Erratum: Theory of electron transport in small semiconductor devices using the Pauli master equation [J. Appl. Phys.

83, 270 (1998)]

Massimo V. Fischetti Citation: J. Appl. Phys. 83, 6202 (1998); doi: 10.1063/1.367504 View online: http://dx.doi.org/10.1063/1.367504 View Table of Contents: http://jap.aip.org/resource/1/JAPIAU/v83/i11 Published by the American Institute of Physics.

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JOURNAL OF APPLIED PHYSICS

VOLUME 83, NUMBER 11

1 JUNE 1998

ERRATA

Erratum: Theory of electron transport in small semiconductor devices using the Pauli master equation J. Appl. Phys. 83, 270 1998
Massimo V. Fischetti
IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598

S0021-8979 98 01111-6

1. Equation 2 on page 272 should read: i t ,H H res t ,

res

since evidently the term H res present in the right-hand side of Eq. 1 has already been absorbed into the last term on the right-hand side. 2. The equation after Eq. 8 on page 273 should read: z A exp ik z exp ik z i , 0 have been considered. in general, although only states with 3. Equation 30 on page 278 should read: D 2D E m*
2

E E

2 1 r
2

30

4. Page 280, the fourth line from the top, left column, should read: ...state or modifying the reservoir term in Eqs. 15 ,.... 5. Equations 39 , 41 , and 42 on page 280 should read: O z E kin z
v dri f t z

1 z,z 1 z,z

K z zO E K

, z d dz z
2

39 , , 41 42

eV z Im * z

1 z,z m * z

for consistency with the average quantities per particle actually plotted in Figs. 3 and 5. 6. Page 285, the fourth line in the caption of Fig. 8 should read: ...processes. The various curves are parametrized by the applied bias from 0.05... since there is no curve corresponding to a bias of 0 V. 7. Page 290, footnote 40 should read: The smallness of the dimensionless electron-phonon coupling constant follows from van Hoves argument. Since thermal phonons act incoherently i.e., with random phases , the root mean square displacement x 2 1/2 of the ions associated to the thermal phonons is proportional to the square root of the number of phonons, N q , and it takes a very small value. So, for acoustic phonons x 2 1/2 is of the order of N q /(2M c c s q) 1/2, where M c is the mass of the unit cell and N q the number of phonons of wave vector q. In the high temperature limit, x 2 1/2 k B T/(2M c ) 1/2/(c s q), so that the shift of the conduction 2 1/2 2 1/2 band edge caused by the strain induced by this displacement is Ec , about 25 ac ac q x ac k B T/(2M c c s ) meV in Si at 300 K, where the acoustic deformation potential is measured in eV. For optical phonons, x 2 1/2 2 1/2 N o p /(2M c o p ) 1/2. For Si, 8.2 10 11 cm, so that E c (DK) op x 2 1/2 8(DK) o p op 60 meV, and x 8 meV, where the optical deformation potential is measured in units of 10 eV/cm. In both cases the perturbation caused by phonons is at most of the order of hundreds of meV. Thus, E c /E 0 , where E 0 e/(4 0 a 0 ), 0 being the vacuum permittivity and a 0 the Bohr radius, is the energy-scale of the unperturbed Hamiltonian of an electron in the crystal, H 0 . Thus, is of the order of 10 2 or less, and terms of the order 2 represent small corrections.
0021-8979/98/83(11)/6202/1/$15.00 6202 1998 American Institute of Physics

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