Vous êtes sur la page 1sur 3

MTP3055V

May 1999

MTP3055V
N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies).

Features
12 A, 60 V. RDS(ON) = 0.150 @ VGS = 10 V Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating.

'

'

72

$EVROXWH 0D[LPXP 5DWLQJV


6\PERO
W'66 W*66 D' BhrTprWyhtr 9hv8r 8v Qyrq Q' 9hvTprWyhtr

6
U 2!$8yrurvrrq

&

3DUDPHWHU

5DWLQJV
%

8QLWV
W W 6

! !

"&

UhyQr9vvhv5U&2!$ 8 9rhrhir!$ 8

#' "! %$ &$

X X 8

U-U67*

PrhvthqThtrEpvUrrhrShtr

7KHUPDO &KDUDFWHULVWLFV
S S

-&

UurhySrvhprEpv8hr UurhySrvhprEpv6ivr
Ir 

" " %!$

8X 8X

-$

3DFNDJH 2XWOLQHV DQG 2UGHULQJ ,QIRUPDWLRQ


'HYLFH 0DUNLQJ
HUQ"$$W

'HYLFH

3DFNDJH ,QIRUPDWLRQ
ShvyUir

4XDQWLW\
#$v

HUQ"$$W

9vrhqhshpvtpriwrppuhtrvuvvsvphv
1999 Fairchild Semiconductor Corporation MTP3055V Rev. A

MTP3055V

(OHFWULFDO &KDUDFWHULVWLFV
6\PERO
'66

U 2!$8yrurvrrq

&

3DUDPHWHU
TvtyrQyr9hvTpr 6hyhpur@rt

7HVW &RQGLWLRQV
Ir!

0LQ

7\S 0D[ 8QLWV


&! E

'5$,16285&( $9$/$1&+( 5$7,1*6


D$5

W''2!$WD'2

!6

Hhv9hvTpr6hyhpur8r

2II &KDUDFWHULVWLFV
7W'66 9hvTpr7rhxq Wyhtr W*62WD'2!$

%

7W'66 U D'66 D'66 D*66)

7rhxqWyhtrUrrhr 8rssvpvr arBhrWyhtr9hv8r arBhrWyhtr9hv8r Bhr7qGrhxhtr8r Ahq

D'2!$

6Srsrrprq!$8

%"

W 8

W'62%WW*62W W'62%WW*62WU-2 W*62!WW'62W $ 8

6 6
6

 

D*665

Bhr7qGrhxhtr8r Srrr

W*62!WW'62W



2Q &KDUDFWHULVWLFV
W*6 WK

Ir!

BhrUuruyqWyhtr BhrUuruyqWyhtr Urrhr8rssvpvr Thvp9hvTpr PSrvhpr

W'62W*6D'2!$ D'2!$

" $

W W 8

W*6 WK U S'6 RQ

6Srsrrprq!$8

W*62

WD'2%6



$

W T

W'6 RQ t)6

9hvTprPWyhtr AhqUhpqphpr

D'2

!6W*62

W #

!!

W'62&WD'2%6

'\QDPLF &KDUDFWHULVWLFV
8LVV 8RVV 8UVV D8hhpvhpr P8hhpvhpr SrrrUhsr8hhpvhpr W'62!$WW*62W s2 HC $ ' $ A A A

6ZLWFKLQJ &KDUDFWHULVWLFV
G RQ U G RII I RJ RJV RJG UP9ryhUvr UPSvrUvr UPss9ryhUvr UPssAhyyUvr UhyBhr8uhtr BhrTpr8uhtr Bhr9hv8uhtr

Ir!

W''2"WD'2 W*62

!6

8 8 8

WS*(12(

"' ' #$

W'62#'W D'2 !6W*62 W !" !%

&

'UDLQ6RXUFH 'LRGH &KDUDFWHULVWLFV DQG 0D[LPXP 5DWLQJV


D6 D60 W6' Hhv8v9hvTpr9vqrAhq8r Ir! HhvQyrq9hvTpr9vqrAhq8rIr! 9hvTpr9vqrAhq Wyhtr W*62WD62 !6Ir! ! "& % 6 6 W

Notes: 1. RJA is the sum of the juntion-to-case and case-to-ambient thermal resistance. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

MTP3055V Rev. A

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series
DISCLAIMER

FAST FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak

MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series

SILENT SWITCHER UHC SMART START UltraFET SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation

STAR*POWER is used under license

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

Rev. H5

Vous aimerez peut-être aussi