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February 2001
FDS9945
60V N-Channel PowerTrench MOSFET
General Description
These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
3.5 A, 60 V. RDS(ON) = 0.100 @ V GS = 10 V RDS(ON) = 0.200 @ V GS = 4.5V
Optimized for use in switching DC/DC converters with PWM controllers Very fast switching Low gate charge.
D2 D
D2 D
DD1 D1 D
5 6 7
Q1
4 3 2
Q2
SO-8
Pin 1 SO-8
G1 S1 G G2 S S2 S
Parameter
Ratings
60 20
(Note 1a)
Units
V V A W
TJ , TSTG
Thermal Characteristics
R JA R JA R J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
FDS9945
Electrical Characteristics
Symbol
BV DSS BV DSS TJ IDSS IGSSF IGSSR
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
V GS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C V DS = 48 V, V GS = 20 V, V GS = 20 V V GS = 0 V V DS = 0 V V DS = 0 V
Min
60
Typ
Max Units
V
Off Characteristics
62.5 1 100 100 mV/C A nA nA
On Characteristics
V GS(th) V GS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance
V DS = V GS , ID = 250 A ID = 250 A, Referenced to 25C V GS = 10 V, ID = 3.5 A V GS = 4.5V, ID = 2.5 A V GS = 10 V, ID =3.5A, TJ =125C V GS = 10 V, V DS = 5V, = V DS =30 V ID = 3.5 A
V mV/C
ID(on) gFS
10 8.6
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
V DS = 30 V, f = 1.0 MHz
V GS = 0 V,
420 48 20
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
V DD = 30 V, V GS = 10 V,
ID = 1 A, RGEN = 6
7 4.3 19 3
14 8.6 34 6 13
ns ns ns ns nC nC nC
V DS = 30 V, V GS = 5 V
ID = 3.5 A,
8 4 2.5
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward V GS = 0 V, IS = 2.1 A Voltage
2.1
(Note 2)
A V
0.8
1.2
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
FDS9945
Typical Characteristics
20
2 VGS = 4.0V 1.8 1.6 4.5V 1.4 1.2 1 0.8 5.0V 6.0V 10V
15
4.5V 10
4.0V 5
12
15
2 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100
o
125
150
TJ , JUNCTION TEMPERATURE ( C)
T A = -55 C
VGS = 0V
o
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS9945
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 3.5A 8 CAPACITANCE (pF) 40V 6 VD S = 20V 30V
600 500 CISS 400 300 200 COSS 100 C RSS 0 0 4 8 Q g, GATE CHARGE (nC) 12 16 0 5 10 15 20 25 30 VDS , DRAIN TO SOURCE VOLTAGE (V) f = 1MHz VGS = 0 V
100s ID, DRAIN CURRENT (A) 10 R DS(ON) LIMIT 1ms 10ms 1 VGS = 10V SINGLE PULSE o R JA = 135 C/W T A = 25 C 0.01 0.1
o
40
30
100ms 1s DC 10s
20
0.1
10
10
100
0 0.001
0.01
0.1
10
100
t1 , TIME (sec)
1
D = 0.5 0.2
0.1
0.1 0.05
P(pk)
0.02 0.01
t1 t2
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
10
100
1000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DOME E2CMOSTM EnSignaTM FACT FACT Quiet Series FAST
DISCLAIMER
FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP
PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START SuperSOT-3 SuperSOT-6 SuperSOT-8
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LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G