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Philips Semiconductors B.V.

Gerstweg 2, 6534 AE Nijmegen, The Netherlands

Report nr. Author Date Department

: RNR-T45-96-B-770 : T. Buss : 20-Jan-00 : P.G. Transistors & Diodes, Development

900MHz LOW NOISE AMPLIFIER WITH THE BFG410W

Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG410W Double Poly RF-transistor. The LNA is designed for a frequency f=900MHz. The Noise Figure NF~1.4dB at f=900MHz and the gain S21 ~14dB.

Appendix I: 900MHz LNA circuit Appendix II: Printlayout and list of used components & materials Appendix III: Results of simulations and measurements

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Philips Semiconductors B.V.
Introduction: With the new Philips silicon bipolar double poly BFG400W series, it is possible to design low noise amplifiers for high frequency applications with a low current and a low supply voltage. These amplifiers are well suited for the new generation low voltage high frequency wireless applications. In this note a first study of such an amplifier will be given. This amplifier is designed for a working frequency of 900MHz.

Designing the circuit: The circuit is designed to show the following performance: transistor: BFG410W Vce=2V, Ic =2mA, VSUP~3.3V freq=900MHz Gain~15dB NF<=1.3dB VSWRi<1:2 VSWRo<1:2 In the simulations the effect of extra RF-noise caused by the SMA-connectors was omitted, so in the practical situation the NF is ~0.1dB higher. This LNA is not optimised for the highest IP3. The IP3 can be optimised by: I. an extra series RC-decoupling of the base to the ground II. increasing IC With the solution I. two extra components are necessary, and with solution II, the Noise Figure of the LNA increases and the optimum source impedance also. The in- and outputmatching is realised with a LC-combination. Also extra emitter-inductance on both emitterleads (-strips) are used to improve the matching and the Noise Figure. Designing the layout: A lay-out has been designed with HP-MDS. Appendix II contains the printlayout. Measurements: Simulations (with realistic RF-models of al used parts) and measurements of the total circuit (epoxy PCB) are done (Appendix III).

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Philips Semiconductors B.V.
Appendix I: Schematic of the circuit

C6

R5 R1

C3

C4

+VSUP C2 Coil_1 R2 OUT 50 IN 50 C1 BFG410W S4: S4 S4 D1 W2 Figure 1: LNA circuit 900MHz LNA Component list: Component: Value: R1 R2 R3 R4 R5 C1 C2 C3 C4 C5 C6 C7 Coil_1 Coil_2 s4 47 120 22 560 100 2.2 27 27 1 1.5 100 0.47 12 15 (next K pF pF pF nF pF nF pF nH nH table) C5 C7 W1 L1 L2 L3 R3 Coil_2 R4

Comment: Bias. Better RF-stability (K>1). RF-block. Cancelling HFE-spread. To improve IP3-performance Input match. 900MHz short. 900MHz short. RF-short Output match. To improve IP3-performance Better RF-stability (K>1). Input match. Output match. Emitter induction: -stripline + via

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Philips Semiconductors B.V.
S4 Emitter induction (-stripline + via): Name Dimension Description L1 2.0mm length -stripline; Z0 ~48 (PCB: r ~4.6, H=0.5mm) L2 1.0mm length interconnect stripline and via-hole area L3 1.0mm length via-hole area W1 0.5mm width -stripline W2 1.0mm width via-hole area D1 0.4mm diameter of via-hole

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Philips Semiconductors B.V.
Appendix II: Printlayout and list of used components & materials

RFin R5 C6 L1

C1 C7 C5 RFout

R2 C2 Vsup R4 R3 C3 C4 R1 L2

Figure 2: 900MHz LOW NOISE AMP. PRINT LAYOUT

Component list: Component: R1 R2 R3 R4 R5 C1 C2 C3 C4 C5 C6 C7 L1 L2 PCB

Value: 47 K 120 22 560 100 2.2 pF 27 pF 27 pF 1 nF 1.5 pF 100 nF 0.47 pF 12 nH 15 nH r~4.6, H=0.5mm

size: 0603 Philips 0603 Philips 0603 Philips 0603 Philips 0805 Philips 0603 Philips 0603 Philips 0603 Philips 0603 Philips 0603 Philips 0805 Philips 0603 Philips 0805CS Coilcraft 0805CS Coilcraft FR4

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Philips Semiconductors B.V.
Appendix III: Results of simulations en measurements BFG410W, VCE=2V, IC=2mA: Simulation (HP-MDS): 2 |S21| [dB] 14.6 VSWRi 2.0 VSWRo 2.4 Noise Figure [dB] 1.3 IP3 [dBm] (input) *)

