Preliminary data

BSS 84 P

SIPMOS Small-Signal-Transistor
Features
P-Channel

Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current

VDS RDS(on) ID
3

-60 8 -0.17

Enhancement mode

W
A

Avalanche rated Logic Level dv/dt rated

2 1
VPS05161

Type BSS 84 P

Package SOT-23

Ordering Code Q67041-S1417

Marking YBs

Pin 1 G

PIN 2 S

PIN 3 D

Maximum Ratings,at T A = 25 C, unless otherwise specified Parameter Symbol Continuous drain current

Value -0.17 -0.14

Unit A

ID

T A = 25 C T A = 70 C
Pulsed drain current

I D puls EAS EAR

dv/dt

-0.68 2.6 0.036 6 kV/s mJ

T A = 25 C
Avalanche energy, single pulse

I D = -0.17 A , V DD = -25 V, RGS = 25 W

Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt

I S = -0.17 A, V DS = -48 V, di/dt = 200 A/s, T jmax = 150 C

Gate source voltage Power dissipation

VGS Ptot T j , T stg

20 0.36 -55...+150 55/150/56

V W C

T A = 25 C
Operating and storage temperature IEC climatic category; DIN IEC 68-1

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1999-11-22

Preliminary data
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 3) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. -

BSS 84 P

Unit max. 200 K/W

RthJS RthJA

350 300

Electrical Characteristics , at T A = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. -1.5 max. -2 A -0.1 -10 -10 8 5.8 -1 -100 -100 12 8 nA V Unit

V(BR)DSS VGS(th) IDSS

-60 -1

VGS = 0 V, I D = -250 A
Gate threshold voltage, VGS = VDS I D = -20 A Zero gate voltage drain current

VDS = -60 V, V GS = 0 V, T A = 25 C VDS = -60 V, V GS = 0 V, T A = 125 C

Gate-source leakage current

IGSS RDS(on) RDS(on)

VGS = -20 V, VDS = 0 V

Drain-source on-state resistance

VGS = -4.5 V, I D = -0.14 A

Drain-source on-state resistance

VGS = -10 V, I D = -0.17 A

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2

1999-11-22

Preliminary data
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Transconductance Input capacitance

BSS 84 P

Values typ. max.

Unit

VDS2*I D*RDS(on)max , ID = -0.14 A VGS = 0 V, V DS = -25 V, f = 1 MHz

Output capacitance

gfs Ciss Coss Crss t d(on)

0.065 -

0.13 15 6 2 14

19 8 3 21

S pF

VGS = 0 V, V DS = -25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0 V, V DS = -25 V, f = 1 MHz

Turn-on delay time ns

VDD = -30 V, V GS = -4.5 V, I D = -0.14 A, RG = 25 W

Rise time

tr

VDD = -30 V, V GS = -4.5 V, I D = -0.14 A, RG = 25 W

Turn-off delay time

t d(off)

27

40

VDD = -30 V, V GS = -4.5 V, I D = -0.14 A, RG = 25 W

Fall time

tf

23

34

VDD = -30 V, V GS = -4.5 V, I D = -0.14 A, RG = 25 W

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1999-11-22

Preliminary data
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Gate to source charge

BSS 84 P

Values typ. max.

Unit

Q gs Q gd Qg V(plateau)

0.25 0.3 1 -3.42

0.37 0.45 1.5 -

nC

VDD = -48 V, ID = -0.17 A

Gate to drain charge

VDD = -48 V, ID = -0.17 A

Gate charge total

VDD = -48 V, ID = -0.17 A, V GS = 0 to -10 V

Gate plateau voltage V

VDD = -48 V, ID = -0.17 A

Parameter Reverse Diode Inverse diode continuous forward current

Symbol min.

