Philips Semiconductors

Product specification

Triacs

BT137X series

GENERAL DESCRIPTION
Passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

QUICK REFERENCE DATA

SYMBOL PARAMETER BT137XBT137XBT137XRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500 500F 500G 500 8 65 600 600F 600G 600 8 65 800 800F 800G 800 8 65

VDRM IT(RMS) ITSM

V A A

PINNING - SOT186A
PIN 1 2 3 DESCRIPTION main terminal 1

PIN CONFIGURATION
case

SYMBOL

T2
main terminal 2 gate
1 2 3

T1

case isolated

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Ths 73 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/s T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 8 65 71 21 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/s A/s A/s A/s A V W W C C

I2t dIT/dt

IGM VGM PGM PG(AV) Tstg Tj

Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature

over any 20 ms period

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/s. June 1999 1 Rev 1.300

Philips Semiconductors

Product specification

Triacs

BT137X series

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V

Cisol

Capacitance from T2 to external f = 1 MHz heatsink

10

pF

THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS full or half cycle with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 4.5 6.5 UNIT K/W K/W K/W

STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS BT137XVD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 10 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C MIN. TYP. ... 0.25 5 8 11 30 7 16 5 7 5 1.3 0.7 0.4 0.1 35 35 35 70 30 45 30 45 20 MAX. ...F 25 25 25 70 30 45 30 45 20 1.65 1.5 0.5 ...G 50 50 50 100 45 60 45 60 40 mA mA mA mA mA mA mA mA mA V V V mA UNIT

IL

Latching current

IH VT VGT ID

Holding current On-state voltage Gate trigger voltage Off-state leakage current

June 1999

Rev 1.300

Philips Semiconductors

Product specification

Triacs

BT137X series

DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS BT137XVDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 C; IT(RMS) = 8 A; dIcom/dt = 3.6 A/ms; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s ... 100 MIN. ...F 50 ...G 200 TYP. 250 MAX. UNIT V/s

dVcom/dt

10

20

V/s

tgt

June 1999

Rev 1.300

Philips Semiconductors

Product specification

Triacs

BT137X series

12 10

Ptot / W

Ths(max) / C 71 = 180 120

1

10

IT(RMS) / A

BT137X

80 89

90 60 30

73 C

8 6 4 2 0

6
98

4
107 116 125 10

4 6 IT(RMS) / A

0 -50

50 Ths / C

100

150

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle.
ITSM / A IT I TSM time Tj initial = 25 C max

Fig.4. Maximum permissible rms current IT(RMS), versus heatsink temperature Ths.
IT(RMS) / A

1000

25

20

15
100 dI T /dt limit

10

T2- G+ quadrant

10 10us

100us

1ms T/s

10ms

100ms

0 0.01

0.1 1 surge duration / s

10

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms.
ITSM / A IT T ITSM time

Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths 73C.
VGT(Tj) VGT(25 C)

80 70 60 50 40 30

1.6 1.4 1.2 1 0.8

Tj initial = 25 C max

20 10

0.6 0.4 -50

0 1

10 100 Number of cycles at 50Hz

1000

50 Tj / C

100

150

Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj.

June 1999

Rev 1.300

Philips Semiconductors

Product specification

Triacs

BT137X series

3 2.5 2 1.5

IGT(Tj) IGT(25 C) T2+ G+ T2+ GT2- GT2- G+

25

IT / A Tj = 125 C Tj = 25 C

20

typ
Vo = 1.264 V Rs = 0.0378 Ohms

max

15

10

1
5

0.5 0 -50
0

50 Tj / C

100

150

0.5

1.5 VT / V

2.5

Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj.
IL(Tj) IL(25 C)

Fig.10. Typical and maximum on-state characteristic.

10

Zth j-hs (K/W) with heatsink compound without heatsink compound unidirectional bidirectional

3 2.5

2 1.5 1 0.5 0 -50

0.01 10us 0.1ms 1ms 0.1

P D

tp

50 Tj / C

100

150

10ms tp / s

0.1s

1s

10s

Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj.
IH(Tj) IH(25C)

Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp.
dV/dt (V/us) off-state dV/dt limit
BT137...G SERIES BT137 SERIES

1000

3 2.5 2 1.5 1 0.5

100

BT137...F SERIES

10

dIcom/dt = 10 A/ms

7.9

6.1

4.7

3.6

2.8

0 -50

50 Tj / C

100

150

50 Tj / C

100

150

Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj.

Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt.

June 1999

Rev 1.300

Philips Semiconductors

Product specification

Triacs

BT137X series

MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
10.3 max 3.2 3.0

4.6 max 2.9 max

Recesses (2x) 2.5 0.8 max. depth

2.8 6.4 15.8 19 max. max. seating plane 15.8 max

3 max. not tinned 3 2.5 13.5 min. 1 0.4

M

3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7

5.08

Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".

June 1999

Rev 1.300

Philips Semiconductors

Product specification

Triacs

BT137X series

DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

June 1999

Rev 1.300