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INSTITUTE FOR PHYSICS OF ELECTROTECHNOLOGY Head: Prof. Dr. rer. nat.

Gerhard Wachutka

MUNICH UNIVERSITY OF TECHNOLOGY

Course on

Physical Electronics
(Course Code: NM 6608)

Lecturer: Prof. Gerhard Wachutka

Academic Year 2012/2013


Lecture & Tutorial: 18 Febr. 1 March, 2013 Venue: S2 B5a 01 Total Hours: 45

Contents
1. Introduction and motivation: Basic energy-domain coupling effects in solidstate microstructured electronic and micromechatronical devices and their application fields: - microelectronics, - power electronics, - microsensors, microactuators, and microsystems. Intrinsic and extrinsic electrical conductivity, mobility, carrier generationrecombination, thermal conductivity, thermoelectricity, galvanomagnetism. Band theory, electronic density of states, thermodynamic equilibrium, entropy maximum principle, semiconductor carrier statistics, equilibrium properties in nonuniform, doped material systems, excess carrier phenomena, drift diffusion model and its extensions. Onsagers transport model, continuous field models of energy-coupled multidomain systems, physics-based macromodeling of microsystems

2. Characteristic equilibrium and transport properties of semiconductor materials: 3. Solid-state devices under near-equilibrium operating conditions:

4. Phenomenological transport theory as basis for "Virtual Prototyping" of microdevices and microsystems

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Literature
Physics of semiconductor devices: S. M. Sze: Physics of Semiconductor Devices, J. Wiley, New York, 2nd ed. 1981. F. F. Y. Wang: Introduction to Solid-State Electronics, North-Holland, Amsterdam, 2nd. ed. 1989. S. S. Li: Semiconductor Physical Electronics, Plenum Press, New York, London, 1992. U. K. Mishra, J. Singh: Semiconductor Device Physics and Design, Springer, Dordrecht, 2008. Application-oriented semiconductor physics: K. Seeger: Semiconductor Physics, Springer, Berlin, 2nd ed. 1982. Elementary (quantum-)statistical mechanics: A. Beiser: Concepts of Modern Physics, McGraw-Hill Kogakusha, Ltd., Tokyo, 1973. In particular: Chap. 9 Phenomenological thermodynamics and general transport theory: H. B. Callen: Thermodynamics, J. Wiley, New York, 2nd ed., 1961. J. F. Nye: Physical Properties of Crystals, Clarendon Press, Oxford, 1993. Physical modeling of microdevices, MEMS and NEMS: A. Schenk: Advanced Physical Models for Silicon Device Simulation, Springer, Wien, 1998. S. Selberherr: Analysis and Simulation of Semiconductor Devices, Springer, Wien, 1984. S. Senturia: Microsystem Design, Kluwer Academic Publ., Boston, 2001. J. G. Korvink, A. Greiner: Semiconductors for Micro- and Nanotechnology, Wiley-VCH, Weinheim, 2002.

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J. J. Liou: Advanced Semiconductor Device Physics and Modeling, Artech House, Norwood, MA, 1994. T. Zhang, K. Chakrabarty, R. B. Fair: Microelectrofluidic Systems Modeling and Simulation, CRC Press, London, New York, 2002. Applications of micro- and nanodevices in mechatronics (sensors, actuators, microsystems): G. L. Hornyak, J. Dutta, H. F. Tibbals, A. K. Rao: Introduction to Nanoscience, CRC Press, Boca Raton, London, New York, 2008. M. Elwenspoek, R. Wiegerink: Mechanical Microsensors, Springer, Berlin, 2001. J. W. Gardner: Microsensors , John Wiley, Chichester, 1994. W. Gpel, J. Hesse, J.N. Zemel (Eds.): Sensors, Vol. 1 ff., VCH, Weinheim, New York, book series since 1991. H. Baltes, O. Brand, G.K. Fedder, C. Hierold, J. Korvink, O. Tabata (Eds.): Advanced Micro- and Nanosystems, Vol. 1-6 ff, Wiley-VCH, Weinheim, since 2004. S. E. Lyshevski: MEMS and NEMS, CRC Press, London, New York, 2002. S. M. Sze: Semiconductor Sensors, John Wiley & Sons, New York, 1994.

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