1.

1 ampere of current represent motion of (a) 7 109 (b) 6 108 (c) 6 1010 (d) 6 107

electrons / sec

2. When the potential varies linearly from 0V to 10V between two points spaced 10cm, the resulting eld between the two points (from lower potential to higher potential) is . (a) 1000V/m (b) 200V/m (c) 100V/m (d) 10V/m 3. If potential is not uniform, then the relation between electric eld E and potential V is given by (a) E = Vdx (b) V = dE dx (c) E = -V (d) E =
dV dx

4. Give the unit for the magnetic eld intensity (a) m/v (b) v/m (c) wb/m2 (d) Webers 5. When a charged particle enters the magnetic eld parallel to eld, then path followed by it is (a) Helix (b) Straight line (c) Circle (d) Cycloid 6. If an electron falls through a potential dierence of 1 volt,then its nal velocity becomes (a) 693 Km/sec (b) 393 Km/sec (c) 593 Km/sec (d) 493 Km/sec 7. When no signal is applied to the CRO, the display on the screen is (a) Vertical line. (b) Zigzag (c) A bright spot (d) Horizontal Line 8. The electrostatic deection sensitivity for decrease in distance between the deection plates by a factor of 2 will be . (a) Tripled (b) Doubled (c) Squared (d) Constant 9. If the two signals are having the same frequency, dierent amplitude and phase dierence is 900 then the lissajous gure that results is, that (a) circle (b) ellipse (c) straight line (d) parabola 10. The accelerating eld is the potential between the following (a) Cathode and deection plates (b) Screen & deection plates. (c) Cathode and grid (d) Vertical & horizontal deection plates 11. One of the following is a pentavalent impurity (a) P (b) In (c) Sb (d) Al 12. In an unbiased PN junction, zero current implies that (a) Number of holes diusing from p - side to n - side equals the no. of electrons diusing from n - side to p - side. (b) No carriers cross the junction. (c) Total current crossing the junction from p - side to n - side equals the total current crossing the junction from n - side to p - side. (d) The potential barrier has disappeared. 13. In n type silicon, the donor concentration is 1 atom per 2 108 silicon atoms. Assuming that the eective mass of the electron equals the true mass, nd the value of temperature at which, the fermi level coincides with the edge of the conduction band. Concentration of silicon is 5 1022 atom/cm3 . (a) 140 K (b) 1.40 K (c) 0.140 K (d) 0.40 K 14. A silicon diode at room temperature (300K) conducts 1mA at 0.7V. Given that the voltage increases to 0.8V. Calculate the diode current assume =1 (a) 4.68mA (b) 0.468mA (c) 46.8mA (d) 468mA 15. The electron diusion current constant Dn for germanium at room temp is (a) 0.93 104 m2 /Sec. (b) 93 104 m2 /Sec. (c) 9.3 104 m2 /Sec. (d) 0.093 104 m2 /Sec. 16. If the EW1 & EW2 are the work functions of Two metals then the potential energy dierence E = (a) EW2 EW1 (b) EW1 /EW2 (c) EW1 + EW2 (d) EW1 EW2 17. At 100 C the reverse saturation current in p-n junction is 5A Find its value at 200 C (a) 10 micro amps. (b) 640 micro A (c) 1209 micro A (d) 740 micro A 18. Fermi level in an N-type material EF =
Nc (a) Ec KT 1n Nd Nc (b) Ec + KT 1n Nd

(c)

Ec +Ev 2

(d) Ec /KT 1n Nd Nc 19. In a tunnel diode, depletion layer width is of the order of (a) 5 micron (b) 0.1 micron (c) 1 micron (d) 10 A0 20. The equivalent circuit of varactor diode is (a) Shown in gure20a

Figure 20a (b) Shown in gure20b

Figure 20b (c) Shown in gure20c

Figure 20c (d) Shown in gure20d

Figure 20d