Philips Semiconductors

Product specification

Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

GENERAL DESCRIPTION
Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener diodes providing active collector voltage clamping and ESD protection up to 2 kV.

BUK856-400 IZ

QUICK REFERENCE DATA

SYMBOL PARAMETER V(CL)CER VCEsat IC Ptot ECERS Collector-emitter clamp voltage Collector-emitter on-state voltage Collector current (DC) Total power dissipation Clamped energy dissipation MIN. TYP. MAX. UNIT 370 410 500 2.2 20 100 300 V V A W mJ

PINNING - TO220AB
PIN 1 2 3 tab gate collector emitter collector DESCRIPTION

PIN CONFIGURATION
tab

SYMBOL
c

1 23

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VCE VCE VGE IC IC ICM ICLM ECERS ECERR1 EECR1 Ptot Tstg Tj PARAMETER Collecter-emitter voltage Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector current (pulsed peak value, on-state) Collector current (clamped inductive load) Clamped turn-off energy (non-repetitive) Clamped turn-off energy (repetitive) Reverse avalanche energy (repetitive) Total power dissipation Storage temperature Operating Junction Temperature CONDITIONS tp 500 s Continuous Tmb = 100 C Tmb = 25 C Tmb = 25 C; tp 10 ms; VCE 15 V 1 k RG 10 k Tmb = 25 C; IC = 10 A; RG = 1 k; see Figs. 23,24 Tmb = 100 C; IC = 8 A; RG = 1 k; f = 50 Hz IE = 1 A; f = 50 Hz Tmb = 25 C MIN. -20 -55 -40 MAX. 500 50 12 10 20 25 10 300 125 5 125 150 150 UNIT V V V A A A A mJ mJ mJ W C C

ESD LIMITING VALUE

SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model (100 pF, 1.5 k) MIN. MAX. 2 UNIT kV

1 This applies to short-term operation in ignition circuits with open-secondary ignition coil.

November 1998

Rev. 1.400

Philips Semiconductors

Product specification

Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS In free air TYP. 60

BUK856-400 IZ

MAX. 1.0 -

UNIT K/W K/W

STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL V(BR)CG V(BR)EC V(BR)GES VGE(TO) VGE(TO) ICES ICES IEC IEC IGES VCEsat PARAMETER Collector-gate zener breakdown voltage Reverse collector-emitter breakdown voltage Gate-emitter breakdown voltage Gate threshold voltage Gate threshold voltage Zero gate voltage collector current Zero gate voltage collector current Reverse collector current Reverse collector current Gate emitter leakage current Collector-emitter on-state voltage CONDITIONS 2 mA -IG 5 mA; -40 Tj 150C IE = 10 mA IG = 1 mA VCE = VGE; IC = 1 mA VCE = VGE; IC = 1 mA; -40 Tj 150C VCE = 50 V; VGE = 0 V; Tj = 25 C Tj = 125 C VCE = -20 V VCE = -20 V; Tj = 125C VGE = 6 V Tj = 150C VGE = 4.5 V; IC = 8 A VGE = 3.5 V; IC = 6 A; -40 Tj 150C MIN. 370 20 12 1 0.6 TYP. 410 30 16 1.5 0.01 0.01 0.2 2 0.1 5 1.2 1.2 MAX. 500 50 20 2 2.4 10 1 5 20 1 100 2.2 2.2 UNIT V V V V V A mA mA mA A A V V

DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL V(CL)CER PARAMETER CONDITIONS MIN. 370 TYP. 410 MAX. 500 UNIT V Collector-emitter clamp voltage RG = 1 k; IC = 10 A; (peak value) -40 Tj 150C; Inductive load; see Figs. 23,24 Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-off delay time Fall time Crossover Time Turn-off Energy loss VCE = 15 V; IC = 4 A VGE = 0 V; VCE = 25 V; f = 1 MHz

gfe Cies Coes Cres td off tf tc Eoff

5.5 850 -

15 940 95 30 13 6 12 13

20 1200 130 50 18 10 -

S pF pF pF s s s mJ

IC = 8 A; VCL = 300 V; RG = 1 k; VGE = 5 V; Tj = 125C; Inductive load; see Figs. 20,21

November 1998

Rev. 1.400

Philips Semiconductors

Product specification

Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

BUK856-400 IZ

1E+01

Zth(j-mb) / (K/W)

120 110 100 90 80 70 60 50 40

P D t p t D= p T

PD%

Normalised Power Derating

1E+00

D= 0.5 0.2

1E-01

0.1 0.05 0.02

1E-02
0

30 20 10 0
1E+01

t T

1E-03 1E-07

1E-05

1E-03 t/s

1E-01

20

40

60

80 100 Tmb / C

120

140

Fig.1. Transient thermal impedance Z th j-mb = f(t) ; parameter D = tp/T

IC / A I CLM 10 BUK8Y6-400IZ

Fig.4. Normalised power dissipation. PD% = 100.PD/PD 25C = f(Tmb)

ICLM / A BUK8Y6-400IZ

15

10

Self-clamped 1
5

0.1 0 200 VCE / V 400 600

0 0 50 100 150 dVCE/dt (V/us) 200

Fig.2. Turn-off Safe Operating Area conditions: Tj Tjmax. ; RG 1 k

VCE / V
Tj / C = 150 25 -40

Fig.5. Derating of ICLM with turn-off dVCE/dt conditions: VCE 500 V; Tj Tjmax.
VCE / V
Tj / C = 150 25 -40

PMG35A

PMG35A

1.5
2

1
1

0.5

0 0 4 8 12 16 IC / A 20 24

0 0 4 8 12 16 IC / A 20 24

Fig.3. Typical On-state Voltage VCEsat = f(IC); parameter Tj; conditions: VGE = 3.5 V

