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APPENDIX A: Parameter List

A.1 BSIM3v3 Model Control Parameters


Symbols used in equation none Mobmod Capmod Nqsmod Noimod Symbols used in SPICE level mobmod capmod nqsmod noimod Description BSIMv3 model selector Mobility model selector Flag for the short channel capacitance model Flag for NQS model Flag for noise model Default 8 1 1 0 1 Unit none none none none none Note

A.2 DC Parameters

Symbols used in equation Vth0

Symbols used in SPICE vth0

Description Threshold voltage @Vbs=0 for Large L.

Default 0.7 (NMOS) -0.7 (PMOS)

Unit V

Note nI-1

K1

k1

First order body effect coefficient

0.5

V1/2

nI-2

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DC Parameters

Symbols used in equation K2 K3 K3b W0 Nlx Vbm Dvt0 Dvt1 Dvt2 Dvt0w

Symbols used in SPICE k2 k3 k3b w0 nlx vbm dvt0 dvt1 dvt2 dvt0w

Description Second order body effect coefficient Narrow width coefficient Body effect coefficient of k3 Narrow width parameter Lateral non-uniform doping parameter Maximum applied body bias in Vth calculation first coefficient of short-channel effect on Vth Second coefficient of shortchannel effect on Vth Body-bias coefficient of shortchannel effect on Vth First coefficient of narrow width effect on Vth for small channel length Second coefficient of narrow width effect on Vth for small channel length Body-bias coefficient of narrow width effect for small channel length Mobility at Temp = Tnom NMOSFET PMOSFET

Default 0.0 80.0 0.0 2.5e-6 1.74e-7 -5.0 2.2 0.53 -0.032 0

Unit none none 1/V m m V none none 1/V 1/m

Note nI-2

Dvt1w

dvtw1

5.3e6

1/m

Dvt2w

dvt2w

-0.032

1/V

u0

670.0 250.0

cm2/V/ sec

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DC Parameters

Symbols used in equation Ua Ub Uc

Symbols used in SPICE ua ub uc

Description First-order mobility degradation coefficient Second-order mobility degradation coefficient Body-effect of mobility degradation coefficient

Default 2.25E-9 5.87E-19 mobmod =1, 2: -4.65e-11 mobmod =3: -0.046 8.0E4 1.0 0.0 0.0 0.0 -0.047 0.0 1.0 0.0 0 0

Unit m/V (m/V)2 m/V2

Note

1/V m/sec none 1/V m m 1/V 1/V none r -mW V-1/2 1/V

sat A0 Ags B0 B1 Keta A1 A2 Rdsw Prwb Prwg

vsat a0 ags b0 b1 keta a1 a2 rdsw prwb prwg

Saturation velocity at Temp = Tnom Bulk charge effect coefficient for channel length gate bias coefficient of Abulk Bulk charge effect coefficient for channel width Bulk charge effect width offset Body-bias coefficient of bulk charge effect First non-saturation effect parameter Second non-saturation factor Parasitic resistance per unit width Body effect coefficient of Rdsw Gate bias effect coefficient of Rdsw

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DC Parameters

Symbols used in equation Wr Wint Lint dWg dWb Voff Nfactor Eta0 Etab Dsub Cit Cdsc Cdscb Cdscd Pclm

Symbols used in SPICE wr wint lint dwg dwb voff nfactor eta0 etab dsub cit cdsc cdscb cdscd pclm

Description Width Offset from Weff for Rds calculation Width offset fitting parameter from I-V without bias Length offset fitting parameter from I-V without bias Coefficient of Weffs gate dependence Coefficient of Weffs substrate body bias dependence Offset voltage in the subthreshold region at large W and L Subthreshold swing factor DIBL coefficient in subthreshold region Body-bias coefficient for the subthreshold DIBL effect DIBL coefficient exponent in subthreshold region Interface trap capacitance Drain/Source to channel coupling capacitance Body-bias sensitivity of Cdsc Drain-bias sensitivity of Cdsc Channel length modulation parameter

Default 1.0 0.0 0.0 0.0 0.0 -0.08 1.0 0.08 -0.07 drout 0.0 2.4E-4 0.0 0.0 1.3

Unit none m m m/V m/V 1/2 V none none 1/V none F/m2 F/m2 F/Vm2 F/Vm2 none

Note

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BSIM3v3 Manual Copyright 1995, UC Berkeley

