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Electronic Circuit Design

<Chapter 6> Single-Stage Integrated-Circuit Amplifiers

INTRODUCTIONS
Study of integrated circuit amplifiers Design of basic building blocks of IC amplifiers Topics Comparison of the MOSFET and the BJT IC Biasing Current Sources, Current Mirrors High-Freq. Response General Considerations The CS & CE Amplifiers with Active Loads The CG & CB Amplifiers with Active Loads The Cascode Amplifier The CS & CE Amplifiers with Source (Emitter) Degeneration The Source & Emitter Followers Some Useful Transistor Pairing Current-Mirror Circuits with Improved Performance SPICE Simulation Examples

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6.2 Comparison of MOSFET and BJT

6.2.1 Typical Values of MOSFET Parameters

L higher density, higher speed, wider bandwidth tox Cox p & n p/n (0.5 0.2) pCox & nCox lower overdrive voltage & higher transconductance |Vt| but VDD serious design challenge V'A VA=V'AL lower output resistance Cov stays more or less constant
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6.2.2 Typical Values of IC BJT Parameters

standard, old, high-voltage process advanced, modern, low-voltage process the lateral pnp is inferior to the vertical npn (, F) the base width WB (a few microns the order of 0.1m) AE IS F fT (400MHz~500MHz 10GHz~25GHz) VA (but still reasonably high at 35V) breakdown voltage VCE0 (50V 8V) VCC (15V 5V or 3.3V)
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6.2.3 Comparison of Important Characteristics

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6.2.3 Comparison of Important Characteristics

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6.2.3 Comparison of Important Characteristics

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6.2.3 Comparison of Important Characteristics

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6.2.3 Comparison of Important Characteristics

Intrinsic gain : maximum gain available from a single transistor ( gmro ) VOV wider bandwidth, VOV higher low-frequency gain L higher intrinsic gain, L higher speed Unity-gain frequency, Gain-bandwidth product, t=gm/CL

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Example 6.2
Compare the values of gm, Rin, ro, Ao for an NMOSFET fabricated in 0.25um technology and an npn BJT fabricated in the low-voltage technology (ID = IC = 100uA, L=0.4um, W=4um) Solution NMOS
W g m = 2( nCox ) I D L = 2 267 10 100 = 0.73mA/V Rin =
' VA VA L 5 0.4 ro = = = = 20k ID ID 0.1

npn
gm = I C 0.1mA = = 4mA/V VT 25mV

Rin = r = ro =

0
gm

100 = 25k 4m

VA 35 = = 350k I C 0.1

A0 = g m ro = 0.73 20 = 14.6V/V

A0 = g m ro = 4 350 = 1400V/V

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Example 6.3
For an npn BJT fabricated in the low-voltage technology, find gm, ro, Ao, Cde, Cje, C, C, fT, ft (CL=1pF) for IC = 10uA, 100uA, and 1mA. Assume CC0 Solution
gm = ro = IC I = C = 40 I C A/V VT 25mV

C je 2C je 0 = 10 fF C = Cde + C je C C 0 = 5 fF fT =
9

VA 35 = IC IC VA 35 = = 1400V/V VT 0.025
12

A0 =

gm 2 (C + C ) gm gm = 2CL 2 11012

Cde = F g m = (10 10 ) g m = 0.4 10 I C F

ft =

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Example 6.3
For an NMOS fabricated in 0.25um technology, find W/L, gm, ro, Ao, Cgs, Cgd, fT, ft(CL=1pF) for ID = 10uA, 100uA, and 1mA. Assume L=0.4um, VOV = 0.25V Solution
ID = W 2 1 W 1 1 nCox VOV = 267 L L 16 2 2
2 2 C gs = WLCox + Cov = W 0.4 5.8 + 0.6W 3 3 C gd = Cov = 0.6W fT = ft = gm 2 (C gs + C gd ) gm gm = 2CL 2 11012

W = 0.12I D L ID I gm = = D = 8I D A/V VOV / 2 0.25/2 ro = V L 5 0.4 2 = = ID ID ID

' A

A0 = g m ro = 16V/V

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6.3 IC Biasing Current Sources, Current Mirrors, and Current-Steering Circuits

