Dealing With IGBT Modules

Dealing with IGBT Modules

Motivation Low inductive DC-link design Choice of right Snubber Gate Clamping Thermal management Paralleling Application of driver circuit Paralleling Low inductive AC-Terminal connection Usage of single switch GA type modules Conclusion
Table of Contents
2

Table of Contents
3
vCE(t) i C(t)
VCC IO
pv (t)
iC
vCE
p
E
v C i
=
t2
CE
dt t v p t1
0 t1 t2
( )
switch
Dependence of VCE, IC, Pv, Eswitch

4
vCE(t) i C(t) VCC

IO
Increased switching speed, decreases the switching losses Eswitch But, leads to increased di/dt and therewith to higher over voltages =
v
vCE(t) i C(t) VCC
IO
di dt
stray
di/dt
0
pv (t)
pv (t)
Eswitch
0 t1 t2 t 0 t1 t2
Eswitch
t
Influence of switching speeds

5
Would you use Porsche Diesel - 1960 these different vehicles with the same driver and in the same environment?
Porsche 911 - 2004
Motivation
6

Table of Contents
7
Why low inductive DC-link design?

Due to stray inductances in the DC link, voltage overshoots occur during switch off of the IGBT:
vovershoot
di = Lstray dt
These voltage overshoots may destroy the IGBT module because they are added to the DC-link voltage and may lead to VCE > VCEmax
vCE = vovershoot + vDC link

With low inductive DC-Link design (small Lstray) these voltage overshoots can be reduced significantly.
Motivation
8
The comparison of stray inductances show

Inside the module SEMIKRON reduced the inductances significantly
Lstray = 20 nH
Outside the module the reduction of stray inductances is necessary, too
Lstray = 100 nH
Low Inductance DC-link Design

9
The mechanical design has a significant influence on the stray inductance of the DC-link
The conductors must be paralleled
Lstray = 100 %
loop
1 cm 10 nH
Lstray < 20 %

10
The connections must be in line with the main current flow
Lstray = 100 % remaining loop
Lstray = 30 %

11
Also the orientation must be taken into regard
Lstray = 100 %
+ + -
Lstray = 80 %

12
Simulation of current distribution for the case of Lstray = 80 % +

bus bar
bus bar

13
A paralleling of the capacitors reduces the inductance further
Lstray = 100 %
Lstray = 50 %

14
For paralleling standard modules a minimum requirement is DC-link design with two paralleled bars

15

16
Paralleled half bridge IGBT modules
+
~ +
17
Fan
DC-link
Driver
Snubber Capacitor 3x 2 x IGBT parallel
Apple
Heat Sink
SEMIKRON 3 Phase and Low Inductance Inverter

18
Comparison of different designs

Two capacitors in series Two serial capacitors in parallel Typical solution 2 IGBT Moduls loop Low inductive solution 2 IGBT Moduls
+ + + --+ + -
+ + + -
+ + + -
+ parallel current paths
Capacitor
Capacitor

19
Also the capacitors have to be decided

Capacitors with different internal stray inductance are available Choose a capacitor with very low stray inductance! Further: low ESR Equivalent Series Resistance High IR Ripple Current Capability
Lstray = ? Ask your supplier!
Low Inductance DC-link Capacitors

20

Table of Contents
21
Why use a snubber?

Due to stray inductances in the DC link, voltage overshoots occur during switch off of the IGBT:
vovershoot
di = Lstray dt
These voltage overshoots may destroy the IGBT module because they are added to the DC-link voltage and may lead to VCE > VCEmax
vCE = vovershoot + vDC link

The snubber works as a low pass filter and takes over the voltage overshoot (caused by the energy which is stored in the stray inductances)
Motivation
22
Different snubber networks are in use

a) b) c) d)
Snubber Networks
23
SEMIKRON recommends for IGBT applications:

