NDD03N80Z, NDF03N80Z NChannel Power MOSFET

800 V, 4.5 W
Features

ESD DiodeProtected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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V(BR)DSS 800 V RDS(ON) MAX 4.5 W @ 10 V

ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)

Rating DraintoSource Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC, TA = 100C Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC GatetoSource Voltage Single Pulse Avalanche Energy, ID = 2.5 A ESD (HBM) (JESD22A114) RMS Isolation Voltage (t = 0.3 sec., R.H. 30%, TA = 25C) (Figure 14) Peak Diode Recovery (Note 2) Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd VISO dv/dt IS TL TJ, Tstg 2.9 1.9 12 96 30 100 2300 4500 4.5 3.3 260 55 to 150 NDD NDF 800 3.3 (Note 1) 2.1 (Note 1) 13 25 Unit V A A A W V mJ V V V/ns A C C 1 1 2 3 2 3 4 S (3) G (1) N-Channel D (2)

NDF03N80ZH TO220FP CASE 221AH

NDD03N80Z1G IPAK CASE 369D 4 1 2

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Limited by maximum junction temperature 2. IS = 3.3 A, di/dt 100 A/ms, VDD BVDSS, TJ = +150C

NDD03N80ZT4G DPAK CASE 369AA

MARKING AND ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.

Semiconductor Components Industries, LLC, 2012

August, 2012 Rev. 0

Publication Order Number: NDD03N80Z/D

NDD03N80Z, NDF03N80Z
THERMAL RESISTANCE
Parameter JunctiontoCase (Drain) JunctiontoAmbient Steady State NDF03N80Z NDD03N80Z (Note 3) NDF03N80Z (Note 4) NDD03N80Z (Note 3) NDD03N80Z1 Symbol RqJC RqJA Value 4.0 1.3 50 33 96 Unit C/W

3. Insertion mounted 4. Surface mounted on FR4 board using 1 sq. pad size (Cu area = 1.127 sq [2 oz] including traces).

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)

Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient DraintoSource Leakage Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Static Drain-to-Source On Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance (Note 6) Output Capacitance (Note 6) Reverse Transfer Capacitance (Note 6) Total Gate Charge (Note 6) Gate-to-Source Charge (Note 6) Gate-to-Drain (Miller) Charge (Note 6) Plateau Voltage Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge Ciss Coss Crss Qg Qgs Qgd VGP Rg td(on) tr td(off) tf VSD trr ta tb Qrr VGS = 0 V, VDD = 30 V IS = 3.3 A, di/dt = 100 A/ms TJ = 25C TJ = 100C VDD = 400 V, ID = 3.3 A, VGS = 10 V, RG = 0 W VDS = 400 V, ID = 3.3 A, VGS = 10 V VDS = 25 V, VGS = 0 V, f = 1 MHz 440 52 9.0 17 3.5 9.1 6.5 5.5 9.0 7.0 17 9.0 0.9 0.8 360 81 280 1.3 nC ns 1.6 V V W ns nC pF VGS(TH) VGS(TH)/TJ RDS(ON) gFS VDS = VGS, ID = 50 mA Reference to 25C, ID = 50 mA VGS = 10 V, ID = 1.2 A VDS = 15 V, ID = 1.2 A 3.0 4.1 11 3.7 2.1 4.5 4.5 V mV/C W S V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, ID = 1 mA Reference to 25C, ID = 1 mA VDS = 800 V, VGS = 0 V VGS = 20 V TJ = 25C TJ = 125C 800 870 1.0 50 10 mA V mV/C mA Symbol Test Conditions Min Typ Max Unit

RESISTIVE SWITCHING CHARACTERISTICS (Note 7)

SOURCEDRAIN DIODE CHARACTERISTICS IS = 3.0 A, VGS = 0 V

5. Pulse Width 380 ms, Duty Cycle 2%. 6. Guaranteed by design. 7. Switching characteristics are independent of operating junction temperatures.

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NDD03N80Z, NDF03N80Z
TYPICAL CHARACTERISTICS
3.0 2.5 2.0 1.5 6.0 V 1.0 0.5 0.0 5.0 V 5.2 V 5.8 V 5.6 V 5.4 V 25 5.0 VDS = 25 V ID, DRAIN CURRENT (A) 4.0 TJ = 55C 3.0 2.0 1.0 0.0 TJ = 150C TJ = 25C

VGS = 6.8 V to 10 V

6.6 V 6.4 V 6.2 V

ID, DRAIN CURRENT (A)

5 10 15 20 VDS, DRAINTOSOURCE VOLTAGE (V)

3 4 5 6 7 8 9 VGS, GATETOSOURCE VOLTAGE (V)

10

Figure 1. OnRegion Characteristics

RDS(on), DRAINTOSOURCE RESISTANCE (W) RDS(on), DRAINTOSOURCE RESISTANCE (W)

Figure 2. Transfer Characteristics

12 11 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 5.0

ID = 1.2 A TJ = 25C

7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5

VGS = 10 V TJ = 25C

5.5

6.0

6.5

7.0

7.5

8.0

8.5

9.0

9.5 10

3.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

Figure 3. OnRegion versus GatetoSource Voltage

VGS, GATETOSOURCE VOLTAGE (V)