6.3.1 The Basic MOSFET Current Source
1 ' W I D1 = k n (VGS Vtn ) 2 2 L 1 I D1 = I REF = VDD VGS R 1 ' W I O = I D 2 = kn (VGS Vtn ) 2 2 L 2 IO (W / L) 2 = I REF (W / L)1

Current Mirror

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6.3.1 The Basic MOSFET Current Source Effect of VO on IO

Two nonidealities (1) limited output range
VO VGS Vt = VOV

(2) finite output resistance

RO VO V = ro 2 = A2 I O IO

IO I REF

(W / L) 2 (1 + VDS 2 / VA2 ) (W / L) 2 VO VGS 1 + VA 2 (W / L)1 (1 + VDS1 / VA1 ) (W / L)1

V V V V (1 + VDS 2 / VA2 ) VDS 2 VDS1 1 1 + DS 2 DS1 = 1 + DS 2 DS1 1 + VA 2 VA 2 VA 2 (1 + VDS1 / VA1 ) VA2 VA2
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6.3.2 MOS Current-Steering Circuits

I 2 = I REF

(W / L)3 (W / L) 2 , I 3 = I REF (W / L)1 (W / L)1

I 4 = I3 , I5 = I 4

(W / L)5 (W / L) 4

VD 2 , VD 3 VSS + VGS1 Vtn , or VSS + VOV 1

VD 5 VDD | VOV 5 |

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6.3.3 BJT Circuits

Assume Q1 = Q2 1 = 2 = , I S1 = I S 2 = I S , VA1 = VA2 = VA

(1) = & VA =
I B1 = I B 2 = 0 I REF = I C1 = I S eVBE1 / VT I O = I C 2 = I E 2 = I S eVBE 2 /VT VBE1 = VBE 2 I O = I REF (2) & VA = IO I REF =1

I C1 = I S eVBE1 /VT , I C 2 = I S eVBE 2 / VT VBE1 = VBE 2 I C1 = I C 2 = I C I REF = I C1 + I B1 + I B 2 IO = IC 2 = IC

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+2 = IC + + = IC
IC IC

IO I REF

+2

1 1+ 2 /

6.3.3 BJT Circuits

(3) & VA
V I I C1 = I S eVBE1 /VT 1 + CE1 , I B1 = C1 , VA
IO I REF = IC 2 IC 2 = I C1 + I B1 + I B 2 I C1 + ( I C1 / ) + ( I C 2 / ) 1+

V I I C 2 = I S eVBE 2 / VT 1 + CE 2 , I B 2 = C 2 VA

VCE 2 V V V 1 + CE 2 1 + CE 2 1 + CE 2 VA VA VA 1 1 VA = = V V 2 2 2 VCE1 2 VCE1 V 2 V 1 V 1 + 1 + CE1 1 + 1 + CE1 1 + + CE1 + CE1 + CE 2 1 + + VA VA VA VA VA VA VA 1 1+ 2 / VCE 2 VCE1 1 1 1 + VA VA 1 + 2 / VCE 2 VCE1 1 + VA VA

IO I REF

1 1+ 2 /

VO VBE 1 + VA
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6.3.3 BJT Circuits

1 = 2 = , VA1 = VA2 = VA , I S 2 = mI S1
(1) = & VA = IO I REF (2) & VA =
IO I REF (3) & VA IO I REF = m 1 + (m + 1) / VO VBE 1 + VA = m 1 + (m + 1) /

I S 2 Area of EBJ of Q 2 = =m I S1 Area of EBJ of Q1

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6.3.3 BJT Circuits A Simple Current Source

I REF = IO =

VCC VBE R VO VBE 1 + VA

I REF 1+ 2 /

Ro = ro 2

VA V A I O I REF

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6.3.3 BJT Circuits Current Steering

I REF =

VCC + VEE VEB1 VBE 2 R

I1 I 2 I REF I 3 2 I REF I 4 3I REF

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Exercise 6.8

& VA =
I REF = I CREF + I BREF + I B1 + I B 2 + L I BN = IC + N +1

IC =

+ N +1 IC
I REF = 1 I REF 1 + ( N + 1) /

I1 = I 2 = L = I N =

+ N +1

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6.3 High-Frequency Response General Considerations

IC amplifier circuits do not employ bypass & coupling capacitors are directly coupled direct-coupled or dc amplifiers Gain falls off at the high-frequency end due to the internal capacitances of the transistors

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6.4.1 The High-Frequency Gain Function

