Freescale Semiconductor Technical Data

Document Number: MRF6S18100N Rev. 1, 5/2006

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d multicarrier amplifier applications. GSM Application Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 100 Watts, Full Frequency Band (1805 - 1880 MHz or 1930- 1990 MHz) Power Gain 14.5 dB Drain Efficiency 49% GSM EDGE Application Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 40 Watts Avg., Full Frequency Band (1805 - 1880 MHz or 1930- 1990 MHz) Power Gain 15 dB Drain Efficiency 35% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 76 dBc EVM 2% rms Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications 200C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MRF6S18100NR1 MRF6S18100NBR1
1805- 1990 MHz, 100 W, 28 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs

CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 MRF6S18100NR1

CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 MRF6S18100NBR1

Table 1. Maximum Ratings

Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +68 - 0.5, +12 343 1.96 - 65 to +175 200 Unit Vdc Vdc W W/C C C

Table 2. Thermal Characteristics

Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 100 CW Case Temperature 77C, 40 CW Symbol RJC Value(1,2) 0.51 0.62 Unit C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.

Freescale Semiconductor, Inc., 2006. All rights reserved.

MRF6S18100NR1 MRF6S18100NBR1 1

RF Device Data Freescale Semiconductor

Table 3. ESD Protection Characteristics

Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C

Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)

Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 330 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 900 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3.3 Adc) Dynamic Characteristics(1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point 1. Part internally matched both on input and output. (continued) Crss 1.5 pF VGS(th) VGS(Q) VDS(on) gfs 1.6 1.5 2 2.8 0.24 5.3 3 3.5 Vdc Vdc Vdc S IDSS IDSS IGSS 10 1 500 Adc Adc nAdc Symbol Min Typ Max Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 100 W, IDQ = 900 mA, f = 1930- 1990 MHz Gps D IRL P1dB 13 47 100 14.5 49 - 12 110 16 -9 dB % dB W

MRF6S18100NR1 MRF6S18100NBR1 2 RF Device Data Freescale Semiconductor

Table 5. Electrical Characteristics (TC = 25C unless otherwise noted (continued)

Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 hm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 40 W Avg., 1805- 1880 MHz or 1930 - 1990 MHz EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps D EVM SR1 SR2 15 35 2 - 63 - 76 dB % % rms dBc dBc

Typical CW Performances (In Freescale GSM Test Fixture, 50 hm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W, 1805- 1880 MHz Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point Gps D IRL P1dB 14.5 49 - 12 110 dB % dB W

MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 3

R1 VBIAS + R2 C1 C2 Z6 Z13 RF INPUT R3 Z1 C6 C7 C8 Z2 Z3 Z4 Z5 Z7 Z8 Z9 Z10 Z11 C10 Z12 RF OUTPUT C3 C4 C5 C14 VSUPPLY

DUT Z14

C9

VSUPPLY C11 C12 C13

Z1, Z12 Z2* Z3* Z4* Z5 Z6 Z7, Z8

0.250 x 0.083 Microstrip 0.450 x 0.083 Microstrip 0.535 x 0.083 Microstrip 0.540 x 0.083 Microstrip 0.365 x 1.000 Microstrip 1.190 x 0.080 Microstrip 0.115 x 1.000 Microstrip

Z9 Z10* Z11* Z13, Z14 PCB

0.485 x 1.000 Microstrip 0.590 x 0.083 Microstrip 0.805 x 0.083 Microstrip 0.870 x 0.080 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55

*Variable for tuning.

Figure 1. MRF6S18100NR1(NBR1) Test Circuit Schematic 1930 - 1990 MHz Table 6. MRF6S18100NR1(NBR1) Test Circuit Component Designations and Values 1930 - 1990 MHz
Part C1 C2, C3, C6, C10, C11 C4, C5, C12, C13 C7 C8 C9 C14 R1, R2 R3 Description 100 nF Chip Capacitor (1206) 6.8 pF 600B Chip Capacitors 4.7 F Chip Capacitors (1812) 0.3 pF 700B Chip Capacitor 1.3 pF 600B Chip Capacitor 0.5 pF 600B Chip Capacitor 470 F, 63 V Electrolytic Capacitor, Radial 10 k, 1/4 W Chip Resistors (1206) 10 , 1/4 W Chip Resistor (1206) Part Number 1206C104KAT 600B6R8BW C4532X5R1H475MT 700B0R3BW 600B1R3BW 600B0R5BW 13661471 Manufacturer AVX ATC TDK ATC ATC ATC Philips

