AlGaN/GaN vs.

MgZnO/ZnO heterostructure

Insulated gate AlGaN/GaN HFET, similar to a doublediffused metal-oxide semiconductor (DMOS) structure.

The 2DEG is located near the MgZnO/ZnO interface in a Znpolar ZnO substrate (sample A) or in ZnO homoepitaxial layer (500nm thick) (sample B).

HEMT heterostructure AlGaN/GaN has been realized

by the formation of two dimensional electron gas (2DEG) via electric polarization effects, the polarization difference between two heterojunction materials. Like GaN, ZnO exhibits similar effect in MgZnO/ZnO heterostructure but with several advantages over AlGaN/GaN, including a higher saturation velocity, a lower lattice mismatch, and the capability for bulk growth. With increasing MgZnO thickness, the sheet resistance reduces rapidly and then saturates. The enhancement of the interfacial polarization effect becomes stronger, corresponding to a larger amount of resistance reduction, when the Mg content in the cap layer increases.

Optical microscope image measurement configurations

of

Hall-bar

devices

and

Transport properties of MgZnO/ZnO heterostructure

v The electron density (n) dependence of electron mobility () for samples A and sample B at temperatures of 0.06K, 2K and 10K, indicated by red, blue and black symbols, respectively. v Linear gate voltage dependence of n for each sample. v MgZnO/ZnO systems are therefore promising in high electron mobility transistor (HEMT) applications.

Electrical properties of modulation-doped rf-sputtered polycrystalline MgZnO/ZnO heterostructures

--- H-A Chin et al. J. Phys. D: Appl. Phys. 44 (2011) 455101
q With 2DEG introduction by the polarization effects, modulation doping enhances the electrical properties in MgZnO/ZnO heterostructures of highquality crystals. q The first MgzZn1-zO thin layer is the barrier

layer, allows the carriers to transfer from the Mgx-0.025Zn1-x-0.025O:Al0.o5 modulation doping layer to

the MgzZn1-zO/ZnO interface. q The second MgzZn1-zO layer is the capping layer, pins the Fermi level of the heterostructure for higher transferring possibility. q Bilayer heterostructure composed of a thin MgzZn1-zO capping layer deposited on top of the ZnO thin film.

Results
When x in Mgx-0.025 Zn1-x-0.025O:Al0.025 increases, the sheet resistance of the heterostructure decreases and the sheet carrier density increases. When the Mg content is raised, the band gap of MgZnO :Al increases and the energy difference between the donor level in the MgZnO :Al layer Moreover, the conduction band edge of ZnO at the MgzZn1-zO/ZnO interface becomes larger, which makes the carriers have greater tendency to transfer from the Mgx-0.025Zn0.975-zO:Al0.05 modulation doping layer into the MgzZn1-zO/ZnO interface, i.e. the 2DEG region.

At a low Mg content the carrier transferring from the modulation doping layer can significantly contribute to the electrical conductivity and carrier concentration. While at a high Mg content the large band gap of the barrier layer reduces the carrier transferring probability but the electrical properties are compensated by the large polarization effect.

Continue
The sheet carrier density remains nearly constant throughout the whole temperature range, indicating that the carrier is 2DEG and not thermally activated. A slight decrease in mobility at low temperatures indicates the dominant scattering mechanism is roughness scattering together with minor impurity and alloy scattering

The simulation result indicates that the carrier distribution shift towards the modulation doping layer slightly as the Mg content in the modulation doping layer increases. Therefore, the slight decrease in mobility at low temperatures is attributed to the impurity scattering and alloy scattering from the modulation doping layer.

Application
In

recent TOYOTA hybrid vehicles (HV) system, the battery voltage is raised to power source voltage 650V by a voltage booster (DC-DC converter) and then supplied to the motor through the inverter. The DC-DC converter and the inverter control the electric power over 10kW.

Si-IGBTs are used in these high power modules. Other power electronics modules control the middle and low power, in which Si power MOSFETs are used as the power devices. Main problem of the high power modules is high electric power loss. On the other hand, for the middle and low power modules, of which power level is lower than 5kW, required breakdown voltage is lower than 600V.

Fundamental Sin-wave superimposed on PWM square wave.

Switches( S1,S2, S3,S4) are controlled by logic controller for creating desired frequency PWM wave form.