Figure 4. OnResistance versus Drain Current and Gate Voltage

ID, DRAIN CURRENT (A)

RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED)

2.75 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 50 25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) ID = 1.2 A VGS = 10 V

1.15 BVDSS, NORMALIZED BREAKDOWN VOLTAGE (V) ID = 1 mA 1.10 1.05 1.00 0.95 0.90 50

150

25

0 25 50 75 100 TJ, JUNCTION TEMPERATURE (C)

125 150

Figure 5. OnResistance Variation with Temperature

Figure 6. BVDSS Variation with Temperature

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NDD03N80Z, NDF03N80Z
TYPICAL CHARACTERISTICS
10.0 10000

C, CAPACITANCE (pF)

IDSS, LEAKAGE (mA)

TJ = 150C

1000

TJ = 25C VGS = 0 V f = 1 MHz Ciss Coss

1.0

100

TJ = 125C

10

Crss

0.1

50

100 150 200 250 300 350 400 450 500 VDS, DRAINTOSOURCE VOLTAGE (V)

Figure 7. DraintoSource Leakage Current versus Voltage

15.0 14.0 13.0 12.0 11.0 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 VGS, GATETOSOURCE VOLTAGE (V) QT VDS

10 VDS, DRAINTOSOURCE VOLTAGE (V)

100

Figure 8. Capacitance Variation

400 350 VGS 300 250 200 150 VDS = 400 V ID = 3.3 A TJ = 25C 100 50 0 20

QGS

QGD

Figure 9. GatetoSource Voltage and DraintoSource Voltage versus Total Charge

1000 100 IS, SOURCE CURRENT (A)

6 8 10 12 14 16 Qg, TOTAL GATE CHARGE (nC)

18

VDD = 400 V ID = 3 A VGS = 10 V td(off) tr tf

t, TIME (ns)

100

10

10

td(on)

1.0

TJ = 150C

1.0

10 RG, GATE RESISTANCE (W)

100

0.1 0.3

125C

VDS, DRAINTOSOURCE VOLTAGE (V) 25C

450

55C 1.2

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, SOURCETODRAIN VOLTAGE (V)

Figure 10. Resistive Switching Time Variation versus Gate Resistance

Figure 11. Diode Forward Voltage versus Current

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NDD03N80Z, NDF03N80Z
TYPICAL CHARACTERISTICS
100 VGS 30 V SINGLE PULSE TC = 25C

ID, DRAIN CURRENT (A)

10

100 ms 10 ms 1 ms 10 ms dc

0.1

0.01 0.1

RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 100 1000

Figure 12. Maximum Rated Forward Biased Safe Operating Area NDD03N80Z
10

VDS, DRAINTOSOURCE VOLTAGE (V)

1 R(t) (C/W)

50% (DUTY CYCLE) 20%

10% 0.1 5.0% 2.0% 1.0% 0.01 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 1 10 RqJC = 1.3C/W Steady State 100 1000

PULSE TIME (s)

Figure 13. Thermal Impedance (JunctiontoCase) NDD03N80Z

LEADS

HEATSINK 0.110 MIN

Figure 14. Isolation Test Diagram

Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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NDD03N80Z, NDF03N80Z
Table 1. ORDERING INFORMATION
Device NDD03N80Z1G NDD03N80ZT4G NDF03N80ZH (In Development) Package IPAK (Pb-Free, Halogen-Free) DPAK (Pb-Free, Halogen-Free) TO220FP (Pb-Free, Halogen-Free) Shipping 75 Units / Rail 2500 / Tape & Reel 50 Units / Rail

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

MARKING DIAGRAMS

4 Drain YWW 3N 80ZG 4 Drain YWW 3N 80ZG NDF03N80ZH AYWW Gate Source

1 2 3 Gate Drain Source IPAK A Y WW G, H

2 1 Drain 3 Gate Source DPAK = Location Code = Year = Work Week = PbFree, HalogenFree Package

Drain TO220FP

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NDD03N80Z, NDF03N80Z
PACKAGE DIMENSIONS
TO220 FULLPACK, 3LEAD CASE 221AH ISSUE C

E E/2

A P 0.14
M

B H1 A A1

SEATING PLANE

B A

Q
1 2 3

C
NOTE 3

NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. DIM A A1 A2 b b2 c D E e H1 L L1 P Q MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.70 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.70 7.10 12.70 14.73 --2.80 3.00 3.40 2.80 3.20

L1 b 0.25
M

3X 3X

c B A
M

b2 e

A2

IPAK CASE 369D ISSUE C

B V R
4

C E Z

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93

S T
SEATING PLANE

A
1 2 3

F D G
3 PL

H
M

0.13 (0.005)

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NDD03N80Z, NDF03N80Z
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE) CASE 369AA ISSUE B
A B C A c2
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 0.040 0.155 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 1.01 3.93

E b3 L3
1 4

D
2 3

Z
DETAIL A

L4

b2 e

b 0.005 (0.13)
M

c C L2
GAUGE PLANE

H C L L1 DETAIL A
SEATING PLANE

A1

ROTATED 90 CW 5

SOLDERING FOOTPRINT*
6.20 0.244 3.00 0.118

2.58 0.102

5.80 0.228

1.60 0.063

6.17 0.243

SCALE 3:1

mm inches

*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLCs product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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NDD03N80Z/D