MRF6S18100NR1 MRF6S18100NBR1 4 RF Device Data Freescale Semiconductor

C14

R1 R2 C1 C2 C3

C4 C5

R3

C6 C7 C8 CUT OUT AREA C10 C9

C11

C12 C13

MRF6S18100N Rev. 0

Figure 2. MRF6S18100NR1(NBR1) Test Circuit Component Layout 1930 - 1990 MHz

MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 5

TYPICAL CHARACTERISTICS 1930 - 1990 MHz

17 D D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 16 IRL 15 Gps 14 VDD = 28 Vdc IDQ = 900 mA 13 1900 1920 1940 1960 1980 2000 20 2020 40 30 40 50 10 60 0 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB)

20

30

f, FREQUENCY (MHz)

Figure 3. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 100 Watts

17

60

D, DRAIN EFFICIENCY (%)

Gps, POWER GAIN (dB)

16 IRL 15 Gps 14 D VDD = 28 Vdc IDQ = 900 mA 13 1900 1920 1940 1960 1980 2000

50

10

40

20

30

30

20 2020

40

f, FREQUENCY (MHz)

Figure 4. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 40 Watts

16

IDQ = 1350 mA Gps, POWER GAIN (dB) 1125 mA 900 mA

16 14

15 Gps, POWER GAIN (dB)

12 10

32 V 28 V

14 665 mA 13 450 mA 12 VDD = 28 Vdc f = 1960 MHz 11 1 10 Pout, OUTPUT POWER (WATTS) 100

8 6 VDD = 12 V 4 2 0 20 40 60 80 20 V 100 120 24 V 16 V IDQ = 900 mA f = 1960 MHz 140 160

Pout, OUTPUT POWER (WATTS) CW

Figure 5. Power Gain versus Output Power

Figure 6. Power Gain versus Output Power

MRF6S18100NR1 MRF6S18100NBR1 6 RF Device Data Freescale Semiconductor

TYPICAL CHARACTERISTICS 1930 - 1990 MHz

EVM, ERROR VECTOR MAGNITUDE (% rms) VDD = 28 Vdc IDQ = 900 mA f = 1960 MHz Gps 30_C 25_C 85_C 12 10 8 1 10 Pout, OUTPUT POWER (WATTS) CW 100 20 10 0 5 TC = 30_C D 25_C 50 85_C 40 30 D, DRAIN EFFICIENCY (%) VDD = 28 Vdc IDQ = 700 mA 4 Pout = 61 W Avg.

18 Gps, POWER GAIN (dB) 16 14

3 44 W Avg. 2 20 W Avg.

0 1920 1940 1960 1980 2000 f, FREQUENCY (MHz)

Figure 7. Power Gain and Drain Efficiency versus CW Output Power

SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)

Figure 8. EVM versus Frequency

12 EVM, ERROR VECTOR MAGNITUDE (% rms) 10 8 6 4 2 0 1

D, DRAIN EFFICIENCY (%)

VDD = 28 Vdc IDQ = 700 mA f = 1960 MHz EDGE Modulation

60 TC = 30_C 50 40 25_C 30 20 10 0 100

50 55 60 65

SR @ 400 kHz Pout = 61 W Avg.

44 W Avg.

20 W Avg. 70 75 80 85 1900 44 W Avg. 1920 1940 1960 20 W Avg. 1980 SR @ 600 kHz 61 W Avg.

85_C EVM

VDD = 28 Vdc IDQ = 700 mA f = 1960 MHz EDGE Modulation

10 Pout, OUTPUT POWER (WATTS) AVG.

2000

2020

f, FREQUENCY (MHz)

Figure 9. EVM and Drain Efficiency versus Output Power

Figure 10. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency

40 SPECTRAL REGROWTH @ 400 kHz (dBc) 45 50 25_C 55 60 65 70 75 0 20 40 60 80 100 Pout, OUTPUT POWER (WATTS) TC = 30_C SPECTRAL REGROWTH @ 600 kHz (dBc) VDD = 28 Vdc, IDQ = 700 mA f = 1960 MHz, EDGE Modulation 85_C

55 60 65 25_C 70 75 80 85 0 20 40 60 80 100 Pout, OUTPUT POWER (WATTS) VDD = 28 Vdc, IDQ = 700 mA f = 1960 MHz, EDGE Modulation TC = 30_C 85_C

Figure 11. Spectral Regrowth at 400 kHz versus Output Power

Figure 12. Spectral Regrowth at 600 kHz versus Output Power MRF6S18100NR1 MRF6S18100NBR1

RF Device Data Freescale Semiconductor

TYPICAL CHARACTERISTICS
1.E+09 MTTF FACTOR (HOURS X AMPS2)

1.E+08

1.E+07

1.E+06 90

100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.

