Académique Documents
Professionnel Documents
Culture Documents
seven
A European Integrated Project supported through the Seventh Framework Programme for Research and Technological Development.
Towards 0.7 THz 0.5 - Silicon-Germanium Heterojunction Towards TeraHertz Silicon/Germanium Bipolar Technology - (0.7 THz SiGe HBT) Heterojunction Bipolar technology (SiGe HBT)
seven
Objective
To develop SiGe heterojunction bipolar transistors operating at maximum oscillation frequencies of up to 700 GHz at room temperature. DOTSEVEN is a very ambitious 3.5 year R&D project targeting the development of silicon germanium (SiGe) heterojunction bipolar transistor (HBT) technologies with cut-off frequencies (fmax) up to 700 GHz. Special attention will be paid to clearly demonstrate the manufacturability and integration with CMOS as well as the capabilities and benefits of 0.7 THz SiGe HBT technology by benchmark circuits and system applications in the 0.1 to 1 THz range. The main objective of the DOTSEVEN consortium is therefore to reinforce and further strengthen Europes leading edge position in SiGe HBT technology and modeling as well as SiGe enabled mm-wave applications so as to stay significantly ahead of non-European competition. A highly qualified and success-proven consortium has been set-up to achieve these goals.
High-speed Communication
roadband ADCs B with 50-100GS/s and >25GHz signal bandwidth at 5-6 bit resolution 00 Gb/s wireless 1 data transmission Satellites
Radar Applications
120 GHz industrial > sensors and automation utomotive radars A (affordable vehicle and road safety for everyone)
CHALLENGES
TARGET MONTH
IHP: IFAG:
7 21 41
fmax / td = 600 GHz / 1.7 ps fmax / td = 700 GHz / 1.4 ps Fundamental Operating Frequency of MMIC: 240 GHz 240 GHz Radar Demonstrator Communication Demonstrator: Towards 100 Gbps THz Imaging demonstrator (>300 GHz)
41
eliability R - Yield (e.g. leakage currents, very thin SiGe base layers) - Excessive selfheating (performance degradation / electromigration) - Extremely high emitter / collector current density (electromigration) - Degradation effects under mixed-mode stress - ESD protection ompatibility with CMOS processing C at the 130/90 nm mode
WP2 TCAD & physics-based predictive modelling Task 2.1: Electrical device simulation tools Task 2.2: Combined thermal/device simulation Task 2.3: Device reliability analysis
Consortium:
The consortium has a balanced partnership including: Industry: Infineon Technologies AG, Dice Danube Integrated Circuit Engineering GmbH & Co KG, Alma Consulting Group Small/medium enterprises (SME): XMOD Technologies, SiversIMA Aktiebolag, Trebax AB Academic & Institutional: Universita Degli Studi di Napoli Federico II, Rheinisch-Westfaelische Technische Hochschule Aachen, Technische Universitaet Dresden, Universit Bordeaux I, Bergische Universitaet Wuppertal, Universitaet Linz, Technische Universiteit Delft, Innovations for High Performance Microelectronics.
In order to reach these ambitious objectives the consortium consists of 14 partners from industry and academia in 6 European countries:
Acknowledgment:
Supported by the European Commission through the Seventh Framework Programme (FP7) for Research and Technology development with up to 8.6M, out of a total budget of 12.28M. The DOTSEVEN project addresses the area More than Moore, Beyond (and ahead) of CMOS The project has started on October 1st, 2012 and will end on March 31st, 2016.
Literature: M. Schroter, G. Wedel, B. Heinemann, C. Jungemann, J. Krause, P. Chevalier, A. Chantre, Physical and electrical performance limits of high-speed SiGeC HBTs - Part I: Vertical scaling and Part II: Lateral scaling, IEEE Trans. Electron Dev., Vol. 58, No. 11, pp. 3687-3706, 2011. [DOT5] EU project targets 0.5-THz SiGe bipolar transistor, EE Times Europe print edition covering March 17 April 6, 2008. see also DOTFIVE website: http://www.dotfive.eu/see www.dotfive.eu [Hein10] B. Heinemann et al., SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay, Proc. IEDM, pp. 688-691, 2010.
Project Coordinator: Infineon Technologies AG - Dr. Rudolf Lachner, rudolf.lachner@infineon.com (+49) 89 234 49952 Technical Project Manager: TU Dresden Prof. Michael Schrter, michael.schroeter@tu-dresden.de (+49)35 14 63 37 687 Management Support: ALMA Consulting Group Ms Julie Chupin, jchupin@almacg.com, ALMA Consulting Group Ms Patricia Kudelka, pkudelka@almacg.com
www.dotseven.eu
seven