EE-3130 Formula Sheet

Millers theorem Zc Z 1 = ------------ ; 1K Zc Z 2 = ------------ ; 1 1 --K V2 K = ----V1 Bipolar Junction Transistors = ----------- ; i C = i E = i B ; +1 i E = ( + 1 )i B

LP transfer function:

K T ( j ) = --------------------- ----- 1+j o

BJT Small Signal Parameters ic IC Transconductance: g m = ------ = ----- ; v be VT v be VT Base Resistance: r = ------ = ----- = ----ib IB gm VT v be Emitter Resistance: r e = ------ = ----- = ----ie IE gm vc Voltage Gain: ------ = g m R C v be Junction Field-Effect Transistors Triod (VCR) Region: v GS v DS v DS 2 i D = I DSS 2 1 ------- -------- ------- V p V p V p v DS r DS = ------iD Boundary: 2I DSS v GS = ------------- 1 ------- Vp Vp v DS i D = I DSS ------- Vp
2 1

K HP transfer function: T ( j ) = ---------------------0 1 j ----- R2 Inverting op-amp (ideal): G = ----R1 R2 Non-inverting op-amp (ideal): G = 1 + ----R1 1Inverting integrator: v o ( t ) = ------- v I dt + v o ( 0 ) RC
0 t

dv I Inverting differentiator: v o ( t ) = RC dt Inverted summer: Rf Rf Rf v 0 = ----- v 1 + ----- v 2 + + ----- v n R1 R2 Rn Internally compensated op-amp: Non-ideal op-amp: Ao fb = ft

v DS = small

v DG = V p

Pinch-off region: n-MOSFET Triod region:

v GS 2 i D = I DSS 1 ------- Vp

t, op amp 3dB = -----------------------R2 1 + ----R1

Non-Ideal Diode --------- i = I S e nV T 1 ; I2 V 2 V 1 = 2.3nV T log --- ; I 1 Peak Rectifier (sine wave input): V im V Lr, p p = ----------fCR L
v

kT V T = ----qe nV T r d = -------ID

W 1 2 i D = n C ox ---- ( v GS V t )v DS -- v DS L 2 Saturation region: 1 W i D = -- n C ox ---- ( v GS V t ) 2 2 L VA Output Resistance: r o = ----ID Transconductance: 2I D W g m = n C ox ---- ( V GS V t ) = -------------------L V GS V t

EE-3130 Formula Sheet

iD n-JFET vGS =0 iD Triode region n-MOSFET Saturation Region vDS > vGS - Vt vGS =Vt+4 vGS =-1 Pinch-off vDG > -Vp vGS =Vt+3

IDSS

vGS =Vt+2 vGS =Vp -Vp vDS vGS -Vt

vGS =<Vt (cut off) vDS

iD

p-JFET vSG =0

IDSS

vSG =-1 Pinch-off vGD > Vp

vSG =-Vp Vp vSD