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NTGS3446 Power MOSFET 20 V, 5.

1 A Single NChannel, TSOP6


Features

Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature PbFree Package is Available

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V(BR)DSS 20 V RDS(on) TYP 36 mW @ 4.5 V ID MAX 5.1 A

Applications

NChannel
Drain 1 2 5 6

Power Management in portable and batterypowered products, i.e. Lithium Ion Battery Applications Notebook PC
Rating DraintoSource Voltage GatetoSource Voltage Thermal Resistance JunctiontoAmbient (Note 1) Total Power Dissipation @ TA = 25C Drain Current Continuous @ TA = 25C Pulsed Drain Current (tp t 10 ms) Thermal Resistance JunctiontoAmbient (Note 2) Total Power Dissipation @ TA = 25C Drain Current Continuous @ TA = 25C Pulsed Drain Current (tp t 10 ms) Thermal Resistance JunctiontoAmbient (Note 3) Total Power Dissipation @ TA = 25C Drain Current Continuous @ TA = 25C Pulsed Drain Current (tp t 10 ms) Source Current (Body Diode) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes for 10 seconds

computers, printers, PCMCIA cards, cellular and cordless

MAXIMUM RATINGS (TC = 25C unless otherwise noted)


Symbol VDSS VGS RqJA Pd IDM RqJA Pd ID IDM RqJA Pd ID IDM IS TJ, Tstg TL ID Value 20 12 244 0.5 2.5 10 128 1.0 3.6 14 62.5 2.0 5.1 20 5.1 55 to 150 260 Unit V V C/W W A A C/W W A A C/W W A A A C C

Gate 3

Source 4

MARKING DIAGRAM
TSOP6 CASE 318G STYLE 1 1 446 W = Device Code = Work Week 446W

PIN ASSIGNMENT
Drain Drain Source 6 5 4

1 2 3 Drain Drain Gate

ORDERING INFORMATION
Device NTGS3446T1 NTGS3446T1G Package TSOP6 TSOP6 (PbFree) Shipping 3000/Tape & Reel 3000/Tape & Reel

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Minimum FR4 or G10PCB, operating to steady state. 2. Mounted onto a 2 square FR4 board (1 sq. 2 oz. cu. 0.06 thick singlesided), operating to steady state. 3. Mounted onto a 2 square FR4 board (1 sq. 2 oz. cu. 0.06 thick singlesided), t < 5.0 seconds.
Semiconductor Components Industries, LLC, 2006

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTGS3446/D

January, 2006 Rev. 5

NTGS3446
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 85C) GateBody Leakage Current (VGS = 12 Vdc, VDS = 0) ON CHARACTERISTICS (Note 4) Gate Threshold Voltage ID = 0.25 mA, VDS = VGS Temperature Coefficient (Negative) Static DraintoSource OnResistance (VGS = 4.5 Vdc, ID = 5.1 Adc) (VGS = 2.5 Vdc, ID = 4.4 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 5.1 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (VDS = 10 Vdc, ID = 5.1 Adc, VGS = 4.5 Vdc) SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (Note 4) (IS = 1.7 Adc, VGS = 0 Vdc) (IS = 1.7 Adc, VGS = 0 Vdc, TJ = 85C) VSD 0.74 0.66 20 11 9.0 0.01 1.1 mC Vdc (VDD = 10 Vdc, ID = 1.0 Adc, VGS = 4.5 Vdc, RG = 6.0 W) td(on) tr td(off) tf QT Qgs Qgd 9.0 12 35 20 8.0 2.0 2.0 16 20 60 35 15 nC ns (VDS = 10 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss 510 200 60 750 350 100 pF VGS(th) 0.6 0.85 2.5 36 44 12 1.2 45 55 Vdc mV/C mW V(BR)DSS 20 22 1.0 25 100 100 Vdc mV/C mAdc Symbol Min Typ Max Unit

IDSS

IGSS(f) IGSS(r)

nAdc

RDS(on)

gFS

mhos

Reverse Recovery Time (IS = 1.7 Adc, VGS = 0 Vdc, diS/dt = 100 A/ms) Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperature.

trr ta tb QRR

ns

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NTGS3446
14 12 10 8 6 4 2 0 VGS = 1.8 V VGS = 1.6 V VGS = 1.4 V 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAINTOSOURCE VOLTAGE (V) VGS = 5 V VGS = 10 V VGS = 2 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.6 V VGS = 2.2 V TJ = 25C 14 12 10 8 6 4 2 0 0 1 TJ = 125C 2 TJ = 25C TJ = 55C 3 4 5 VDS w 10 V

VGS, GATETOSOURCE VOLTAGE (V)

Figure 1. OnRegion Characteristics


RDS(on), DRAINTOSOURCE RESISTANCE (W) RDS(on), DRAINTOSOURCE RESISTANCE (W)

Figure 2. Transfer Characteristics

0.11 ID = 3.3 A TJ = 25C

0.06 0.05

TJ = 25C VGS = 2.5 V

0.085

0.04 0.03 0.02 0.01

0.06

VGS = 5.5 V

0.035

0.01

10

VGS, GATETOSOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 3. OnResistance versus GateToSource Voltage

Figure 4. OnResistance versus Drain Current and Gate Voltage

RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED)

1.6 1.4 1.2 1 0.8 0.6 ID = 3.25 A VGS = 4.5 V IDSS, LEAKAGE (nA)

1000 TJ = 150C VGS = 0 V

100

TJ = 100C 50 25 0 25 50 75 100 125 150 10 2 4 6 8 10 12 14 16 18 20

TJ, JUNCTION TEMPERATURE (C)

VDS, DRAINTOSOURCE VOLTAGE (V)

Figure 5. OnResistance Variation with Temperature

Figure 6. DraintoSource Leakage Current versus Voltage

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NTGS3446
TJ = 25C VDS, DRAINTOSOURCE VOLTAGE VDS = 0 V Ciss VGS = 0 V VGS, GATETOSOURCE VOLTAGE (V) 1400 1200 C, CAPACITANCE (pF) 1000 800 600 400 200 0 10 5.0 VGS 0 VDS 5.0 10 Coss Crss 15 Crss Ciss 5 4 3 2 1 0 Qgs Qgd
15

QT
12

VDS VGS ID = 5.1 A TJ = 25C


9

20

GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (V)

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation


1000 VDS = 10 V ID = 5.1 A VGS = 4.5 V 100 t, TIME (ns) Vf Vr 10 Vd(off) Vd(on) 6 IS, SOURCE CURRENT (A) 5 4 3 2 1 0 0.2

Figure 8. GatetoSource and DraintoSource Voltage versus Total Charge

VGS = 0 V TJ = 25C

1 1 10 RG, GATE RESISTANCE (W) 100

0.4

0.6

0.8

VSD, SOURCETODRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time Variation versus Gate Resistance

Figure 10. Diode Forward Voltage versus Current

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NTGS3446
PACKAGE DIMENSIONS
TSOP6 CASE 318G02 ISSUE N
A L
6 1 5 2 4 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS DIM MIN MAX A 2.90 3.10 B 1.30 1.70 C 0.90 1.10 D 0.25 0.50 G 0.85 1.05 H 0.013 0.100 J 0.10 0.26 K 0.20 0.60 L 1.25 1.55 M 0_ 10 _ S 2.50 3.00 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181

D G C H K J M

0.05 (0.002)

SOLDERING FOOTPRINT*
2.4 0.094

1.9 0.075

0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039

SCALE 10:1

mm inches

*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION


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NTGS3446/D