Values typ. -0.93 23 10 max. -0.17 -0.68 -1.24 34 15

Unit

IS ISM VSD trr Qrr

T A = 25 C
Inverse diode direct current,pulsed

T A = 25 C
Inverse diode forward voltage V ns nC

VGS = 0 V, I F = -0.17 A
Reverse recovery time

VR = -30 V, IF=I S , di F/dt = 100 A/s

Reverse recovery charge

VR = -30 V, IF=l S , diF/dt = 100 A/s

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1999-11-22

Preliminary data
Power Dissipation Drain current

BSS 84 P

Ptot = f (TA)
BSS 84 P

ID = f (TA )
parameter: VGS
BSS 84 P

10 V

0.38

-0.18

W A
0.32 -0.14 0.28 -0.12

Ptot

ID
-0.10 -0.08 -0.06 -0.04 -0.02 0.00 0

0.24 0.20 0.16 0.12 0.08 0.04 0.00 0

20

40

60

80

100

120

160

20

40

60

80

100

120

160

TA

TA

Safe operating area

Transient thermal impedance

I D = f ( VDS )
parameter : D = 0 , T A = 25 C
-10
1

ZthJC = f (tp )
parameter : D = tp /T
10 3
BSS 84 P

BSS 84 P

K/W

-10 0

tp = 170.0 s

10 2

/I D

-10

-1

DS

1 ms

Z thJC
10 1 D = 0.50
10 ms

ID

RD

o S(

n)

0.20 0.10

-10 -2 DC

10 0

0.05 single pulse 0.02 0.01

-10 -3 -1 -10

-10

-10

-10

10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10

s 10 4

VDS
Page 5

tp

1999-11-22

Preliminary data
Typ. output characteristic

BSS 84 P

Typ. drain-source-on-resistance

I D = f (VDS); TA=25C parameter: tp = 80 s

BSS 84 P

RDS(on) = f (ID )
parameter: VGS
BSS 84 P

-0.40

Ptot = 0W
l k j i h
VGS [V] g a -2.5

A
-0.32

W
f
b c -3.0

26
a b c d e f g

22 20

-0.28

RDS(on)

-3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -8.0 -10.0

d e

18 16 14 12 10 8 6 4 V [V] = GS
h i j k l

ID

-0.24 -0.20 -0.16 -0.12 -0.08 -0.04

b c

d g
h i j k l

2 -5.0

a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0

g h i j -5.5 -6.0 -6.5 -7.0

k l -8.0 -10.0

0.00 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V

0 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 -0.28 -0.32A -0.38

VDS

ID

Typ. transfer characteristics I D= f ( V GS )

VDS 2 x I D x RDS(on)max
parameter: tp = 80 s
-0.40
A

Typ. forward transconductance

gfs = f(ID); TA=25C

parameter: gfs
0.16
S

-0.30

0.12

ID

-0.20

gfs V

-0.25

0.10

0.08

-0.15

0.06

-0.10

0.04

-0.05

0.02

0.00 0.0

-1.0

-2.0

-3.0

-4.0

-6.0

0.00 0.00

-0.04

-0.08

-0.12

-0.16

-0.22

VGS

ID

Page 6

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Preliminary data
Drain-source on-state resistance Gate threshold voltage

BSS 84 P

RDS(on) = f (Tj)
parameter : I D = -0.17 A, VGS = -10 V
BSS 84 P

VGS(th) = f (Tj)
parameter: VGS = VDS , ID = -20 A
-3.0

W
RDS(on)

21

18 16

V GS(th)

14 12 10 8 6 4 2 0 -60
C

-2.0

98%

typ

98%

-1.5
2%

typ

-1.0

-0.5

-20

20

60

100

180

0.0 -60

-20

20

60

100

C
TA

160

TA

Typ. capacitances C = f(VDS) Parameter: VGS=0 V, f=1 MHz

10
2

Forward characteristics of reverse diode

IF = f (VSD )
parameter: Tj , tp = 80 s
-10 0
BSS 84 P

A
pF

-10 -1

Ciss
10 1

Coss Crss

IF
-10 -2

Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)

10 0 0
V

-5

-10

-15

-20

-25

-35

-10 -3 0.0

-0.4

-0.8

-1.2

-1.6

-2.0

-2.4 V

-3.0

VDS

VSD
Page 7

1999-11-22

Preliminary data
Avalanche energy Typ. gate charge

BSS 84 P

EAS = f (TA)
para.: I D = -0.17 A , VDD = -25 V, RGS = 25
3.0

VGS = f (QGate ) parameter: ID = -0.17 A pulsed

BSS 84 P

-16

mJ

-12

E AS

VGS

2.0

-10

1.5

-8 0,2 VDS max -6 0,8 VDS max

1.0 -4 0.5 -2

0.0 25

45

65

85

105

125

C
TA

165

0 0.0

0.2

0.4

0.6

0.8

1.0

1.2 nC

1.5

QGate

Drain-source breakdown voltage

V(BR)DSS = f (TA)
BSS 84 P

-72

V
-68 -66 -64 -62 -60 -58 -56 -54 -60

V(BR)DSS

-20

20

60

100

180

TA

Page 8

1999-11-22

Preliminary data
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Mnchen Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.

BSS 84 P

Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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1999-11-22