Fast and high voltage film capacitor (MKP / MFP) as snubber parallel to the DC terminals
DC-link
Snubber
Not to increase Lstray, the snubber must be located directly at terminals of the IGBT module
Snubber Networks
24
But still: the snubber networks need to be optimised

The wrong snubber does not reduce the voltage overshoots Together with the stray inductance of the DC-link oscillations can occur
IGBT switch off (raise of VCE ) before optimisation Voltage overshoot Oscillation
Not Sufficient Snubber Capacitors

25
Influence of DC-link stray inductance and snubber capacitor stray inductance

V L d t C 1d i d V C i d t
IGBT-switch-of f .xls
r e b b u n s y a r t s
VCE
r e b b u n s y a r t s
V1 VDC
V2
2C
L =
22
s u b C D y a r t s
r e b b u n s
22
C C 2 i
r e b b u n s
s u b C D y a r t s
0 0
iC = operating current diC/dt = turn off
Determination of a snubber capacitor

26
These capacitors did not work satisfactory as snubber:
Not Sufficient Snubber Capacitors

27
From different suppliers different snubber capacitors are available. In a trial and error process the optimum can be find, based on measurements. The different snubber capacitors have different stray inductance values. Again it is necessary to find one with lowest inductance.
better good
Available Snubber Capacitors

28
After introduction of optimised snubber capacitor:

Significantly reduced voltage overshoots No oscillations
IGBT switch off (raise of VCE ) after optimisation Voltage overshoot No oscillation
Optimal Snubber Capacitor

29

Table of Contents
30
Over voltages at the gate VGE > +/- 20 V can occur due to
Induction at stray inductances Burst impulses by EMC
-20 V VGE +20 V
The introduction of an additional gate clamping is necessary

Close to the gate terminals, what means 5 cm Use twisted pair wiring
Gate Clamping
31
Gate clamping with RGE from gate to emitter potential

Keeps gate potential always on defined level also when supply voltage of the driver drops Prevents charging of the gate, for highly resistive driver outputs Only RGE is not sufficient for gate clamping. (See the following charts.)
VGE
Gate Clamping
32
Gate clamping with Schottky Diode from gate to supply voltage of driver
On driver board (distance to module 5 cm, twisted pair wires) Additional RGE is recommended
V+ supply
VGE
Gate Clamping
33
Gate clamping with Zener Diode or Avalanche Diode from gate to emitter potential
On driver board (distance to module 5 cm, twisted pair wires) Or on auxiliary PCB Parallel RGE is recommended
VGE
Gate Clamping
34
Auxiliary PCB directly at the IGBT module

The additional RGE ensures off-state of IGBT in case of failed wiring
Z-diode RGE RGoff RGon
Gate Clamping
35

Table of Contents
36
Taking thermal management into regard

No space between the paralleled modules lead to low stray inductances and minimum space But the thermal stacking makes a current derating necessary
Thermal Management
37
20 30 mm space between the modules

increase the inductances but reduces the thermal resistance to the heat sink significantly
Optimised thermal management leads to maximum possible current ratings
Thermal Management
38

Table of Contents
39
Different IGBT modules with different

Switching speeds ton and toff Gate thershold voltages VGE(th) Gate charge characteristic VGE = f(QG) and Miller Capacity Cres Transfer characteristic IC = f(VGE)
G AE
VGE
VGE
VGE
Due to hard connected gates, all IGBTs must have the same VGE This means: all IGBTs do not switch independently from each other
Worst Case: All Contacts Shorted

40
Hard connected Gates

All IGBTs have different gate threshold voltages VGE(th) IGBT1, with the lowest VGE(th) turns on first. The gate voltage is clamped to the Miller-Plateau. Therefore IGBTs with higher VGE(th) can not turn on. They turn on only after t1. The IGBT1 with low VGE(th) takes all the current and switching losses during turn on. On going process by negative thermal coefficient of VGE(th) VGE
VGE(th)
t t1 1 t1 n
Hard Connected Gate with Common Resistor

