law Minority (electron) carrier distribution in x xW x2 the base n = nbe (0) nbo 1 2 + 2 W 2Lnb 2Lnb 1 1 Overall maximum common- emitter Dp N abW 1 1 W2 current gain = + + 2 = o R Dn N de Xe 2Lnb = Ine / Ie Emitter injection efficiency Base transport factor Ine W2 T = =1 Inc 2 fLnb

Common-base current gain Effective base width Common emitter and common- base current gains BJT transconductance

SDM 2, Michael Shur 1999-2009

Ic I I = c ne T Ie Ine Ie Weff = W Xbe X bc = 1 I qI gm = c = c Vbe k B T

1+

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