DC Parameters

Symbols used in equation Pdiblc1 Pdiblc2 Pdiblcb Drout

Symbols used in SPICE pdiblc1 pdiblc2 pdiblcb drout

Description First output resistance DIBL effect correction parameter Second output resistance DIBL effect correction parameter Body effect coefficient of DIBL correction parameters L dependence coefficient of the DIBL correction parameter in Rout First substrate current bodyeffect parameter Second substrate current bodyeffect parameter Gate dependence of Early voltage Effective Vds parameter poly gate doping concentration The first parameter of impact ionization current The second parameter of impact ionization current Source drain sheet resistance in ohm per square Source drain junction saturation current per unit area

Default 0.39 0.0086 0 0.56

Unit none none 1/V none

Note

Pscbe1 Pscbe2 Pvag Ngate 0 0 Rsh Jso

pscbe1 pscbe2 pvag delta ngate alpha0 beta0 rsh js

4.24E8 1.0E-5 0.0 0.01 infinite 0 30 0.0 1.E-4

V/m V/m none V cm-3 m/V V / square A/ m2

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AC and Capacitance Parameters

A.3 AC and Capacitance Parameters

Symbols used in equation Xpart CGS0

Symbols used in SPICE xpart cgso

Description Charge partitioning rate flag Non LDD region source-gate overlap capacitance per channel length Non LDD region drain-gate overlap capacitance per channel length Gate bulk overlap capacitance per unit channel length Bottom junction per unit area Bottom junction capacitance grating coefficient Source/Drain side junction capacitance grading coefficient Source/Drain side junction capacitance per unit area Bottom built-in potential Source/Drain side junction built-in potential Light doped source-gate region overlap capacitance Light doped drain-gate region overlap capacitance Default 0 calculated Unit none F/m Note nC-1

CGD0

cgdo

calculated

F/m

nC-2

CGB0 Cj Mj Mjsw

cgbo cj mj mjsw

0.0 5e-4 0.5 0.33

F/m F/m2

none

Cjsw Pb Pbsw CGS1 CGD1

cjsw pb pbsw cgs1 cgd1

5.E-10 1.0 1.0q 0.0 0.0

F/m2 V V F/m F/m

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BSIM3v3 Manual Copyright 1995, UC Berkeley

NQS Parameters

Symbols used in equation CKAPPA

Symbols used in SPICE ckappa

Description Default Coefficient for lightly doped region overlap capacitance Fringing field capacitance fringing field capacitance Constant term for the short channel model Exponential term for the short channel model Length offset fitting parameter from C-V Width offset fitting parameter from C-V 0.6 Unit F/m Note

Cf CLC CLE DLC DWC

cf clc cle dlc dwc

calculated 0.1E-6 0.6 lint wint

F/m m none m m

nC-3

A.4 NQS Parameters

Symbols used in equation Elm

Symbols used in SPICE elm

Description Elmore constant of the channel

Default 5

Unit none

Note

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dW and dL Parameters

A.5 dW and dL Parameters

Symbols used in equation Wl Wln Ww Wwn Wwl Ll Lln Lw Lwn Lwl

Symbols used in SPICE wl wln ww wwn wwl ll lln lw lwn lwl

Description Coefficient of length dependence for width offset Power of length dependence of width offset Coefficient of width dependence for width offset Power of width dependence of width offset Coefficient of length and width cross term for width offset Coefficient of length dependence for length offset Power of length dependence for length offset Coefficient of width dependence for length offset Power of width dependence for length offset Coefficient of length and width cross term for length offset

Default 0.0 1.0 0.0 1.0 0.0 0.0 1.0 0.0 1.0 0.0

Unit mWln none mWwn none mWwn+Wln mLln none mLwn none mLwn+Lln

Note

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BSIM3v3 Manual Copyright 1995, UC Berkeley

Temperature Parameters

A.6 Temperature Parameters

Symbols used in equation Tnom

Symbols used in SPICE tnom

Description Temperature at which parameters are extracted Mobility temperature exponent Temperature coefficient for threshold voltage Channel length dependence of the temperature coefficient for threshold voltage Body-bias coefficient of Vth temperature effect Temperature coefficient for Ua Temperature coefficient for Ub Temperature coefficient for Uc