Measurements PCB: 14.0 1.9 2.3 *) 1.4 -9

Comment:

f=100KHz

: The Noise Figure of the PCB is higher than the simulations (~0.1 dB). This is caused by the influence of the SMA-connectors and the microstrips on the epoxi PCB.
CMP230 MSVIA W=Wvia OD=0.4 SUBST=s10mil mm

W=Wvia L=Lvia

CMP231 MSTL

SUBST=s10mil

L=1 nH CMP265 L

CMP427 R_nor

1 2

R1=100
L=1 nH CMP417 L SUBST=s10mil OD=0.4 W=Wvia mm

CMP263 C

model cap. 1nF

C=1 nF

CMP286 MSVIA

LOW NOISE AMP. WITH BFG425W@2V/5mA

CMP264 R CMP287 MSTL L=Lvia W=Wvia CMP418 C C=100 nF SUBST=s10mil R=0.3 OH

R1=22 OH
1 2 CMP289 cmc_0603_phil CMP419 R W=0.5 mm L=0.5 mm SUBST=s10mil 1 2 CMP236 MSTL CMP405 MSTL SUBST=s10mil L=3 mm W=0.5 mm CMP409 MSTL CMP430 R_nor CMP406 MSTL CMP429 R_nor

R1=560 OH
1 2

CMP235 L

L=100 uH

AGROUND

Ccmc=Contkop

R=0.3 OH CMP428 R_nor

R1=47k
CMP399 coilcraft_l1008_cs

smd
Lx=Lin
W=W3 L=L3 SUBST=s10mil

Lx=Lout

CMP203 cmc_0603_phil

DATA=BFG425W_5mA.DATA.,FREQ=freq SUBST=s10mil L=0.5 mm W=0.5 mm

smd
CMP394 coilcraft_l1008_cs SUBST=s10mil L=0.5 mm W=0.5 mm

W=Wvia L=Lvia SUBST=s10mil

CMP266 MSVIA

Ccmc=Contkop
CMP227 MSTL

SB1/BFG425W@2V/5mA
CMP257 TWOPORT CMP383 MSTL

SUBST=s10mil OD=0.4 mm W=Wvia

W=W50_Ohm L=6 mm SUBST=s10mil

CMP281 cmc_0603_phil

W=W3CMP408 MSTL L=L3 SUBST=s10mil

R1=Rout
1 2

CMP358 MSTL

CMP197 cmc_0603_phil

W=W50_Ohm L=6 mm SUBST=s10mil

1 Ccmc=Cin
CMP18 PORT_SPAR CMP401 PORTNUM=1 MSTL R=50 JX=0 EQUATION EQUATION EQUATION EQUATION AGROUND EQUATION EQUATION CMP359 MSTL

CMP431 SUBST=s10mil R_nor L=L4 W=W4 CMP438 cmc_0603_phil

SUBST=s10mil L=0.5 mm W=0.5 mm

Ccmc=Cout
CMP403 MSTL CMP270 PORT_SPAR PORTNUM=2 R=50 JX=0

vswri=(1+mag(s11))/(1-mag(s11)) vswro=(1+mag(s22))/(1-mag(s22)) Cin=(4.7) pF Cout=(2.7) pF Lin=(10) nH Lout=(10) nH

CMP350 MSTL W=0.5 L=L1 SUBST=s10mil mm

CMP351 MSTL W=0.5 L=L1 SUBST=s10mil mm

Ccmc=Cce

AGROUND

EQUATION Contkop=(27) pF EQUATION EQUATION EQUATION EQUATION L1=(2.5) mm L2=(1) mm L3=(0.5) mm L4=(0.2) mm

CMP5 MSSUBSTRATE SUBST=s10mil ER=4.6 MUR=1 COND=5.8e07 ROUGH=10 um TAND=0.02

EQUATION W3=(0.5) mm EQUATION W4=(0.5) mm

W2=0.5 mm CMP250 MSTAPER CMP252 MSTAPER

W2=0.5 mm HU=1.0E+3 m T=35um H=0.5mm W1=Wvia_e SUBST=s10mil L=L2

EQUATION Lvia=(0.25) mm EQUATION Wvia=(1) mm EQUATION Wvia_e=(1) mm EQUATION W50_Ohm=(0.9) mm EQUATION Rout=(27) EQUATION Cce=(0.47) pF

SUBST=s10mil W1=Wvia_e L=L2

CMP180 MSVIA W=Wvia_e OD=0.4 mm SUBST=s10mil

CMP210 MSVIA W=Wvia_e OD=0.4 mm SUBST=s10mil