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2SK3561
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
SC-67 2-10U1B
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit C/W C/W
Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25C(initial), L = 8.3 mH, IAR = 8 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
2006-11-06
2SK3561
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 8 A Duty < = 1%, tw = 10 s Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 50 ID = 4 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 10 V, ID = 4 A Min 30 500 2.0 3.0 Typ. 0.75 6.5 1050 10 110 26 45 38 130 28 16 12 Max 10 100 4.0 0.85 pF Unit A V A V V S
ns
RL = 50 VDD 200 V
nC
Marking
K3561
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2006-11-06
2SK3561
ID VDS
10 COMMON SOURCE Tc = 25C PULSE TEST 20 1015 6 5.25 1015
ID VDS
6 COMMON SOURCE Tc = 25C PULSE TEST 5.5 12 5 8
16
4.75
4.5 4.25
VGS = 4 V
4.5 VGS = 4 V
0 0
10
0 0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE
VDS
(V)
DRAIN-SOURCE VOLTAGE
VDS
(V)
VDS VGS
COMMON SOURCE Tc = 25 8 PULSE TEST
16
DRAIN-SOURCE VOLTAGE
12
ID = 8 A
8 Tc = 55C 4 100 25
4 4 2 2
0 0
10
0 0
12
16
20
(V)
(V)
10
VGS = 10 V15V
0.1 0.1
10
100
DRAIN CURRENT ID
(A)
DRAIN CURRENT ID
(A)
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2SK3561
RDS (ON) Tc
2.0 100
1.2
ID = 8 A 4
0.8
0.4
0 80
40
40
80
120
160
0.1 0
CASE TEMPERATURE
Tc
(C)
DRAIN-SOURCE VOLTAGE
VDS
(V)
CAPACITANCE VDS
10000 5
Vth Tc
(pF)
1000
Ciss
CAPACITANCE C
Coss 100
Crss
100
DRAIN-SOURCE VOLTAGE
VDS
(V)
CASE TEMPERATURE
Tc
(C)
PD Tc VDS (V)
60 500
400
16
40
DRAIN-SOURCE VOLTAGE
300 200 200 COMMON SOURCE VGS 100 ID = 8 A Tc = 25C PULSE TEST 0 0 10 20 30 40
12
20
0 0
40
80
120
160
0 50
CASE TEMPERATURE
Tc
(C)
Qg
(nC)
2006-11-06
2SK3561
Duty=0.5 0.2
0.1
0.001 10
100
10
100
10
PULSE WIDTH tw
(s)
EAS Tch
10
ID max (CONTINUOUS) * 1 ms *
100 s *
400
300
200
DC OPERATION Tc = 25C
100
0.1
CURVES LINEARLY
0 25
50
75
100
125
150
INCREASE
TEMPERATURE.
0.01 1
10
DRAIN-SOURCE VOLTAGE
VDS
(V)
15 V 15 V
WAVE FORM
AS = 1 B VDSS L I2 B 2 V VDSS DD
2006-11-06
2SK3561
030619EAA
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
2006-11-06