Final data

SPP11N60C2, SPB11N60C2 SPA11N60C2

Cool MOS Power Transistor

Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances
P-TO220-3-31

Product Summary VDS @ Tjmax 650 R DS(on) ID

P-TO263-3-2

V A

0.38 11

P-TO220-3-1

1 P-TO220-3-31

Type SPP11N60C2 SPB11N60C2 SPA11N60C2

Package P-TO220-3-1 P-TO263-3-2

Ordering Code Q67040-S4295 Q67040-S4298

Marking 11N60C2 11N60C2 11N60C2

P-TO220-3-31 Q67040-S4332

Maximum Ratings Parameter Symbol ID Value SPP_B SPA Unit

Continuous drain current

TC = 25 C TC = 100 C

A 11 7 111) 71) 22 340 0.6 11 6 20

30

Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse

ID =5.5A, VDD =50V

ID puls EAS EAR IAR

22 340 0.6 11 6 20
30

A mJ

Avalanche energy, repetitive tAR limited by Tjmax 2)

ID =11A, VDD =50V

Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt

IS = 11 A, VDS < VDD , di/dt=100A/s, Tjmax =150C

A V/ns V W

dv/dt
VGS VGS Ptot

Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C

125

33

Operating and storage temperature

Page 1

Tj , Tstg

-55...+150

2002-08-12

Final data Thermal Characteristics Parameter Characteristics

SPP11N60C2, SPB11N60C2 SPA11N60C2

Symbol min.

Values typ. max.

Unit

Thermal resistance, junction - case Thremal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Linear derating factor Linear derating factor, FullPAK Soldering temperature, 1.6 mm (0.063 in.) from case for 10s

RthJC RthJC_FP RthJA RthJA_FP RthJA

35 -

1 3.8 62 80 62 1 0.26 260

K/W

W/K C

Tsold

Electrical Characteristics , at Tj = 25 C, unless otherwise specified Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =0.25mA

V(BR)DSS V(BR)DS VGS(th) IDSS

600 3.5

700 4.5

5.5

Drain-source avalanche breakdown voltage

VGS =0V, ID =11A

Gate threshold voltage, VGS = VDS

ID =0.5mA

Zero gate voltage drain current

VDS = 600 V, VGS = 0 V, Tj = 25 C VDS = 600 V, VGS = 0 V, Tj = 150 C

A 0.34 0.86 25 250 100 0.38 nA

Gate-source leakage current

VGS =20V, VDS=0V

IGSS RDS(on) RG

Drain-source on-state resistance

VGS =10V, ID=7A, Tj=25C

Gate input resistance f = 1 MHz, open drain

Page 2

2002-08-12

Final data

SPP11N60C2, SPB11N60C2 SPA11N60C2

Electrical Characteristics Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD =350V, ID =11A, VGS =0 to 10V VDD =350V, ID =11A

Symbol

Conditions min.

Values typ. 6 1460 610 21 45 85 13 40 48 9

10.5 24 41.5 8

Unit max. 72 13.5

54 V nC

gfs Ciss Coss Crss

VDS 2*ID *RDS(on)max, ID =7A VGS =0V, VDS =25V, f=1MHz

3 -

S pF

Effective output capacitance, 4) Co(er)

VGS =0V, VDS =0V to 480V

td(on) tr td(off) tf

VDD =380V, VGS =0/13V, ID =11A, RG=6.8, Tj=125C

ns

V(plateau) VDD =350V, ID =11A

1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P

AV =EAR*f.

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V
o(er) oss DS

DSS .

5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .

Page 3

2002-08-12

Final data

SPP11N60C2, SPB11N60C2 SPA11N60C2

Electrical Characteristics Parameter Characteristics Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt
Tj=25C VGS =0V, IF=IS VR =350V, IF =IS , diF /dt=100A/s

Symbol

Conditions min.