Default 27

Unit oC

Note

te Kt1 Kt1l

ute kt1 kt1l

-1.5 -0.11 0.0

none V V*m

Kt2 Ua1 Ub1 Uc1

kt2 ua1 ub1 uc1

0.022 4.31E-9 -7.61E18 mobmod=1, 2: -5.6E-11 mobmod=3: -0.056

none m/V (m/V)2 m/V2

1/V

BSIM3v3 Manual Copyright 1995, UC Berkeley

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Flicker Noise Model Parameters

Symbols used in equation At Prt

Symbols used in SPICE at prt

Description Temperature coefficient for saturation velocity Temperature coefficient for Rdsw

Default 3.3E4 0

Unit m/sec -m

Note

A.7 Flicker Noise Model Parameters

Symbols used in equation Noia Noib Noic

Symbols used in SPICE noia noib noic

Description Noise parameter A Noise parameter B Noise parameter C

Default (NMOS) 1e20 (PMOS) 9.9e18 (NMOS) 5e4 (PMOS) 2.4e3 (NMOS) -1.4e12 (PMOS) 1.4e-12 4.1e7 1 1 0

Unit none none none

Note

Em Af Ef Kf

em af ef kf

Saturation field Frequency exponent Flicker exponent for noimod=2 Flicker noise parameter for noimod=1

V/m none none none

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BSIM3v3 Manual Copyright 1995, UC Berkeley

Process Parameters

A.8 Process Parameters

Symbols used in equation Tox Xj 1 2 Nch Nsub Vbx Xt

Symbols used in SPICE tox xj gamma1 gamma2 nch nsub vbx xt

Description Gate oxide thickness Junction Depth Body-effect coefficient near the surface Body-effect coefficient in the bulk Channel doping concentration Substrate doping concentration Vbs at which the depletion region width equals xt Doping depth

Default 1.5e-8 1.5e-7 calculated calculated 1.7e17 6e16 calculated 1.55e-7

Unit m m V1/2 V1/2 1/cm3 1/cm3 V m

Note

nI-4 nI-5 nI-3

nI-6

A.9 Bin Description Parameters

Symbols used in equation Lmin Lmax

Symbols used in SPICE lmin lmax

Description Minimum channel length Maximum channel length

Default 0.0 1.0

Unit m m

Note

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Model Parameter Notes

Symbols used in equation Wmin Wmax binunit

Symbols used in SPICE wmin wmax binunit

Description Minimum channel width Maximum channel width Bin unit scale selector

Default 0.0 1.0 1

Unit

Note

m m none

A.10Model Parameter Notes


nI-1. If Vtho is not specified, it is calculated using:

Vtho = VFB + s + K1 s

where VFB=-1.0. If Vth0 is specified, VFB is calculated using

VFB = Vtho s K 1 s

nI-2. If k1 and k2 are not given, they are calculated using:

K1 = gamma2 2 K 2 s Vbm

K2 =

( gamma1 gamma2 )( s Vbx s ) 2 s ( s Vbm s ) + Vbm

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BSIM3v3 Manual Copyright 1995, UC Berkeley

Model Parameter Notes

where the parameter phi is calculated using:

Nch s = 2vt ln ni

vt =

kBT q

T ni = 145x1010 . 300.15

1.5

E g (T ) exp 215565981 . 2 vt

E g (T ) = 116 .

7.02 x10 4 T 2 T + 1108

where Eg(T) is the energy bandgap at temperature T.

nI-3. If nch is not given and gamma1 is given, nch is calculated from:

Nch =

gamma12 Cox 2 2 qsi

If both gamma1 and nch are not given, nch defaults to 1.7e23 1/m3 and gamma1 is calculated from nch. nI-4. If gamma1 is not given, it is calculated using:

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Model Parameter Notes

gamma1 =

2 q si Nch Cox

nI-5. If gamma2 is not given, it is calculated using:

gamma 2 =

2 q si N sub Cox

nI-6. If vbx is not given, it is calculated using:

Vbx = s

qNchX t 2 2 si

nC-1. If cgso is not given then it is calculated using: if (dlc is given and is greater 0) then, cgso = p1 = (dlc*cox) - cgs1 if (the previously calculated cgso <0), then cgso=0 else cgso = 0.6 xj*cox

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Model Parameter Notes

nC-2. If cgdo is not given then it is calculated using: if (dlc is given and is greater than 0) then, cgdo = p2 = (dlc*cox) - cgd1 if (the previously calculated cgdo <0), then cgdo=0 else cgdo = 0.6 xj*cox

nC-3. If cf is not given then it is calculated using:

CF =

2 ox 4 10 7 ln 1 + Tox

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Model Parameter Notes

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