Figure 13. MTTF Factor versus Junction Temperature

GSM TEST SIGNAL

10 20 30 40 50 (dB) 60 70 80 90 100 110 Center 1.96 GHz 200 kHz Span 2 MHz 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz

Figure 14. EDGE Spectrum

MRF6S18100NR1 MRF6S18100NBR1 8 RF Device Data Freescale Semiconductor

Zo = 5

f = 2020 MHz f = 2020 MHz Zload

Zsource f = 1900 MHz

f = 1900 MHz

VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W f MHz 1900 1930 1960 1990 2020 Zsource W 2.80 - j4.53 2.71 - j4.27 2.63 - j4.03 2.56 - j3.79 2.51 - j3.57 Zload W 1.75 - j3.52 1.67 - j3.25 1.59 - j2.99 1.52 - j2.74 1.47 - j2.51

Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.

Input Matching Network

Device Under Test

Output Matching Network

source

load

Figure 15. Series Equivalent Source and Load Impedance 1930 - 1990 MHz

MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 9

R1 VBIAS + R2 C1 C2 Z6 Z14 RF INPUT R3 Z1 C6 C7 C8 C9 Z2 Z3 Z4 Z5 Z7 Z8 Z9 Z10 Z11 Z12 C13 Z13 RF OUTPUT C3 C4 C5 C17 VSUPPLY

DUT Z15

C10

C11

C12

VSUPPLY C14 C15 C16

Z1, Z13 Z2* Z3* Z4* Z5 Z6 Z7, Z8

0.250 x 0.083 Microstrip 0.620 x 0.083 Microstrip 0.715 x 0.083 Microstrip 0.190 x 0.083 Microstrip 0.365 x 1.000 Microstrip 1.190 x 0.080 Microstrip 0.115 x 1.000 Microstrip

Z9 Z10* Z11* Z12* Z14, Z15 PCB

0.485 x 1.000 Microstrip 0.080 x 0.083 Microstrip 0.340 x 0.083 Microstrip 0.975 x 0.083 Microstrip 0.960 x 0.080 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55

*Variable for tuning.

Figure 16. MRF6S18100NR1(NBR1) Test Circuit Schematic 1805 - 1880 MHz Table 7. MRF6S18100NR1(NBR1) Test Circuit Component Designations and Values 1805 - 1880 MHz
Part C1 C2, C3, C6, C13, C14 C4, C5, C15, C16 C7, C8, C11, C12 C9 C10 C17 R1, R2 R3 Description 100 nF Chip Capacitor (1206) 8.2 pF 600B Chip Capacitors 4.7 F Chip Capacitors (1812) 0.2 pF 700B Chip Capacitors 1 pF 600B Chip Capacitor 0.5 pF 600B Chip Capacitor 470 F, 63 V Electrolytic Capacitor, Radial 10 k, 1/4 W Chip Resistor (1206) 10 , 1/4 W Chip Resistor (1206) Part Number 1206C104KAT 600B8R2BW C4532X5R1H475MT 700B0R2BW 600B1R0BW 600B0R5BW 13661471 Manufacturer AVX ATC TDK ATC ATC ATC Philips

MRF6S18100NR1 MRF6S18100NBR1 10 RF Device Data Freescale Semiconductor

C17

R1 R2 C1 C2 C3 C4 C5

R3

C6 CUT OUT AREA C7 C8 C9

C10 C13 C11 C12

C14

C15 C16

MRF6S18100N Rev. 0

Figure 17. MRF6S18100NR1(NBR1) Test Circuit Component Layout 1805 - 1880 MHz

MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 11

TYPICAL CHARACTERISTICS 1805 - 1880 MHz

17 D 16 Gps, POWER GAIN (dB) 50 D, DRAIN EFFICIENCY (%) 0 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 60

15

Gps

40

10

14

IRL

30

20

13 VDD = 28 Vdc IDQ = 900 mA 12 1800 1810 1820 1830 1840 1850 1860 1870

20 10 1880

30

40

f, FREQUENCY (MHz)

Figure 18. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 100 Watts

16

IRL Gps

50

10

15 D

40

D, DRAIN EFFICIENCY (%)

Gps, POWER GAIN (dB)

