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ABSTRACT
The project 'IR MUSIC TRANSMITTER AND RECEIVER' is designed to generate audio musical notes using UM66 and heard up to distance of 10 metres. The melody generated is transmitted through infra red and is reproduced at the remote place without any noise and disturbance.
CONTENTS
DATASHEETS
1. INTRODUCTION
The project k IR MUSIC TRANSMITTER AND RECEIVER' is designed to generate audio musical notes using UM66 and heard up to distance of 10 metres. The melod y generated is trans mitted through infra red and is reproduced at the re mote place without an y noise and disturbance.
2. BLOCK DIAGRAM
GENERATOR
AMPLIFIER
IR TRANSMITTER
BATTERY
TRANSMITTER
PI 10TO TRANSISTOR ]
PRE AMPLIFIER
AMI
RECEI VER
LS
Fiu.l
3. CIRCUIT DIAGRAM
9V
220MFBED 1K l Of-'
BCS4* 4 TK C1 3 3V
i____
1
1-______I
UMS 6
22K
TRANSMITTER
__________________ i
JJHJ
Ih
w
10K
7 > rlK
L#3M
10K<
PHOTS
npn
~\i
I
SUSSES
100K
RECEIVE!
L.
__________________________________ I
4. WORKING EXPLANATION
Transmitter
The trans mitter section consists of a melod y generatoe 1C UM66 to generate the lone. It will continuousl y generate musical tones. The output is fed to the IR driver stage built arround two transistors BC547 and BD140 to get more range.
The red led will flicker according to the mu sical tones. IR led will transmit the modulated mu sic as infrared beam.
Receiver
The IR musical receiver uses I ,M741 and I.IM386. The IR beam from the transmitter is hi Led on photo transistor 1.141!. The current How through the photo transistor will be according with the incident IR beam. Hence the pre amplifier will fed b y an analog signal corresponding to the trans mitted signal. After the pre amplification, the signal is fed to the audio a mplifier I.M386 via potentio meter. The melod y generated is
heard through the speaker. By var yin g the potentio meter the volu me can be changed by the user.
5. PCB LAYOUT
Receiver
6. COMPONENT LAYOUT
7. COST ESTIMATION
COMPONENTS BD140 LM741 I.M386 UM66 SPEAKER I/4W RESISTOR 47K PRESET BC547 9V BATTERY 1N4007 I0MFD/25V CAPACITOR 0.1MFD DISC CAPACITOR 8PIN IC BASE QTY 1 1 1 1 1 10 2 2 2 2 4 5 2 RATE COST 3.00 3.00 10.00 10.00 20.00 20.00 20.00 20.00 25.00 25.00 0.25 2.50 5.00 10.00 2.50 5.00 70.00 140.00 1,00 2.00 2.50 10.00 1.00 5.00 1.00 2.00
LM7805 PCB WIRE IR LED PHOTO TRANSISTOR SOLDI'.RING IRON (25 W) SOLDER & FLUX EXTRA TOTAL
1 [OMtr 2 I 1 1
8. CONCLUSION
The IR MUSICAL TRANSMITTER AND RECEIVER we designed is working properly. By doing the project, we got a lot of experience with the electronic components and more over we learn the PCB designing tips.
9. REFERENCE
FAIRCHJLO
MICONDUCTDR'
www.fairchildsemi.com
KA78XX/KA78XXA
3-Terminal 1A Positive Voltage Regulator
Features
The K.A78XX/KA78XXA series of three-terminal positive regulator are available in the TO-220/D-PAK package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs internal current limiting, thermal shut down and safe operating area protection, making it essentially indestructible. If adequate heat sinking is provided, they can deliver over 1 A output current. Although designed primarily as fixed voltage regulators, these devices can be used with external components to obtain adjustable voltages and currents.
TO-220
Output Current up to l A Output Voltages of 5, 6, 8,9, 10, 12, 15, 18, 24V Thermal Overload Protection Short Circuit Protection Output Transistor Safe Operating Area Protection
Description
1 D-PAK
PASS ELEME NT
SERIES
-o
REFERENCE VOLTAGE
Rev. 1.0.0
MOTOROLA
LM833
Low Voltage Noise: 4.5 nV/ v 'Hz High Gain Bandwidth Product: 15 MHz High Slew Rate: 7.0 V/us Low Input Offset Voltage: 0.3 mV Low T.C. of Input Offset Voltage: 2.0 uV/C Low Distortion: 0.002% Excellent Frequency Stability Dual Supply Operation
PIN CONNECTION S MAXIMUM RATINGS RatingSymbolValueUnitSupply Voltage (Vcc to VEE)vs+36VInput Differential Inp uts Voltage Range (Note 1)V|DR30VInput Inp 1 Voltage Range (Note 1)V|R15VOutput uts Short Circuit Duration (Note 2 (Top 2)lSCIndefiniteOperating Ambient View Temperature RangeTA-40 to +85'-'COperating)Junction TemperatureTj+ NOTES: 1. Either150cStorage TemperatureTstg-60 or ORDERING both input voltages must not INFORMATION DeviceOperating Dissipation (Notes exceed the magnitude of Vcc orPower Temperature to+150Maximum ^EERangePackageLM833NTA considered 2. Power dissipation3)Pd500mW 40 to to 2 and must be = ensure maximum junction temperature +85CPlastic DIPLM833D (Tj) is not exceeded (seeSO-8 dissipation power performance characteristic). 3. Maximum value at T/\ < 85"C.
