2SJ412

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV)

2SJ412
DC-DC Converter, Relay Drive and Motor Drive Applications
4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 (typ.) High forward transfer admittance: |Yfs| = 7.7 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 100 V) Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Absolute Maximum Ratings (Ta = 25C)

Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 100 100 20 16 64 60 292 16 6 150 55 to 150 Unit V V V A W mJ A mJ C C

JEDEC JEITA TOSHIBA

2-10S1B

Pulse (Note 1)

Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

Weight: 1.5 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
JEDEC
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.08 83.3 Unit C/W C/W

2-10S2B

JEITA TOSHIBA

Weight: 1.5 g (typ.)

Note1:

Ensure that the channel temperature does not exceed 150C.

Note 2: VDD = 25 V, Tch = 25C (initial), L = 1.84 mH, RG = 25 , IAR = 16 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature This transistor is an electrostatic-sensitive device. Please handle with caution.

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Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Gate-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS 10 V 0V ID = 8 A RL = 6.25 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 6 A VGS = 10 V, ID = 6 A VDS = 10 V, ID = 6 A Min 100 0.8 4.5 VOUT 30 ns 18 Typ. 0.25 0.15 7.7 1100 210 440 18 Max 10 100 2.0 0.32 0.21 Unit A A V V S pF pF pF

Turn-on time Switching time Fall time

ton

tf

50

VDD 50 V Duty 1%, tw = 10 s 65

Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (miller) charge

toff

Qg Qgs Qgd VDD 80 V, VGS = 10 V, ID = 16 A

48 29 19

nC nC nC

Source-Drain Rating and Characteristics (Ta = 25C)

Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR Test Condition Min Typ. Max 16 Unit A

IDRP VDSF trr Qrr

IDR = 16 A, VGS = 0 V IDR = 16 A, VGS = 0 V dIDR/dt = 50 A/s

160 0.5

64 1.7

A V ns C

Marking

J412

Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

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ID VDS
5 4 4 8 3 16 20 8

ID VDS
Common source Tc = 25C Pulse test 6 4.0 10 12 3.5 8 3 4 VGS = 2 V

(A)

Drain current

2.5 2

Drain current

Common source Tc = 25C Pulse test

ID

ID

(A)

10

2.5 VGS = 2 V

0 0

0.4

0.8

1.2

1.6

2.0

0 0

10

Drain-source voltage

VDS (V)

Drain-source voltage

VDS (V)

ID VGS
10 Common source VDS = 10 V Pulse test 25 Tc = 55C 6 100 3.2

VDS VGS
Common source Tc = 25C Pulse test

(A)

VDS Drain-source voltage

(V)
2.4

Drain current

ID

1.6

ID = 8 A

0.8

4 2

0 0

0 0

12

16

20

Gate-source voltage

VGS

(V)

Gate-source voltage

VGS

(V)

|Yfs| ID
(S)
30 Common source VDS = 10 V Pulse test 10 2.0 Common source 1.0 0.5 0.3 Tc = 25C Pulse test

RDS (ON) ID

|Yfs|

Forward transfer admittance

Tc = 55C

Drain-source on resistance RDS (ON) ()

5 3

100

25

VGS = 4 V 10

0.1

0.05 1 0.3 1.0 3 10 20 0.03 0.1 0.3 1.0 3 10 20

Drain current

ID (A)

Drain current

ID (A)

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RDS (ON) Tc
RDS (ON) ()
0.5 Common source Pulse test 0.4 4 30 Common source Tc = 25C

IDR VDS

Drain reverse current IDR (A)

ID = 8 A 8

Pulse test 10 5 3 VGS = 10 V

Drain-source on resistance

0.3 2, 4 0.2 VGS = 4 V 2

3 1.0 5 1 0.2 0.4

0.1 VGS = 10 V 0 80

0.5 0 40 80 120 160 0.3 0

0, 1 0.6 0.8 1.0

40

Case temperature

Tc

(C)

Drain-source voltage

VDS (V)

Capacitance VDS
5000 3000 Ciss 4

Vth Tc
Common source VDS = 10 V ID = 1 mA Pulse test

Vth (V) Gate threshold voltage

100

(pF)

1000 500 300 Common source 100 50 30 0.1 VGS = 0 V f = 1 MHz Tc = 25C 0.3 1 3 10

Capacitance

Coss

Crss

30

Drain-source voltage

VDS (V)

0 80

40

40

80

120

160

Case temperature

Tc

(C)

PD Tc
80 100

Dynamic Input/Output Characteristic

Common source ID = 16 A Tc = 25C Pulse test 20

(W)

(V)

80

16

PD

VDS

60

Drain power dissipation

Drain-source voltage

40

20 V 40 40 V 8

20

20 VGS 0 0

0 0

40

80

120

160

20

40

60

80

0 100

Case temperature

Tc

(C)

Total gate charge Qg (nC)

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Gate-source voltage

60

VDS VDD = 80 V

12

VGS (V)

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rth tw
Normalized transient thermal impedance rth (t)/Rth (ch-c)
3

1 0.5 0.3 Duty = 0.5 0.2 0.1 0.1 0.05 0.03 0.01 0.01 10 Single pulse 100 1m 10 m 100 m 0.05 0.02 Duty = t/T Rth (ch-c) = 2.08C/W 1 10 PDM t T

Pulse width

tw

(s)

Safe Operating Area

300 500

EAS Tch

IC max (pulsed)* 100 s* ID max (continuous) 1 ms* 10 ms*

(mJ) EAS Avalanche energy

100 50

400

(A)

30

300

ID

10 5 3 DC operation Tc = 25C

Drain current

200

100

1 *: Single nonrepetitive pulse Tc = 25C 0.3 Curves must be derated linearly with increase in temperature. 0.5 0.1 0.3 1 3 10 0 25 VDSS max 30 100 300

50

75

100

125

150

Channel temperature

Tch

(C)

Drain-source voltage

VDS (V)

15 V 15 V

BVDSS IAR VDD VDS

TEST CIRCUIT RG = 25 VDD = 25 V, L = 1.84 mH

WAVE FORM

1 2 B VDSS AS = LI B 2 VDSS VDD

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RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.

030619EAA

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.

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