A( s) = AM FH ( s)
AM : midband gain, (low-frequency gain or dc gain for IC amplifiers) can be determined with neglecting the transistor internal capacitances By taking these capacitances into account, the gain acquires the factor FH(s)
FH ( s) = (1 + s / Z 1 )(1 + s / Z 2 ) L(1 + s / Zn ) (1 + s / P1 )(1 + s / P 2 ) L(1 + s / Pn )

P1 , P 2 , L, Pn ;
positive numbers representing the frequencies of the n real poles

Z 1 , Z 2 , L, Zn ;
positive, negative, or infinite numbers representing the frequencies of the n real transmission zeros

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6.4.2 Determining the 3-dB Frequency fH

FH ( s) = (1 + s / Z 1 )(1 + s / Z 2 ) L(1 + s / Zn ) (1 + s / P1 )(1 + s / P 2 ) L(1 + s / Pn )

If P1 << P 2 , P 3 , L, Z 1 , Z 2 ,L then FH ( s) 1 , H P1 1 + s / P1

Otherwise

H = 1 /

2 2 P1 P 2

1 1 + L 2 2 + 2 + L Z 1 Z 2

dominant-pole approximation can be used as a rule of thumb if the lowest-freq. pole is separated from the nearest pole or zero by at least two octaves (a factor of four) the approximate formula can be used if a dominant pole does not exist
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Example 6.5
Determine the 3-dB frequency approximately and exactly
s 1 5 10 FH ( s) = s s 1 + 4 1 + 4 10 4 10

Solution dominant-pole approximation

H 104 rad/s

approximate formula
H 1 /
1 1 2 + 10 = 9800rad/s 108 16 108 10

exact value
H = 9537rad/s
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6.4.3 Using Open-Circuit Time Constants for Approximate Determination of fH

1 + a1s + a2 s 2 L an s n FH ( s) = , 2 n 1 + b1s + b2 s Lbn s b1 = 1

P1 P 2

+L+

Pn
b1 = Ci Rio
i =1 n

b1 can be computed by summing the individual time constants called open-circuit time constants

If a dominant pole exists (say, P1 ) then Thus b1 1

P1

, H P1 1

1 = b1

C R
i =1 i

Rio can be determined by Ck = 0 (open) for ki Vs = 0 & Is = 0 determine the resistance seen by Ci

io

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Example 6.6
High-frequency equivalent circuit of a common-source MOSFET amplifier

' Rsig = 100k, Rin = 420k, C gs = C gd = 1pF, g m = 4mA/V, RL = 3.33k

Find the midband voltage gain AM = Vo/Vsig and the upper 3-dB frequency fH Solution midband voltage gain : internal cap. open
Vgs = AM Rin ' Vsig , Vo = g mVgs RL Rsig + Rin Vo Rin ' = g m RL Vsig Rsig + Rin 420 4 3.33 420 + 100 = 10.8V/V =
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Example 6.6
Upper 3-dB frequency (1) open-circuit time constant of Cgs
Rgs = Rin // Rsig = 420 // 100 = 80.8k

gs = C gs Rgs = 80.8ns

(2) open-circuit time constant of Cgd

Vgs = R' I x , R' = Rin // Rsig
' I x = g mVgs + (Vgs + Vx ) / RL ' ' Rgd = Vx / I x = R'+ RL + g m RL R' = 1.16M

gd = C gd Rgd = 1160ns

1 = 806krad/s f H = 128.3kHz gs + gd
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6.4.4 Millers Theorem

V2 = KV1 Z1 = Z2 = Z 1 K Z 1 1 K

Proof
I1 = V1 V V V KV1 Z =I = 1 2 = 1 = V1 / Z1 Z Z 1 K

I2 =

V V V / K V2 V2 Z =I = 1 2 = 2 = V2 / Z2 Z Z 1 1/ K

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6.4.4 Millers Theorem

An important caution the Miller equivalent circuit is valid only as long as the conditions that existed in the network when K was determined are not changed Miller's theorem is very useful in determining the input impedance and the gain of an amplifier it cannot be used to determine its output resistance the change of K Example : Common-source amplifier Cgd gives rise to an input capacitance bet. gate and ground if Cgd = 1pF & K = -100 V/V C1 = Cgd(1-K) = 101pF this large input cap. will limit the high-freq. response this multiplication effect is known as the Miller Effect

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