Data Sheet 1 V1.

1, 2007-05-29


Smart High-Side Power Switch
BTS428L2
Smart High-Side Power Switch
One ChanneI: 60m
Status Feedback
Product Summary Package

On-state Resistance R
ON
60m
Operating Voltage V
bb(on)
4.75...41V
Nominal load current
L(NOM)
7.0A
Current limitation
L(SCr)
17A

GeneraI Description
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SPMOS

technology.
Providing embedded protective functions
AppIications
C compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
Very low standby current
CMOS compatible input
mproved electromagnetic compatibility (EMC)
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Wide operating voltage range
Logic ground independent from load ground
Protection Functions
Short circuit protection
Overload protection
Current limitation
Thermal shutdown
Overvoltage protection (including load dump) with external
resistor
Reverse battery protection with external resistor
Loss of ground and loss of V
bb
protection
Electrostatic discharge protection (ESD)
Diagnostic Function
Diagnostic feedback with open drain output
Open load detection in ON-state
Feedback of thermal shutdown in ON-state

TO 252-5-11



BIock Diagram
Vbb
Logic
with
protection
functions
N
ST
GND
Load
PROFET
OUT
AEC qualified
Green product (RoHS compliant)
PG-TO-252

Data Sheet 2 V1.1, 2007-05-29


Smart High-Side Power Switch
BTS428L2
FunctionaI diagram



























Pin Definitions and Functions


Pin

SymboI Function
1 GND Logic ground
2 N
Input, activates the power switch in
case of logical high signal
3 V
bb

Positive power suppIy voItage
The tab is shorted to pin 3
4 ST Diagnostic feedback, low on failure
5 OUT Output to the load
Tab V
bb

Positive power suppIy voItage
The tab is shorted to pin 3



Pin configuration
(top view)
Tab = V
BB
1 2 (3) 4 5
GND IN ST OUT
OUT
GND
overvoltage
protection




logic
internal
voltage supply


ESD
temperature
sensor
clamp for
inductive load
gate
control
+
charge
pump
current limit
Open load
detection ST
VBB
LOAD
IN
PROFET

Data Sheet 3 V1.1, 2007-05-29


Smart High-Side Power Switch
BTS428L2
Maximum Ratings at Tj = 25 C unless otherwise specified
Parameter SymboI VaIues Unit
Supply voltage (overvoltage protection see page 4) V
bb
43 V
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150C
V
bb
24 V
Load dump protection
1
)
V
LoadDump
= V
A
+ V
s
, V
A
= 13.5 V
R

2
)
= 2 , R
L
= 4.0 , t
d
= 200 ms, N= low or high
V
Load dump
3
)
60 V
Load current (Current limit, see page 5) I
L
self-limited A
Operating temperature range
Storage temperature range
T
j

T
stg

-40 ...+150
-55 ...+150
C
Power dissipation (DC), T
C
25 C P
tot
75 W
Maximal switchable inductance, single pulse
V
bb
= 12V, T
j,start
= 150C, T
C
= 150C const.
(See diagram on page 9) I
L(SO)
= 7 A, R
L
= 0 ; E
4
)
AS
=0.19J:


Z
L
5.6 mH
Electrostatic discharge capability (ESD) N:
(Human Body Model) ST:
out to all other pins shorted:
acc. ML-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5k; C=100pF
V
ESD
1.0
4.0
8.0
kV
nput voltage (DC) V
N
-10 ... +16 V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 8
I
N

I
ST

2.0
5.0
mA
ThermaI Characteristics

Parameter and Conditions SymboI VaIues Unit
min typ max
Thermal resistance chip - case:
junction - ambient (free air):
device on pcb
5
)
:
R
thJC

R
thJA
--
--
--
--
--
42
1.67
75
--
K/W


1
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended).
2
)
R

= internal resistance of the load dump test pulse generator

3
)
V
Load dump
is setup without the DUT connected to the generator per SO 7637-1 and DN 40839
4
)
E
AS
is the maximum inductive switch-off energy
5
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70m thick) copper area for V
bb

connection. PCB is vertical without blown air.