Values typ. 1 650 7.9 30 600 max. 11 22 1.2 1105 -

Unit

IS ISM

TC=25C

V ns C A A/s

Typical Transient Thermal Characteristics Symbol SPP_B Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.015 0.034 0.042 0.116 0.149 0.059 Value SPA 0.015 0.03 0.043 0.119 0.35 2.499 K/W Cth1 Cth2 Cth3 Cth4 Cth5 Cth6
R th,n T case

Unit

Symbol

Value SPP_B 0.0002121 0.0007091 0.001184 0.001527 0.011 0.089 SPA 0.00012 0.000455 0.000638 0.00144 0.00737 0.412

Unit Ws/K

Tj P tot (t)

R th1

E xternal H eatsink

C th1

C th2

C th,n T am b

Page 4

2002-08-12

Final data

SPP11N60C2, SPB11N60C2 SPA11N60C2

1 Power dissipation Ptot = f (TC )

SPP11N60C2

2 Power dissiaption FullPAK Ptot = f (TC )

35

140

W
120 110 100 25

Ptot

90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120

P tot
20 15 10 5

160

0 0

20

40

60

80

100

120

TC

C 160 TC

3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC =25C

10
2

4 Safe operating area FullPAK ID = f (VDS ) parameter: D = 0, TC = 25C

10 2

10 1

10 1

ID

10 0

ID
10 0

10 -1

tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

10 -1

tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC

10 -2 0 10

10

10

10 V VDS

10 -2 0 10

10

10

10 V VDS

Page 5

2002-08-12

Final data

SPP11N60C2, SPB11N60C2 SPA11N60C2

5 Transient thermal impedance ZthJC = f (tp ) parameter: D = tp/T

10 1

6 Transient thermal impedance FullPAK ZthJC = f (tp ) parameter: D = tp/t

10 1

K/W
10 0

K/W
10 0

ZthJC

10 -1

10 -1

10 -2

10 -3

D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse

10 -2

D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse

10 -3

10 -4 -7 10

10

-6

10

-5

10

-4

10

-3

s tp

10

-1

10 -4 -7 10

10

-6

10

-5

10

-4

10

-3

10

-2

10

Helvetica tp

7 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 10 s, VGS

35
20V

8 Typ. output characteristic ID = f (VDS ); Tj=150C parameter: tp = 10 s, VGS

18

A
12V 10V

20V 12V 10V

9V 8V

14 12 10 8
7V

25

ID

20
9V

15
8V

ID
10

6 4

7V

6V

2
6V

0 0

10

15

V VDS

25

0 0

10

15

V VDS

25

Page 6

2002-08-12

Final data

SPP11N60C2, SPB11N60C2 SPA11N60C2

9 Typ. drain-source on resistance RDS(on) =f(ID ) parameter: Tj =150C, VGS

2

10 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 7 A, VGS = 10 V

2.1
SPP11N60C2

1.8

RDS(on)
1

RDS(on)

1.6 1.4 1.2

0.5

20V 12V 10V 9V 8V 7V 6V

1 0.8 0.6 98% 0.4 0.2 typ

0 0

10

12

14

A ID

18

0 -60

-20

20

60

100

180

Tj

11 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s

32

12 Typ. gate charge VGS = f (QGate) parameter: ID = 11 A pulsed

16
SPP11N60C2

24

12

0,2 VDS max

20

V GS

0,8 VDS max

ID

25 C 150 C

10

16

12

0 0

12

20

0 0

10

20

30

40

50

nC

65

VGS

QGate
Page 7

2002-08-12

Final data

SPP11N60C2, SPB11N60C2 SPA11N60C2

13 Forward characteristics of body diode IF = f (VSD ) parameter: Tj , tp = 10 s

10 2
SPP11N60C2

14 Typ. switching time t = f (ID), inductive load, Tj =125C par.: VDS=380V, VGS=0/+13V, RG =6.8
10 3

ns
tr

10 1

10 2

IF

td(off) tf

10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0

10 1
td(on)

0.4

0.8

1.2

1.6

2.4 V

10 0 0

10

15

20

A ID

30

VSD

15 Typ. switching time t = f (RG), inductive load, Tj =125C par.: VDS=380V, VGS=0/+13V, ID=11 A
10
3

16 Typ. switching losses E = f (ID ), inductive load, Tj=125C par.: VDS=380V, VGS=0/+13V, RG =6.8
0.7
*) Eon includes SDP06S60 diode commutation losses.

