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Transistor Layers
UKM
Objectives
Identify process problems - save $ Pass/fail criteria - should wafers continue processing? Data Collection - asses process trends Special Tests - asses specific process parameters Wafer level reliability - as needed to assure reliability concerns of process conditions
Wafer Sort
Objectives of Wafer Sort
chip functionality - verify operation of all chip functions chip sorting - sort good chips based on their operating speed performance fab yield response - provide yield information to asses and improve overall fab process performance test coverage - achieve high test coverage of internal device nodes at lowest cost
Environmental Tests
Thermal Shock tests consist of placing the device into high temperature environments and then quickly moving them into a cold environment. Mechanical Shock tests determine the ability of the device to withstand physical impacts. Pressure Cooker tests expose the device to high temperature and higher pressures (two atmospheres) to determine the ability to withstand galvanic corrosion due to the encapsulating materials. Humidity tests expose the device to higher temperature and humidity when powered. This test measures the effects of corrosion.
Dr. Nowshad Amin UKM
What is Resistivity?
A measure of the resistance to current flow in a material. A function of the attraction between the outer electrons and inner protons of a material. The more tightly bound the electrons, the greater the resistivity.
Resistivity Measurements
Relationship of Resistance (R) to Resistivity (p) and Dimensions:
R = p L/A = p L / WxD
Units of Measurements:
Resistance (R): Resistivity (p ): x cm
Four-Point Probe
An instrument used to measure resistivity on wafers and crystals. It can also be used to measure the resistivity of thin layers of dopants added into the wafer surface during the dopant processes. Has four thin metal probes arrayed in a line. (Two outside probes are connected to a power supply and two inside probes that are connected to a voltage meter.)
p=
2 s V/I
Rs = 4.53 V/I
4.53 is a constant that arises from the probe spacing.
SIMS
What is it? (secondary ion mass spectrometry)
A combination of ion milling and secondary ion detection methods. Ions are directed at the sample surface., removing a thin layer. Secondary ions are generated from the removed material, which contains the wafers material and dopant atoms.
Depth Profile
Test is done after doping to prepare for bevel technique. Depth is measured by two-point probes down the bevel. Vertical drop of the probes are recorded and a resistance measurement is made. Resistance value changes w/ the change in dopants at each level.
Test Equipment
Probe Machine
Has the capability of positioning needlelike probes on the devices Switch box (to apply the correct voltage) current polarities
Specimen = Via hole in semiconductor material Original Magnification = 40.00 kX Accelerating Voltage = 1.91kV
Specimen = Cross section of a semiconductor device Original Magnification = 50.00kX Accelerating Voltage = 0.40kV
Internet Links
For more info about Wafer Testing, please feel free to visit these websites:
http://www.icprobotics.com http://www.jemam.com http://www.jeol.com http://entcweb.tamu.edu/zoghi/semiprog/linker.htm http://www.cea.com/cai/simstheo/caistheo/htm