2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor

March 1993

2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor
General Description
These n-channel enhancement mode field effect transistors are produced using Nationals very high cell density third generation DMOS technology These products have been designed to minimize on-state resistance provide rugged and reliable performance and fast switching They can be used with a minimum of effort in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A This product is particularly suited to low voltage low current applications such as small servo motor controls power MOSFET gate drivers and other switching applications

Features
Y Y Y Y Y

Efficient high density cell design approaching (3 million in2) Voltage controlled small signal switch Rugged High saturation current Low RDS (ON)

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TO-92 7000 Series

TO-236 AB (SOT-23) 7002 Series

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Absolute Maximum Ratings

Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage Drain-Gate Voltage (RGS s 1 MX) Gate-Source Voltage Drain Current Continuous Pulsed PD Total Power Dissipation Derating above 25 C TJ TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes from Case for 10 Seconds TA e 25 C 200 500 400 32 115 800 200 16 2N7000 2N7002 NDF7000A 60 60
g 40

NDS7002A

Units V V V

400 2000 625 5

280 1500 300 24

b 65 to 150

mA mA mW mW C C C

b 55 to 150

300

C1995 National Semiconductor Corporation

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RRD-B30M115 Printed in U S A

2N7000 Electrical Characteristics TC e 25 C unless otherwise noted

Symbol OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS e 0V ID e 10 mA VDS e 48V VGS e 0V TC e 125 C IGSSF Gate-Body Leakage Forward VGS e b15V VDS e 0V 60 1 1
b 10

Parameter

Conditions

Min

Typ

Max

Units

V mA mA nA

ON CHARACTERISTICS VGS(th) rDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance Drain-Source On-Voltage VDS e VGS ID e 1 mA VGS e 10V ID e 0 5A TC e 125 C VGS e 10V ID e 0 5A VGS e 4 5V ID e 75 mA ID(ON) gFS On-State Drain Current Forward Transconductance VGS e 4 5V VDS e 10V VDS e 10V ID e 200 mA 75 100 08 21 12 19 06 0 14 600 320 3 5 9 25 04 V X X V V mA ms

VDS(ON)

DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS e 25V VGS e 0V f e 1 0 MHz 20 11 4 60 25 5 pF pF pF

SWITCHING CHARACTERISTICS ton toff Turn-On Time Turn-Off Time VDD e 15V ID e 0 5V VGS e 10V RG e 25X RL e 25X 10 10 ns ns

BODY-DRAIN DIODE RATINGS IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS e 0V IS e 200 mA 200 500 15 mA mA V

THERMAL CHARACTERISTICS RiJA RiJC Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case 312 5 40 C W C W

Pulse Test Pulse Width s 300 ms Duty Cycle s 2 0%

2N7002 Electrical Characteristics TC e 25 C unless otherwise noted

Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS e 0V ID e 10 mA VDS e 60V VGS e 0V TC e 125 C IGSSF IGSSR Gate-Body Leakage Forward Gate-Body Leakage Reverse VGS e 20V VGS e b20V 60 1 500 100
b 100

V mA mA nA nA

ON CHARACTERISTICS VGS(th) rDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS e VGS ID e 250 mA VGS e 10V ID e 0 5A TC e 125 C VGS e 5V ID e 50 mA TC e 125 C VDS(ON) Drain-Source On-Voltage VGS e 10V ID e 0 5A VGS e 5V ID e 50 mA ID(ON) gFS On-State Drain Current Forward Transconductance VGS e 10V VDS t 2 VDS(ON) VDS t 2 VDS(ON) ID e 200 mA 500 80 1 21 12 2 17 28 06 0 09 2700 320 25 75 13 5 75 13 5 3 75 15 V X X X X V V mA ms

DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS e 25V VGS e 0V f e 1 0 MHz 20 11 4 50 25 5 pF pF pF

SWITCHING CHARACTERISTICS tON tOFF Turn-On Time Turn-Off Time VDD e 30V ID e 200 mA VGS e 10V RGEN e 25X RL e 150X 20 20 ns ns

BODY-DRAIN DIODE RATINGS IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS e 0V IS e 115 mA 115 800 15 mA mA V

THERMAL CHARACTERISTICS RiJA Thermal Resistance Junction to Ambient 625 C W

Pulse Test Pulse Width s 300 ms Duty Cycle s 2 0%

NDF7000A Electrical Characteristics TC e 25 C unless otherwise noted

Symbol OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS e 0V ID e 10 mA VDS e 48V VGS e 0V TC e 125 C IGSSF Gate-Body Leakage Forward VGS e b15V 60 1 1
b 10