ns
td(off) td(on)

mWs

10 2
tr

0.5

E
0.4
tf

0.3

10 1 0.2

Eoff Eon*
0.1

10 0 0

10

20

30

40

50

RG

70

0 0

10

15

A ID

25

Page 8

2002-08-12

Final data

SPP11N60C2, SPB11N60C2 SPA11N60C2

17 Typ. switching losses E = f(RG ), inductive load, Tj =125C par.: VDS=380V, VGS=0/+13V,ID =11A
0.4
*) E on includes SDP06S60 diode commutation losses.

18 Avalanche SOA IAR = f (tAR ) par.: Tj 150 C

11

A
9 8

mWs IAR
Eoff
0.2

7 6 5 4
Tj (START) =25C

Eon*

0.1

3 2 1

Tj (START) =125C

0 0

10

20

30

40

50

RG

70

0 -3 10

10

-2

10

-1

10

10

10

4 s 10 tAR

19 Avalanche energy EAS = f (Tj ) par.: ID = 5.5 A, VDD = 50 V

350

20 Drain-source breakdown voltage V(BR)DSS = f (Tj )

SPP11N60C2

720

mJ

V (BR)DSS
C

680 660 640 620 600

250

E AS
200 150 100

580 50 560 0 20 540 -60

40

60

80

100

120

160

-20

20

60

100

180

Tj
Page 9

Tj

2002-08-12

Final data

SPP11N60C2, SPB11N60C2 SPA11N60C2

21 Avalanche power losses PAR = f (f ) parameter: EAR =0.6mJ

300

22 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz

10 4

pF W
10 3

Ciss

P AR

200

C
150 10 2

Coss

100 10 1 50

Crss

0 4 10

10

Hz f

10

10 0 0

100

200

300

400

600

VDS

23 Typ. Coss stored energy Eoss=f(VDS )

7.5

6 5.5

E oss

5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400

600

VDS

Page 10

2002-08-12

Final data

SPP11N60C2, SPB11N60C2 SPA11N60C2

Definition of diodes switching characteristics

Page 11

2002-08-12

Final data

SPP11N60C2, SPB11N60C2 SPA11N60C2

P-TO-220-3-1
B 10 0.4 3.7 0.2 A 1.270.13 4.44

15.38 0.6

2.8 0.2

5.23 0.9

13.5 0.5

3x 0.75 0.1 1.17 0.22 2x 2.54 0.25

M

0.5 0.1 2.510.2

A B C

All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3

P-TO-263-3-1 (D2-PAK)
4.4 10 0.2 0...0.3 8.5 1) A 1.27 0.1 B 0.1 2.4

1 0.3

0.05

(15)

9.25 0.2

7.55 1)

0...0.15 0.75 0.1 1.05 2.54 5.08

1)

4.7 0.5

2.7 0.3

0.5 0.1
8 MAX.

0.25

A B

0.1 B

Typical All metal surfaces: tin plated, except area of cut. Metal surface min. x=7.25, y=6.9

9.98 0.48

0.05

Page 12

2002-08-12

Final data

SPP11N60C2, SPB11N60C2 SPA11N60C2

P-TO-220-3-31 (FullPAK)

10.5 0.005 6.1 0.002 1.5 0.001 4.7 0.005 2.7 0.005
7 15.99 0.005 14.1 0.005 12.79 0.005

9.68 0.005
1 2 3

1.28 +0.003 -0.002 0.7 +0.003 -0.002 2.54 2.57 0.002

13.6 0.005

0.5 +0.005 -0.002

Please refer to mounting instructions (application note AN-TO220-3-31-01)

3.3 0.005

Page 13

2002-08-12

Final data
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Mnchen Infineon Technologies AG 1999 All Rights Reserved.

SPP11N60C2, SPB11N60C2 SPA11N60C2

Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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2002-08-12