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Ordering number:ENN5404B

N-Channel Silicon MOSFET

2SK2624LS
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance. Low Qg.

Package Dimensions
unit:mm 2078B
[2SK2624LS]
10.0
3.5

4.5

2.8

3.2

7.2 16.0

16.1

0.9 1.2
14.0

3.6

0.7

0.75 1 2 3

Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW10s, duty cycle1% Tc=25C

2.55

2.55

Conditions

2.4

0.6

1.2

1 : Gate 2 : Drain 3 : Source SANYO : TO220FI-LS

Ratings 600 30 3 12 2.0 25 150 55 to +150

Unit V V A A W W C
C

Electrical Characteristics at Ta = 25C


Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss ID=1mA, VGS=0 VDS=600V, VGS=0 VGS=30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.8A VGS=15V, ID=1.8A VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz 3.5 1.0 2.0 2.0 550 165 85 2.6 Conditions Ratings min 600 1.0 100 5.5 typ max Unit V mA nA V S pF pF pF

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company


TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2000TS (KOTO) TA-2884 No.54041/4

2SK2624LS
Continued from preceding page.
Parameter Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol Qg td(on) tr td(off) tf VSD Conditions VDS=200V, VGS=10V, ID=3A See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit IS=3A, VGS=0 Ratings min typ 15 17 17 40 22 0.98 1.2 max Unit nC ns ns ns ns V

Switching Time Test Circuit


VDD=200V ID=1.8A RL=111 VGS=15V PW=1s D.C.0.5%

VOUT

P.G

RGS 50

2SK2624LS

4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3

ID -- VDS
15V

5.0

ID -- VGS
VDS=10V Tc=--25C

4.5 4.0

Drain Current, ID A

Drain Current, ID A

3.5 3.0 2.5 2.0 1.5 1.0

25C 75C

8V

V 10
7V

VGS=6V
4 5 6 7 8 9 10

0.5 0 0 2 4 6 8 10 12 14 16 18 20

Drain-to-Source Voltage, VDS V


4.0

IT01020

Gate-to-Source Voltage, VGS V


7.0 6.5 6.0

IT01021

RDS(on) -- VGS
Tc=25C

RDS(on) -- Tc

Static Drain-to-Source On-State Resistance, RDS(on)

Static Drain-to-Source On-State Resistance, RDS(on)

3.5

5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 --50 --25 0 25 50 75 100 125 150

3.0

2.5

ID=3.0A 1.8A

2.0

1.0A
1.5

0V =1 S G ,V 5V .8A =1 =1 S G ID V , .8A =1 ID

1.0 0 2 4 6 8 10 12 14 16 18 20

Gate-to-Source Voltage, VGS V

IT01022

Case Temperature, Tc C

IT01023

No.54042/4

2SK2624LS
10

yfs -- ID
VDS=10V
Cutoff Voltage, VGS(off) V

VGS(off) -- Tc
VDS=10V ID=1mA

Forward Transfer Admittance, | yfs | S

7 5 3 2

1.0 7 5 3 2

Tc=--25C 25C

75C

0.1 0.1

Drain Current, ID A

1.0

10 IT01024

0 --50

--25

25

50

75

100

125

150

Case Temperature, Tc C
100 7

IT01025

Forward Current, IF A

10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2

Switching Time, SW Time ns

100 7 5 3 2

IF -- VSD
VGS=0

SW Time -- ID
td(off)
tf VDD=200V VGS=15V

5 3 2

td(on) tr

10 7 5 3 2

0.01 7 5 3 2 0.001 0

75 C 25 C --25 C

Tc=

1.0 0.3 0.6 0.9 1.2 1.5 IT01026 100 7 5 3 2 5 7 1.0 2 3 5 IT01027

Diode Forward Voltage, VSD V


1000 7 5

Drain Current, ID A

Ciss, Coss, Crss -- VDS


Ciss f=1MHz

Forward Bias A S O

IDP=12A ID=3A

<10s
10
1m s 10 m 10 s 0m s

Ciss, Coss, Crss pF

Drain Current, ID A

3 2

Coss Crss

10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2

10

0 s

100 7 5 3 2

Operation in this area is limited by RDS(on). Tc=25C Single pulse


2 3

DC op era tio n

10

10

15

20

25

30 IT01028

Drain-to-Source Voltage, VDS V


2.5

0.01 1.0

Drain-to-Source Voltage, VDS V

5 7 10

5 7 100

5 7 1000 IT01029

PD -- Ta
Allowable Power Dissipation, PD W

30

PD -- Tc

Allowable Power Dissipation, PD W

2.0

25

20

1.5

15

1.0

10

0.5

0 0 20 40 60 80 100 120 140 160

0 0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta C

IT01031

Case Temperature, Tc C

IT01030

No.54043/4

2SK2624LS

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2000. Specifications and information herein are subject to change without notice.
PS No.54044/4

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