Homework #8 Solutions EE 528, Fall 2010

9.7. (a) Plot the deposition rate (on a log scale) versus 1/T (K), for 600-1200C for a
CVD system with the following parameter values:

h
G
= 0.5 cm sec
-1
, k
S
= 4x10
6
exp(-1.45 eV/kT) cm sec
-1

Partial pressure of incorporating species = 1 torr, Total pressure = 1 atm
C
T
/n=1/10,000

Identify the reaction and mass transfer limited regimes.

(b) Redo the problem when the total pressure is decreased to 1 torr, so that h
G

increases by 100 times. Assume that the partial pressure of the incorporating
species remains the same, and C
T
decreases by the same factor as the total
pressure.

Answer:
By Equation 9.10: v=
k
S
h
G
k
S
+ h
G
C
T
N
Y =
1
1
h
G
+
1
k
S
|
\

|
.
|
C
T
N
Y ,
h
G
=0.5 cm sec
-1

k
S
= 4x10
6
exp(-1.45 eV/kT) cm sec
-1
where T =TC +273
C
T
/N=1/10,000
Y =P
g
/P
total
=1 torr / 760 torr

For low pressure case, only h
g
changes (increased by 100 times). C
T
/N times
P
g
/P
total
remains constant since n and P
g
each remains constant, and the C
T
/P
total
ratio
stays constant as stated above.

For the 1 atm total pressure case, the transition between surface reaction controlled
and diffusion controlled is at about 800C, while for the low pressure case (low
P), the transition occurs above 1200C.
10
-5
10
-4
10
-3
10
-2
10
-1
0.60 0.75 0.90 1.05 1.2
V
V(low P)
V ( m i c r o n s / s e c )
1000/T(K)
600C 1200C 800C

0 1 0 1

0 1
Homework #8 Solutions EE 528, Fall 2010

10.7. (a) In a particular etch process, if selectivity is the biggest concern, which
type(s) of etch equipment should be used?
(b) If the biggest concern is ion bombardment damage, which type(s) of etch
equipment should be used?
(c) If the biggest concern is obtaining vertical sidewalls, which type(s) of etch
equipment should be used?
(d) If the biggest concerns are selectivity and vertical sidewalls, which type(s)
of etch equipment should be used?
(e) What about selectivity and vertical sidewalls and damage, while maintain-
ing reasonable etch rate?

Answer:

a. If biggest concern is selectivity? barrel or remote plasma or wet etching

b. If biggest concern is damage? barrel or remote or wet

c. If biggest concern is vertical sidewalls? sputtering or RIE/HDP

d. What about selectivity AND vertical sidewalls? RIE/HDP

e. What about selectivity AND vertical sidewalls AND damage, while maintaining
reasonable etch rate? HDP