COURSEOUTCOMES&PROGRAMOUTCOMES

Subject:EEE132ElectronicDevices Lecturer:DrTunZainalAzniZulkifli Rooms:2.18A/1.13 Extension:6049/6010 email:eezainal@eng.usm.my COURSEDESCRIPTION Diodesandtransistorsaretypicaldevicesinelectroniccircuits,whicharemadeofsemiconductormaterials.To understandtheoperationofthesedevices,basicknowledgeofthestructureofatomsandtheinteractionof atomicparticlesinthesemiconductormaterialarenecessary.Thepnjunctionformedbyadjacentpandn semiconductorsisthebasisoftheoperationofthediodesandtransistors.Thiscoursediscussesonthecurrent flowacrossthepnjunctionthatcontributestothecharacteristicsofthediodes,BJTsandFETs. PO1Abilitytoapplyknowledgeofmathematicsandscienceinelectricalandelectronic engineering. PO2Abilitytousecurrenttechniques,skillsandengineeringtoolsnecessaryforsolving electricalandelectronicengineeringproblems. PO3Abilitytodesignanddevelopanelectricalandelectronicengineeringsysteminfulfilling desiredneedswithinpracticalconstraints. PO4Abilitytocommunicateandfunctioninmultidisciplinaryenvironment.

PROGRAMOUTCOMES

PO5Abilitytoidentify,analyzes,formulateandsolveelectricalandelectronicengineering problemsbothefficientlyandeconomically. PO6Abilitytounderstandandadheretoprofessionalpracticesandethicalresponsibilities.

PO7Abilitytounderstandtheimpactofengineeringsolutionsinaglobal,economic, environmentalandsocietalcontext. Text: 1) Streetman, B. G. and Banerjee, S. K. (2006) Solid State Electronic Devices , 6th Edition, New Jersey: Prentice Hall. 2)Singh,J.(2001)SemiconductorDevices:BasicPrinciples,NewJersey:JohnWiley.

GRADING:
Test10% Assignments20% FinalExaminations70% Total100% COURSEOUTCOMES 1 TEACHINGCONTENTS Semiconductor Materials HRS 0.5 PO1 PO2 PO3 PO4 PO5 PO6 PO7

CO1 - To describe, determine and calculate Crystal Properties and Growth of Semiconductors

Crystal Lattice

Bulk Crystal Growth

0.5

Epitaxial Growth Photoelectric Effect and Atomic Spectra Bohr Model Quantum Mechanics, Heisenberg and Shrodinger Equations Atomic Structure and Periodic Table Bonding Forces and Energy Bands in Solids Charge Carriers in Semiconductors Carrier Concentrations Drift of Carriers in Electric and Magnetic Fields

1.5

6 CO2 - To describe Atoms and Electrons qualitatively and quantitatively 7

1.5

1.5

CO3 - To describe Energy Bands and Charge Carriers in Semiconductors qualitatively and quantitatively

10

11

12

13

Optical Absorption

CO4 - To describe Excess Carriers in Semiconductors qualitatively and quantitatively

14

Luminescence Carrier Lifetime and Photoconductivity Diffusion of Carriers

0.5

15

16

1.5

17

Fabrications of pn Junctions

18

Equilibrium Conditions Forward- and ReverseBiased Junctions: Steady State Conditions Reverse-Bias Breakdown

19

20

21

Transient and AC Conditions Deviation from Simple Theory Metal Semiconductor Junctions Transistor Operation

22

0.5

23

0.5

24

25

JFET The Metal-Semiconductor FET The Metal-InsulatorSemiconductor FET The MOS FET Fundamental of BJT Operation Amplification with BJTs

26 CO5 - To describe Junctions qualitatively and quantitatively and their analysis and application to FET and BJT

27

28

29

30

0.5

31

BJT Fabrication

0.5

32

Minority Carrier Distributions and Terminal Current Generalized Biasing

0.5

33

0.5

34

Switching

0.5

35

Other Important Effects

0.25

36 \

Frequency Limitation of Transistors

0.25