TERM PAPER ELECTRONIC DEVICES AND CIRCUITS ECE201

Topic : Schottky diode D.O.A.: D.O.S.:

Submitted to: Miss Nidhi Head of Electronics Department

Submitted by : Gyan Ankush Das RD6905A28 10906598 D6905

TABLE OF CONTENTS :

Serial no.

Topics

1 2 3 4 5 6 7 8 9 10 11 12 13

Introduction to solid state devices Diodes Schottky diodes Construction Real Schottky diodes Schottky barrier diode Schottky junction Operation of schottky diodes V-I characteristics Comparison with p-n junction diodes Advantages Applications References

ACKNOWLEDGEMENT
The topic is about the SCHOTTKY DIODE and consists a stipulated amount of information about its types . The project has been conveniently and satisfactorily completed by me. For the completion of this project I want to convey my gracious thanks to the Wi-Fi connection of the Lovely University, whose internet connection contributed a lot to make an end to this project . Gyan Ankush Das

INTRODUCTION TO SOLID STATE DEVICES :

The use of semiconductors is not new, some devices are old as the electron tube. The two most important types of semiconductors are the transistors and the junction diodes. These devices fall under a more generalized category called the solid state devices. These devices are generally electronic devices which works by the virtue of the movement of the electrons within a piece of semiconductor material . Solid state devices which are made from semiconductor material offers compactness, efficiency and versatility. In addition to the two most important types of semiconductors i.e. junction diodes and transistors, a whole new family of related devices have been developed namely zener diodes, light emitting diodes . The most recent development that has dominated the modern electronic industry is the integrated circuit known as the IC. It is generally a minute piece of semiconductor material that can give rise to complete electronic functions.

DIODES :
Diodes are the fundamental electronic building block. They have a very good ability to restrict current flow substantially to one direction is a critical property relied upon in every electronic circuit manufactured till date, from the smallest power supply to the largest industrial process control. In recent years, mobile communication equipment which includes digital cellular phones and high speed data communication equipment have been required to be small, thin and lightweight, low power consumption, a high frequency and multi bands. In response to reduction in the size of the high frequency module, various diodes which includes a variable capacitance diode, a PIN diode, a Schottky diode which is used in the high frequency module are required to be small.

 SCHOTTKY DIODES :
Schottky diodes are those semiconductor devices which consists of a metal semiconductor transition as their basic structure and its basic electronic properties are defined by this transition.

Figure : Symbol of a schottky diode

CONSTRUCTION :
It is formed by the connection of a metal or silicide layer to a doped semiconductor layer. A barrier known as the Schottky barrier is formed at the junction of the metal layer and the doped semiconductor layer. A separate metallization layer is insulatively disposed over the substrate to provide an electrical contact to the Schottky contact layer.

Figure : Deposited metal and oxide film Schottky diode It is also safe to interpose a separate diffusion barrier layer between the metallization layer and the underlying Schottky contact layer to prevent interdiffusion of the metallization layer with the Schottky layer and the semiconductor substrate. These diodes

consist of a metal semiconductor transition as their basic structure and whose basic electronic properties are defined by this transition.

Figure : Schematic representation

REAL SCHOTTKY DIODES :

These diodes also have minority-carrier injection through their barriers although it is smaller by several orders of magnitude. This process is called modulation of the epitaxial layer. This injection increases as the barrier height, voltage type, forward current density and the junction temperature increase.

SCHOTTKY BARRIER DIODE:

It is actually a variation of the point contact diode in which the metal semiconductor is a surface rather than a point contact. The barrier between the metal and the semiconductor in the Schottky barrier diode provides advantages over the point contact diode.

Figure :Deposited metal Schottky barrier diode

SCHOTTKY JUNCTION :
It is formed by plating a very pure metal, typically by evaporation under vacuum, onto a wafer that has been doped with either p-type or n-type dopant atoms. When these materials are brought into contact and equilibrium is achieved, then their Fermi levels become equal. Electrons from semiconductors lower their energy levels by inward flow into the metal resulting in the accumulation of charge in the interface, distorting the energy bands in the semiconductor. This creates the Schottky barrier which prevents more electrons from flowing from the n-type material to the metal without assistance from an external energy source of the correct polarity to elevate their energy above the Schottky barrier height. The external energy of the opposite polarity increases the barrier height, thus preventing conduction. When the metal is brought into contact with the n-type semiconductor during fabrication of the chip, electrons diffuse out of the semiconductor into the metal leaving a region known as the depletion layer under the contact which consists of no free electrons. This region contains donor atoms. The process of diffusion continues until the semiconductor is so positive with respect to the, that no more electrons can go into the metal. The voltage difference between the metal and the semiconductor is referred to as the contact potential, and falls in the range 0.3-0.8 V for typical Schottky diodes.

OPERATION OF SCHOTTKY DIODES : 1. OPERATION IN FORWARD BIASED :

When forward biased, the high energy electrons in the N region are injected into the metal region where energy is being given by them in excess. The metal or semiconductor junctions exhibit rectifying behavior,

allowing the current to pass through the structure more readily with one polarity than the other.

2. OPERATION IN REVERSE BIASED :

When reverse biased it follows a high resistance current path. The resistance high than from ohms law current will be small.

Figure : Schottky diodes

V-I CHARACTERISTICS OF SCHOTTKY DIODE :

The I-V characteristic is shown below. It can be seen that the Schottky diode has a typical forward semiconductor diode characteristic, but with much lower turn on voltage. At high current levels it levels off and is limited by the series resistance or maximum level of current injection. In the reverse direction breakdown occurs above a certain level. The mechanism is similar to the ionisation breakdown in a PN junction.

Figure : Tendency of forward voltage drop with different types of voltage and barrier height

COMPARISON OF SCHOTTKY DIODE AND P-N JUNCTION DIODE :

A Schottky diode is primarily a majority carrier device, while a p-n junction diode conducts current both due to majority and minority carrier devices. They often have faster switching times than p-n junction diodes of comparable size. The V-I characteristics of Schottky diodes are purely similar to that of p-n junctions. The Schottky diodes can be switched either from on to off and from off to on much faster than p-n junction diodes

 ADVANTAGES :
High speed. High frequency. Low forward voltage drop. Low heat dissipation

APPLICATIONS :
They are widely used in ICs such as decoupling devices in digital circuits (silicon bipolar and gallium-arsenide MOSFET ) because they are majority carrier devices. They are used as clamping devices to prevent heavy saturation of bipolar transistors.

Figure : An N-P-N transistor with schottky diode clamp They are used as a switch to speed up operations. It is an important power device such as OR circuits- Here a load is driven by two power supplies. In this case it is necessary that the power from one supply does not enter the other and is achieved by using diodes. It is used extensively as output rectifiers in switching mode power supplies- Their high current density and low forward voltage drop means that less power is wasted as compared to ordinary p-n diodes. This increased efficiency means that less heat is to dissipate. It is used in high switching applications, such as motor drives, switching of communication device, industry automation and electronic automation. It is also useful in solar cell applications- Solar cells are connected to rechargeable batteries because power may be required 24 hours a day. A diode is required in series with the solar cells. Any drop in voltage results in a reduction in efficiency and therefore a low voltage drop diode is needed.

 REFERENCES
powerelectronics.com/mag/405PET31.pdf www.electro-tech-online.com/.../17640-difference-between-

normal-diode-schottky-diode.html wiki.answers.com/.../What_are_the_advantages_and_disa dvantages_of_Schottky_diode www.mpdigest.com/issue/Articles/2009/feb/.../Default.asp www.schottky-diode.com/