Fig.6. Typical On-state Voltage VCEsat = f(IC); parameter Tj; conditions: VGE = 5 V

November 1998

Rev. 1.400

Philips Semiconductors

Product specification

Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

BUK856-400 IZ

30

IC / A 5 4

PMG35A VGE / V = 4 3

1E-2 1E-3 IE-4

+/- IGES / A

PMG35A

20 2.8 2.6 10 2.4 2.2 2 0 0 2 4 VCE / V 6 8 10

1E-5 1E-6 1E-7 1E-8 1E-9 0 5 10 VGE / V 15 20

Fig.7. Typical Output Characteristics IC = f(VCE); parameter VGE; conditions: Tj = 25C

IC / A
Tj / C = 150 25 -40

Fig.10. Typical gate-emitter charcteristics IGES = f(VGE); conditions: VCE = 0 V; Tj = 25C

ICES / mA
150 Tj / C = 25 -40

30

PMG35A

10

PMG35A

20

1
10

0 0 1 2 VGE / V 3 4

0.1 350

370

390 410 VCE / V

430

450

Fig.8. Typical Transfer Characteristics IC = f(VGE), parameter Tj; conditions: VCE = 10 V

gfe / S PMG35A

Fig.11. Typical collector clamp characteristics ICES = f(VCE); parameter Tj; conditions: VGE = 0 V

35 30 25 20

2.5

VGE(TO) / V

BUK856-400IZ

max.

1.5

15 10 5 0 0
Tj / C = 150 25 -40

typ.

min.

10 IC / A

20

30

0.5 -40 -20 0 20 40 60 Tj / C 80 100 120 140

Fig.9. Typical Forward Transconductance gfe = f(IC); parameter Tj; conditions: VCE = 10 V

Fig.12. Gate Threshold Voltage VGE(TO) = f(Tj); conditions: IC = 1 mA; VCE = VGE

November 1998

Rev. 1.400

Philips Semiconductors

Product specification

Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

BUK856-400 IZ

1E-01

IC / A

SUB-THRESHOLD CONDUCTION

100

t / us, E / mJ

PMG35A

1E-02 2% 98 %

td(off) E(off)
typ

1E-03

10
1E-04

tf
1E-05

1E-06 0 0.4 0.8 1.2 VGE / V 1.6 2 2.4

1 0 1 2 3 Rg / kOhm 4 5

Fig.13. Sub-threshold collector current IC = f(VGE); Tj = 25C; VCE = VGE

VGE / V PMG35A

Fig.16. Typical Switching Characteristics vs. RG conditions: Tj=125 C; IC=8 A; VCL=300 V; LC=5 mH.
t / us, E / mJ 15 PMG35A

6 5

Vcc / V = 12
4
td(off)

300
3 2 1 0 0 10 20 Qg / nC 30

10
E(off)

5
tf

0 0 50 Tj / C 100 150

Fig.14. Typical Turn-on Gate Charge Characteristics VGE = f(QG); conditions: IC = 8 A.

C / pf pmg35a

Fig.17. Typical Switching Characteristics vs. Tj conditions: IC=8 A; VCL=300 V; RG=1 k; LC=5 mH.
t / us, E / mJ 15
td(off)

10000

PMG35A

1000

Cies

10

tf

100
Coes

10 0.01 0.1 1 10 VCE / V 100

Cres

0 0

E(off)

1000

4 IC / A

10

Fig.15. Typical Capacitances Cies, Coes, Cres C = f(VCE); conditions: VGE = 0 V; f = 1 MHz

Fig.18. Typical Switching Characteristics vs. IC conditions: Tj=125 C VCL=300 V; RG=1 k; LC=5 mH.

November 1998

Rev. 1.400

Philips Semiconductors

Product specification

Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

BUK856-400 IZ

150

dVce/dt (V/us)

PMG35A

35

V(BR)ECS / V

BUK856-400IZ

typ.
100

30

50

25 min.

0 0 1 2 3 Rg / kOhm 4 5

20 -50

50 Tj / degC

100

150

Fig.19. Typical Turn-off dVCE/dt vs. RG conditions: Tj=125 C; IC=8 A; VCL=300 V; LC=5 mH.
Vcc

Fig.22. Reverse Breakdown Voltage V(BR)ECS = f(Tj); conditions: IEC = 50 mA

Vcc

Lc t p : adjust for correct Ic V CL

Lc t p : adjust for correct Ic

D.U.T. RG
VGE
IC measure

D.U.T. RG
VGE
IC measure

0V
0R1

0V
0R1

Fig.20. Test circuit for inductive load switching times.

Fig.23. Test circuit for clamped turn-off energy test

I 90%

Ic

tf td(off)
V Vce t V(cl)cer

10% t 90% VGE tc

P Vce x Ic

VCE

Vge

10% t

Ecer t

Fig.21. Definitions of inductive load switching times.

Fig.24. Definition of clamping energy ECER

November 1998

Rev. 1.400

Philips Semiconductors

Product specification

Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

MECHANICAL DATA
Dimensions in mm Net Mass: 2 g

BUK856-400 IZ

4,5 max 10,3 max

1,3

3,7 2,8
5,9 min

15,8 max

3,0 max not tinned

3,0

13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54

0,9 max (3x)

0,6 2,4

Fig.25. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8".

November 1998

Rev. 1.400

Philips Semiconductors

Product specification

Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

DEFINITIONS
Data sheet status Objective specification Product specification Limiting values

BUK856-400 IZ

This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

November 1998

Rev. 1.400