Data Sheet 4 V1.1, 2007-05-29


Smart High-Side Power Switch
BTS428L2
EIectricaI Characteristics

Parameter and Conditions SymboI VaIues Unit
at Tj =-40...+150C, V
bb
= 12 V unless otherwise specified
min typ max

Load Switching CapabiIities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 2 A; V
BB
7V T
j
=25 C:
T
j
=150 C:
see diagram, page 10

R
ON


--

50
100
60
120
m
Nominal load current, (pin 3 to 5)
SO 10483-1, 6.7:V
ON
=0.5V, T
C
=85C

I
L(SO)


5.8

7.0 -- A
Output current (pin 5) while GND disconnected or
GND pulled up
6
)
, Vbb=30 V, V
N
= 0,
see diagram page 8
I
L(GNDhigh)
-- -- 2 mA
Turn-on time N to 90% V
OUT
:
Turn-off time N to 10% V
OUT
:
R
L
= 12 ,
t
on

t
off

30
30
100
100
200
200
s
Slew rate on
10 to 30% V
OUT
, R
L
= 12 ,
dV /dt
on
0.1 -- 1 V/s
Slew rate off
70 to 40% V
OUT
, R
L
= 12 ,
-dV/dt
off
0.1 -- 1 V/s

Operating Parameters

Operating voltage T
j
=-40
T
j
=+25...+150C:
V
bb(on)
4.75 --
--
41
43
V
Overvoltage protection
7
)
T
j
=-40C:
I
bb
=40 mA T
j
=25...+150C:
V
bb(AZ)
41
43
--
47
--
52
V
Standby current (pin 3)
8)
T
j
=-40...+25C:
V
N
=0; see diagram on page 10 T
j
= 150C:
I
bb(off)
--
--
5
--
9
25
A
Off-State output current (included in I
bb(off)
)
VN=0

I
L(off)
-- 1 10 A
Operating current
9
)
, V
N
=5 V

I
GND
-- 0.8 1.5 mA

6
)
not subject to production test, specified by design
7
)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended. See also VON(CL) in table of protection functions and
circuit diagram page 8.
8
) Measured with load
9
)
Add I
ST
, if I
ST
> 0, add I
N
, if V
N
>5.5 V

Data Sheet 5 V1.1, 2007-05-29


Smart High-Side Power Switch
BTS428L2
Parameter and Conditions SymboI VaIues Unit
at Tj =-40...+150C, V
bb
= 12 V unless otherwise specified
min typ max

Protection Functions
10
)

Current limit (pin 3 to 5) I
L(lim)

(see timing diagrams on page 12) T
j
=-40C:
T
j
=25C:
T
j
=+150C:
21
17
12
28
22
16
36
31
24
A
Repetitive short circuit shutdown current limit I
L(SCr)

T
j
= T
jt
(see timing diagrams, page 12) -- 17 -- A
Thermal shutdown time
11
T
j,start
= 25C:
(see timing diagrams on page 12)
t
off(SC)
-- 7.5 -- ms
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL)
I
L
= 40 mA:

V
ON(CL)

41
43

47 52 V
Thermal overload trip temperature T
jt
150 -- -- C
Thermal hysteresis T
jt
-- 10 -- K
Reverse battery (pin 3 to 1)
12
)
-V
bb
-- -- 32 V
Reverse battery voltage drop (Vout

> Vbb)
13
)
I
L
= -2 A T
j
=150 C:

-V
ON(rev)


--

600 -- mV

Diagnostic Characteristics

Open load detection current
(on-condition)
I
L (OL)
10 -- 500 mA



10
)
ntegrated protection functions are designed to prevent C destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
11
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70m thick) copper area for V
bb

connection. PCB is vertical without blown air.
12
)
Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! nput and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
13
)
not subject to production test, specified by design

Data Sheet 6 V1.1, 2007-05-29


Smart High-Side Power Switch
BTS428L2
Parameter and Conditions SymboI VaIues Unit
at Tj =-40...+150C, V
bb
= 12 V unless otherwise specified
min typ max

Input and Status Feedback
14
)


nput resistance
see circuit page 8
R

2.5 3.5 6 k
nput turn-on threshold voltage V
N(T+)
1.7 -- 3.2 V
nput turn-off threshold voltage V
N(T-)
1.5 -- -- V
nput threshold hysteresis V
N(T)
-- 0.5 -- V
Off state input current (pin 2), V
N
= 0.4 V I
N(off)
1 -- 50 A
On state input current (pin 2), V
N
= 5 V I
N(on)
20 50 90 A
Delay time for status with open load after switch off
(see timing diagrams on page 12)
t
d(ST OL4)
100 520 900 s
Status output (open drain)
Zener limit voltage I
ST
= +1.6 mA:
ST low voltage I
ST
= +1.6 mA:
V
ST(high)

V
ST(low)

5.4
--
6.1
--
--
0.4
V



14
)
f a ground resistor R
GND
is used, add the voltage drop across this resistor.