41
Separated by gate resistors

The gate voltage of each IGBT can rise independent from the other one. Note: The gate resistors must be tolerated < 1 %
G AE
VGE 1 VGE 2 VGE n
With individual gate resistors all IGBTs are independent from each other
Introduction of Gate Resistors

42
Separated by gate resistors

All IGBTs still have different gate threshold voltages VGE(th) But: The gate voltage of each IGBT can rise independently from the other ones. The higher Miller-Plateau will be reached after a short time t1. Only small differences in current sharing and switching losses between paralleled IGBTs.
VGE
VGE(th)
t1 t2
Introduction of Gate Resistors

43
Taking stray inductances into regard

Due to hard connected gates and varying transfer characteristics, all IGBTs have different switching times and speeds; dix/dt varies in each leg The circuit also has different stray inductances; Lx Therewith vx = Lx x dix/dt varies in each leg (e.g.: 1000 A/s x 10 nH = 10 V) Nearly unlimited equalising currents i flow also via the thin connecting wires Oscillations between parasitic capacitances (semiconductors) and inductances are not damped.
G AE
V1 i= V2 Vn E
Worst Case: All Contacts Shorted

44
The introduction of REx ( 10 % of RGx but min. 0,5 ) leads to

Limitation of equalising currents i 10 A Damping of oscillations
G
RE1 RE2 REn
AE
V1 i 10 A V2 Vn
Introduction of Auxiliary Emitter Resistors

45
The introduction of REx leads also to a negative feedback:

The equalising current i leads to a voltage drop VREx at the Emitter resistors REx
fast IGBT
slow IGBT
G AE
VRE1 i VRE2

46
The introduction of REx leads also to a negative feedback:

The voltage drop VRE1 reduces the gate voltage of the fast IGBT and decreases therewith its switching speed. The voltage drop VRE2 increases the gate voltage of the slow IGBT and makes it faster. During switch off: vice versa. fast IGBT slow IGBT
G
VRE1 VRE2 i
AE E

47
The introduction of Shottky-Diodes parallel to REx

helps to balance the emitter voltage during short circuit case. Dimensioning 100V, 1A.
This circuit is patented by SEMIKRON, but SEMIKRON customers are allowed to use it together with SEMIKRON power semiconductor modules.
Additional Proposals
48
The introduction of clamping diodes

prevents over voltages at the gate contacts. Therefore these clamping diodes must be placed very close to the module connectors
C
AE E
Additional Proposals
49
Balanced switching behaviour

Independent switching due to introduction of RGx Balanced switching speeds due to negative feedback be introduction of REx
Limitation of equalising currents Damping of oscillations Prevention of gate over voltages Refer also to SEMIKRON Application Manual - Power Modules
German English Chinese Korean Japanese Russian (on internet only)
Conclusion
50
PCB for paralleling IGBT close to the module connectors Same track length on the board Short, twisted pair wires from the board to the modules ( 5 cm)
RGon RGoff
RE
RGon RGoff
RE
RE
RGoff RGon
RE
RGoff RGon
Additional Parallel Board

51
Top
Bot
IGBT Driver Additional Parallel Board

52
Auxiliary PCB directly at the IGBT module

The additional RGE ensures off-state of IGBT in case of failed wiring Same track length on the board Short, twisted pair wires from the main driver to the auxiliary PCB at the IGBT module
Z-diode RGE RE RGoff R E RGon
Auxiliary Printed Circuit Board

53

Table of Contents
54
Why symmetrical AC terminal connection for paralleled IGBTs?

When the connection between the AC terminals have high inductance and different inductances, the current sharing of IC (output current) will be inhomogeneous and oscillations may occur. This would make a current derating necessary.
200.0
Simulation of 4 paralleled IGBT modules with inhomogeneous current sharing leads to oscillations
IC
150.0 100.0 50.0 0 -50.0 0 10.00u 20.00u 30.00u 40.00u 50.00u t
Motivation
55
Why symmetrical AC terminal connection for paralleled IGBTs?