20

14 VDD = 28 Vdc IDQ = 900 mA 13 1800 1810 1820 1830 1840 1850 1860

30

30

20 1870 1880

40

f, FREQUENCY (MHz)

Figure 19. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 40 Watts

6 EVM, ERROR VECTOR MAGNITUDE (% rms) EVM, ERROR VECTOR MAGNITUDE (% rms) VDD = 28 Vdc IDQ = 700 mA 5 Pout = 60 W Avg. 4

10 VDD = 28 Vdc IDQ = 700 mA f = 1840 MHz EDGE Modulation

50

6 D 4 TC = 25_C

30

3 42 W Avg. 2 25 W Avg. 1820 1840 1860 1880 1900

20

2 0 1 10

EVM

10 0 100

1 1800

f, FREQUENCY (MHz)

Pout, OUTPUT POWER (WATTS) AVG.

Figure 20. EVM versus Frequency

Figure 21. EVM and Drain Efficiency versus Output Power

MRF6S18100NR1 MRF6S18100NBR1 12 RF Device Data Freescale Semiconductor

D, DRAIN EFFICIENCY (%)

40

TYPICAL CHARACTERISTICS 1805 - 1880 MHZ

SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)

45 50 55 60 65 70 75 80 85 1780 25 W Avg. 1800 1820 1840 1860 1880 1900 1920 SR @ 600 kHz 25 W Avg. 60 W Avg. 42 W Avg. VDD = 28 Vdc IDQ = 700 mA f = 1960 MHz SR @ 400 kHz Pout = 60 W Avg.

42 W Avg.

f, FREQUENCY (MHz)

Figure 22. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency

45 SPECTRAL REGROWTH @ 400 kHz (dBc) 50 55 60 65 70 75 0 20 40 60 80 Pout, OUTPUT POWER (WATTS) TC = 25_C SPECTRAL REGROWTH @ 600 kHz (dBc) VDD = 28 Vdc, IDQ = 700 mA f = 1840 MHz, EDGE Modulation

60 VDD = 28 Vdc, IDQ = 700 mA f = 1840 MHz, EDGE Modulation 65

70 TC = 25_C

75

80 85 0 20 40 60 80 Pout, OUTPUT POWER (WATTS)

Figure 23. Spectral Regrowth at 400 kHz versus Output Power

Figure 24. Spectral Regrowth at 600 kHz versus Output Power

MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 13

Zo = 5

f = 1900 MHz

Zload f = 1780 MHz

f = 1900 MHz Zsource f = 1780 MHz

VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W f MHz 1780 1804 1840 1880 1900 Zsource W 1.96 - j4.09 1.90 - j3.86 1.82 - j3.53 1.76 - j3.16 1.72 - j2.97 Zload W 1.94 - j2.90 1.88 - j2.67 1.80 - j2.42 1.73 - j1.99 1.70 - j1.82

Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.

Input Matching Network

Device Under Test

Output Matching Network

source

load

Figure 25. Series Equivalent Source and Load Impedance 1805 - 1880 MHz

MRF6S18100NR1 MRF6S18100NBR1 14 RF Device Data Freescale Semiconductor

NOTES

MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 15

PACKAGE DIMENSIONS
B E1 E3
2X

GATE LEAD

DRAIN LEAD

D1
4X

D e

4X

aaa

b1 C A

D2 c1 H
DATUM PLANE ZONE J

2X

2X

A1 A2 E2 E5 E4
2X

NOTE 7

SEATING PLANE

D3
3

E5 BOTTOM VIEW

PIN 5

NOTE 8

NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M1994. 3. DATUM PLANE H IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS D" AND E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS D" AND E1" DO INCLUDE MOLD MISMATCH AND ARE DETER MINED AT DATUM PLANE H. 5. DIMENSION b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS A AND B TO BE DETERMINED AT DATUM PLANE H. 7. DIMENSION A2 APPLIES WITHIN ZONE J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 .551 .559 .353 .357 .132 .140 .124 .132 .270 .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10

DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa

STYLE 1: PIN 1. 2. 3. 4. 5.

CASE 1486 - 03 ISSUE C TO - 270 WB - 4 MRF6S18100NR1

MRF6S18100NR1 MRF6S18100NBR1 16 RF Device Data Freescale Semiconductor

MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 17

MRF6S18100NR1 MRF6S18100NBR1 18 RF Device Data Freescale Semiconductor

MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 19

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MRF6S18100NR1 MRF6S18100NBR1
Rev. 1, 5/2006 20 Document Number: MRF6S18100N

RF Device Data Freescale Semiconductor