Parameter

Conditions

Min

Typ

Max

Units

V mA mA nA

ON CHARACTERISTICS VGS(th) rDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance Drain-Source On-Voltage VDS e VGS ID e 1 mA VGS e 10V ID e 0 5A TC e 125 C VGS e 10V ID e 500 mA VGS e 4 5V ID e 75 mA ID(ON) gFS On-State Drain Current Forward Transconductance VGS e 4 5V VDS t 2 VDS(ON) VDS t 2 VDS(ON) ID e 200 mA 400 100 08 21 12 2 06 0 14 600 320 3 2 35 1 0 225 V X X V V mA ms

VDS(ON)

DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS e 25V VGS e 0V f e 1 0 MHz 20 11 4 60 25 5 pF pF pF

SWITCHING CHARACTERISTICS ton toff Turn-On Time Turn-Off Time VDD e 15V ID e 500 mA VGS e 10V RG e 25X RL e 25X 10 10 ns ns

BODY-DRAIN DIODE RATINGS IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS e 0V IS e 400 mA 0 88 400 2000 12 mA mA V

THERMAL CHARACTERISTICS RiJA Thermal Resistance Junction to Ambient 200 C W

Pulse Test Pulse Width s 300 ms Duty Cycle s 2 0%

NDS7002A Electrical Characteristics TC e 25 C unless otherwise noted

Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS e 0V ID e 10 mA VDS e 60V VGS e 0V TC e 125 C IGSSF IGSSR Gate-Body Leakage Forward Gate-Body Leakage Reverse VGS e 20V VGS e b20V 60 1 500 100
b 100

V mA mA nA nA

ON CHARACTERISTICS VGS(th) rDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS e VGS ID e 250 mA VGS e 10V ID e 0 5A TC e 125 C VGS e 5V ID e 50 mA TC e 125 C VDS(ON) Drain-Source On-Voltage VGS e 10V ID e 500 mA VGS e 5 0V ID e 50 mA ID(ON) gFS On-State Drain Current Forward Transconductance VGS e 10V VDS t 2 VDS(ON) VDS t 2 VDS(ON) ID e 200 mA 500 80 1 21 12 2 17 28 06 0 09 2700 320 25 2 35 3 5 1 0 15 V X X X X V V mA ms

DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS e 25V VGS e 0V f e 1 0 MHz 20 11 4 50 25 5 pF pF pF

SWITCHING CHARACTERISTICS tON tOFF Turn-On Time Turn-Off Time VDD e 30V ID e 200 mA VGS e 10V RG e 25X RL e 150X 20 20 ns ns

BODY-DRAIN DIODE RATINGS IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS e 0V IS e 400 mA 0 88 280 1500 12 mA mA V

THERMAL CHARACTERISTICS RiJA Thermal Resistance Junction to Ambient 417 C W

Pulse Test Pulse Width s 300 ms Duty Cycle s 2 0%

Typical Electrical Characteristics

2N7000 2N7002 NDF7000A NDS7002A

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FIGURE 1 On-Region Characteristics

FIGURE 2 rDS(ON) Variation with Drain Current and Gate Voltage

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FIGURE 3 Transfer Characteristics

FIGURE 4 Breakdown Voltage Variation with Temperature

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FIGURE 5 Gate Threshold Variation with Temperature

FIGURE 6 On-Resistance Variation with Temperature

Typical Electrical Characteristics (Continued)

2N7000 2N7002 NDF7000A NDS7002A (Continued)

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FIGURE 7 On-Resistance vs Drain Current

FIGURE 8 Body Diode Forward Voltage Variation with Current and Temperature

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FIGURE 9 Capacitance vs Drain-Source Voltage

FIGURE 10 Gate Charge vs Gate-Source Voltage

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FIGURE 11 2N7000 Safe Operating Area

FIGURE 12 2N7002 Safe Operating Area

Typical Electrical Characteristics (Continued)

2N7000 2N7002 NDF7000A NDS7002A (Continued)

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FIGURE 13 NDF7000A Safe Operating Area

FIGURE 14 NDS7002A Safe Operating Area

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FIGURE 15 TO-92 Transient Thermal Response

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FIGURE 16 SOT-23 Transient Thermal Response

Physical Dimensions inches (millimeters)

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TO-92

2N7000 2N7002 NDF7000A NDS7002A N-Channel Enhancement Mode Field Effect Transistor

Physical Dimensions inches (millimeters) (Continued)

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Note 1 Meets all JEDEC dimensional requirements for TO-236AB Note 2 Controlling dimension millimeters Note 3 Available also in TO-236AA Contact your local National Semiconductor representative for delivery and ordering information Note 4 Tape and reel is the standard packaging method for TO-236

TO-236AB (SOT-23) (Notes 3 4)

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