LM833
ELECTRICAL CHARACTERISTICS (Vrjc = +15 V, VFE = -15 V, TA = 25C, unless otherwise noted.)
Characteristic Input Offset Voltage (R$ = 10 ft Vo = 0 V) Average Temperature Coefficient of Input Offset Voltage RS = 10 ft V0 = 0 V, TA = T,ow to Thigh Input Offset Current (VQM = 0 V, Vo = 0 V) Input Bias Current (VCM = 0 V, Vo = 0 V) Common Mode Input Voltage Range Large Signal Voltage Gain (R|_ = 2.0 kft Vo = 10 V Output Voltage Swing: RL = 2.0 kft V|D = 1.0 V RL = 2.0 kQ V| D= 1.0 V RL = 10kl'V|D = 1.0V R|_ = 10kUV|D = 1.0V Common Mode Rejection (Vin = 12 V) Power Supply Rejection (V$ = 15 V to 5.0 V, -15 V to -5.0 V) Power Supply Current (VQ = 0 V, Both Amplifiers)
V
A
Min
-12 90 10 12
Typ 0.3 2.0 10 300 +14 -14 110 13.7 -14.1 13.9 -14.7
Max 5.0
Unit mV uV/C nA nA V
dB V
Vo+
v0+ v0-
-10 -12
voCMR PSR
ID
80 80
8.0
dB dB mA
Min 5.0 10
AC ELECTRICAL CHARACTERISTICS (VCc = +15 V, VEE = -15 V, TA = 25C, unless otherwise noted.)
Characteristic Slew Rate (Vjn = -10 V to +10 V. R|_ = 2.0 kft Ay = +1.0) Gain Bandwidth Product (f = 100 kHz) Unity Gain Frequency (Open Loop) Unity Gain Phase Margin (Open Loop) Equivalent Input Noise Voltage (Rs Equivalent Input Noise Current (f Power Bandwidth Symbol
SR
GBW
Max
fu
e
en in BWP THD
= 1.0 kHz)
Distortion (R|_ = 2.0 kft f = 20 Hz to 20 kHz, Vo = 3.0 Vrms, Ay = +1.0) Channel Separation (f = 20 Hz to 20 kHz)
cs
1000
<
600
h 800 LU
z _v C c =
VEE = -V C M = +15 V -15 V 400 A W UV -55 75
ZD O-2
R
600
-25
0 25
50
1 0 0
800
9 99 200
400 200
s
V
i
\ \
V
\ \
>
0 50 100 TA, AMBIENT TEMPERATURE (C) -50 150 125
GENERAL-PURPOSE AMPLIFIERS
|iA741r(iA741Y OPERATIONAL
Short-Circuit Protection Offset-Voltage Null Capability Large Common-Mode and Differential Voltage Ranges No Frequency Compensation Required Low Power Consumption No Latch-Up Designed to Be Interchangeable With Fairchild |iA741
OFFSET
ININ +
c-
N C N C CC + OUT N OFFSET N 2 NC
FMC
description
The uA741 is a general-purpose operational amplifier featuring offset-voltage null capability. The high common-mode input voltage range and the absence of latch-up make the amplifier ideal for voltage-follower applications. The device is short-circuit protected and the internal frequency compensation ensures stability without external components. A low value potentiometer may be connected between the offset null inputs to null out the offset voltage as shown in Figure 2. The uA741C is characterized for operation from 0 C to 70 C. The uA741l is characterized for operation from -40:C to 85C.The uA741M is characterized for operation over the full military temperature range of-55C to 125C.
symbol
Pmduos conform to specifications per the terms of Texas Instruments sisr&nl warranry. Production processing does not necessarily include res' of 3f! parameters.
Tg
OFFSE T N1
OUT
CJ u. UJ
11
i o 51 o U 2 Z 2 > UJ
NC - No internal connection
Texas Instruments
POST OFKICF BOX 655303 DALLAS. TEXAS 75265
LiA741f LIA741Y
AVAILABLE OPTIONS PACKAGED DEVICES CERAMIC PLASTIC DIP CERAMIC DIP (JG) TSSOP (PW) DIP (J) (P) UA741CP UA741IP UA741CPW
U.A741Y
-55'C to
schematic
UA741MFK
UA741MJ
U.A741MJG
UA741MU
125'C The D package is available taped and reeled. Add the suffix R (e.g.. U.A741CDR).
TEXAS INSTRUMENTS
POST OfFICt BOX 655303 DALLAS, TEXAS 75265
TO92
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
Value
30 30 5.0 500 -55 to +150
Units
V V V mA C
VEBO
lc
Tj. T5tg
NOTES:
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
1) 2)
These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
PD RSJC Raj A Total Device Dissipation Derate above 25C
Characteristic
Max
BC548/A/B/C 625 5.0 83.3 200
Units
mW mW/C C/W C/W
548ABC. Rev B