The sketch shows that Lstray,DC and Lstray,AC are connected in series This makes clear why both have to be reduced and both have to be symmetric in each leg to ensure even current distribution to avoid oscillations
G E
Symmetrical AC Connection
56
AC link design
Short connections with identical current path length for each module Wide and thick bars Flexible interconnections for large systems might be necessary to compensate differences in thermal expansion Long hole drillings' can compensate mechanical tolerances
Isolated supporting poles take over vibrations and forces from heavy AC cables
Look for a symmetric AC-connection so that the current sharing will be even over all modules
Symmetrical AC Connection
57

Table of Contents
58
Optimisation problem
In order to optimise the thermal management it seems to be be useful splitting the current of one half bridge topology into two modules. The question is: what is better use two paralleled half bridges, or two single switches in series connection? 1
2 1
~ 59
2 2
Motivation
How to parallel half bridge IGBT modules
+
1 1 1 3 3
Paralleling of GB modules
60
+
1
How to use single switch IGBT modules as half bridge
+
1
2 1
~
2 1
~
61
Paralleling of GA modules
vCE(t) i C(t) VCC

IO
Increased switching speed, decreases the switching losses Eswitch But, leads to increased di/dt and therewith to higher over voltages =
di dt
stray L
vCE(t) i C(t) VCC

IO
di/dt
0
pv (t)
pv (t)
Eswitch
0 t1 t2 t 0 t1 t2
Eswitch
t
Influence of switching speeds

62
Comparison
For GB modules the diodes for commutation are placed in the same module. Therewith the stray inductance is as low as possible. Paralleled GB modules allow higher switching speeds
+
1 1 3 3
+
1 2
~
2 1
~
63
GA or GB?
Comparison
In half bridge modules the snubber capacitors can be placed closed to the terminals with short - and therewith low inductive connections. So that the snubbers work very efficient. Paralleled GB modules allow higher switching speeds
GA or GB?
64
Advantages of paralleled half bridges

The current per module is only 50 % of the maximum current The di/dt is much reduced, therewith the voltage overshoot is small (v = - L x di/dt) The half bridge module has much lower stray inductances, what reduces the voltage overshoot again Snubber capacitors can be placed very close to the terminals, so that they work very efficient The switching speed can be increased and therewith the switching losses are reduced
SEMIKRON recommends the use of paralleled half bridge modules instead of single switch modules
Conclusion
65
SEMIKRONs recommended solution

66

Table of Contents
67

When using latest generations of IGBT modules it is recommended and advantageous to
Do a low inductive (sandwich) DC-link design Decide for low inductive DC-link capacitors Optimise the snubber capacitors Optimise thermal management which leads to maximum possible current ratings
Conclusion
68

For paralleled modules
The driver must be powerful enough Some additional components are necessary (e.g. REx) and must be located close to every single module The DC- and AC connection must be symmetric and low inductive
Conclusion
69
Thank you very much for your attention
Refer also to SEMIKRON Application Manual - Power Modules
70
Document status:
preliminary
Date of publication: Revision: Prepared by:
2006-04-04 1.3 Christian Daucher With assistance from Dr. Arendt Wintrich Norbert Pluschke
Information furnished in this document is believed to be accurate and reliable. However, no representation or warranty is given and no liability is assumed with respect to the accuracy or use of such information. Furthermore, this technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Specifications mentioned in this document are subject to change without notice. This document supersedes and replaces all information previously supplied and may be supersede by updates.
71
IGBT modules are ESD sensitive devices.

Thus they will delivered with a short circuit connection between gate terminal and auxiliary emitter terminal
Remove this connection and handle the modules only when it is assured, that the environment is ESD proof
Additional
72

Dealing With IGBT Modules

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Dealing with IGBT Modules