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The force experienced by a unit positive charge at any point in an electric eld of strength E is (a) 1/E Newtons (b) E3 Newtons (c) E Newtons (d) E2 Newtons 2. The relation between potentional V and electric eld intensity E is

(a) V =



= vdx (c) V/E=dx/dt.

dE dx

(d) E =- V dx. 3. An electron starting at rest and it is accelerated through a anode voltage 900 V. Then nal velocity is (a) 1.77 107 m/s (b) 1.67 107 m/s (c) 1.87 107 m/s (d) 1.77 107 m/s 4. A conductor of length L carrying current I is placed in magnetic eld B. Then the force acting on this conductor is (a) L/BI (b) BIL (c) I/BL (d) B/IL 5. The distance covered along B direction in one revolution in helical motion is called (a) radius (b) Time (c) Pitch (d) period of rotations 6. When electron enters with zero velocity into a region where electric and magnetic elds are perpendicular to each other, the electron follows (a) circular path (b) helical path (c) Cycloidal Path (d) Parabolic path 7. The magnitude of the beam current on a CRT can be adjusted by a front panel control marked (a) astigmatism (b) focus (c) Intensity (d) time/div 8. A point source of electrons is situated in mutually perpendicular uniform magnetic and electric elds. The magnetic ux density is 0.01b/m2 and electrical eld strength is 104 v/m. Determine the minimum distance from the same at which an electron with zero velocity will again have zero velocity (a) 3.6 cm (b) 3 cm (c) 0.36 cm (d) 36 cm 9. In a CRT, a pair of deecting plates are 2.0 cm long and are spaced 0.5 cm apart. The distance from the centre of the plates to the screen is 24 cm. The nal anode voltage is 1000v and deecting voltage is 30v. Calculate the angle which the beam makes with the axis of the tube on emerging from the eld. (a) 400 (b) 30 101 (c) 30 261 (d) 300 10. If the electron is possessing initial velocity VOY , and is along the magnetic eld, the equation of motion of electron is VY = (a) Voy - at (b) voy + at (c) at. (d) Voy 11. The energy gap Eg of forbidden band for silicon at 300 K is (a) 0.72ev (b) 1.1ev (c) 0.785ev (d) 0.3ev 12. In the P-N junction diode the barrier potential VO is given by the relation (a) KT 1n n2 / NA ND i (b) KT 1n (NA ND /n2 ) i (c) KT e NA /nI (d) 1/VT 1n NA ND /n2 i 13. Find the increase in temperature T necessary to increase the reverse saturation current of a diode by a factor of 100 (a) 66.40 C (b) 6640 C (c) 6.640 C (d) 0.6640 C 14. For what voltage will the reverse current in a PN junction silicon diode reach 95 percent of its saturation value at room temperature (a) 1.5 m V (b) -150 m V (c) -1.5 m V (d) 150 m V 15. The expression for current density J interms of hole & electron concentration is (a) J = (nn + P p )E (b) J = (np + P n )eE (c) J = (nn + P p )eE (d) J = nn + P eE 16. A semiconductor material is doped with 1015 donor type atoms per cm3 . The intrinsic charge carrier concentration in the semiconductor is 1010 per cm3 . The approximate number of holes in the doped semiconductor under equilibrium condition is (a) 1010 (b) 105 (c) 0 (d) 1015 17. At 100 C the reverse saturation current in p-n junction is 5A Find its value at 200 C (a) 1209 micro A (b) 640 micro A (c) 740 micro A (d) 10 micro amps. 18. In Zener diodes (a) only avalanche break down occurs (b) both Zener and avalanche break downs occur (c) only current break down occurs (d) only Zener break down occurs 19. The negative resistance of a tunnel diode will be approximately (Typical value) (a) 100 ohm (b) 152 ohm (c) 10 ohm (d) 50 ohm 20. The fermilevel in intrinsic semiconductor EF = (a) (b) (c) (d)
Ec Ev 2 Ec +Ev 2 Ec 2 Ev 2