Data Sheet 7 V1.1, 2007-05-29


Smart High-Side Power Switch
BTS428L2

Truth TabIe
Input Output Status

IeveI IeveI BTS 428L2
NormaI
operation
L
H
L
H
H
H
Open Ioad L
H
Z
H
H
L
Overtem-
perature
L
H
L
L
H
L


L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 12)

Data Sheet 8 V1.1, 2007-05-29


Smart High-Side Power Switch
BTS428L2
Terms
PROFET
V
N
ST
OUT
GND
bb
V
ST
V
N

ST

N
V
bb

bb

L
V
OUT

GND
V
ON
1
2
4
3
5
R
GND



Input circuit (ESD protection)

N
GND

R
ESD-ZD

The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended

Status output

ST
GND
ESD-
ZD
+5V
R
ST(ON)

ESD-Zener diode: 6.1 V typ., max 5.0 mA; R
ST(ON)
< 375
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.
Inductive and overvoItage output cIamp

+ V
bb
OUT
GND PROFET
V
Z
V
ON

OvervoIt. and reverse batt. protection
+ V
bb
N
ST
ST
R
GND
GND
R
Signal GND
Logic
PROFET
V
Z2

R
V
Z1
Load GND
Load
R
OUT
ST
R
+ 5V

V
Z1
= 6.1 V typ., V
Z2
= 47 V typ., R
GND
= 150 ,
R
ST
= 15 k, R

= 3.5 k typ.
n case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active

Open-Ioad detection in on-state
Open load, if V
ON
< R
ON

L(OL)
; N high

Open Ioad
detection
Logic
unit
+ V
bb
OUT
ON
V
ON

GND disconnect

PROFET
V
N
ST
OUT
GND
bb
V
bb
1
2
4
3
5
V
N
V
ST
V
GND
Any kind of load. n case of nput=high is VOUT VN - VN(T+) .
Due to VGND >0, no VST = low signal available.

Data Sheet 9 V1.1, 2007-05-29


Smart High-Side Power Switch
BTS428L2
GND disconnect with GND puII up

PROFET
V
N
ST
OUT
GND
bb
V
bb
1
2
4
3
5
V
GND
V
N
V
ST

Any kind of load. f VGND > VN - VN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive
Ioad
PROFET
V
N
ST
OUT
GND
bb
V
bb
1
2
4
3
5
high

For inductive load currents up to the limits defined by Z
L

(max. ratings and diagram on page 9) each switch is
protected against loss of V
bb
.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
Inductive Load switch-off energy
dissipation
PROFET
V
N
ST
OUT
GND
bb
=
E
E
E
E
AS
bb
L
R
E
Load
L
R
L
{ Z
L

Energy stored in load inductance:
E
L
=
1
/
2
L
2
L

While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=

V
ON(CL)
i
L
(t) dt,
with an approximate solution for R
L
> 0 :
E
AS
=

L
L
2R
L
(V
bb

+ |V
OUT(CL)
|) OQ(1+

L
R
L
|V
OUT(CL)
|
)

Maximum aIIowabIe Ioad inductance for
a singIe switch off
L f (I
L

); T
j,start

= 150C,T
C

= 150C const.,
V
bb

= 12 V, R
L

= 0
Z
L
[mH]
0.1
1
10
100
1000
2 7 12 17

I
L
[A]

Data Sheet 10 V1.1, 2007-05-29


Smart High-Side Power Switch
BTS428L2
Typ. on-state resistance
R
OA
f (J
bb
,1
j
);
L
= 2 A, N

= high

R
ON
[m]
175
150
125
100
75
50
25
0
3 5 7 9 30 40
Tj=150C
25C
-40C
V
bb
[V]
Typ. standby current
I
bb(off)
f (1
j
); V
bb
= 9...34 V, N1,2 = low

bb(off)
[A]
0
5
10
15
20
25
30
35
40
45
-50 0 50 100 150 200
T
j
[C]



Data Sheet 11 V1.1, 2007-05-29


Smart High-Side Power Switch
BTS428L2
Figure 1a: V
bb
turn on:
OUT
V
V
bb
t
ST open drain
N

proper turn on under all conditions



Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition:
N
t
V
OUT

L
t
t
on
off
90%
dV/dton
dV/dtoff
10%



Figure 2b: Switching a lamp,

N
ST
OUT
L
t
V

The initial peak current should be limited by the lamp and not by th
current limit of the device.


Figure 2c: Switching an inductive load
N
ST
L
t
V

OUT

L(OL)
*) if the time constant of load is too large, open-load-status may
occur


Data Sheet 12 V1.1, 2007-05-29


Smart High-Side Power Switch
BTS428L2

Figure 3a: Short circuit
shut down by overtemperature, reset by cooling
other channel: normal operation
t

ST
N
L
L(SCr)

L(lim)
t
off(SC)

Heating up of the chip may require several milliseconds, depending
on external conditions


Figure 4a: Overtemperature:
Reset if T
j
<T
jt

N
ST
OUT
J
t
V
T



Figure 5a: Open load: detection in ON-state, open
load occurs in on-state

N
ST
OUT
L
t
V

open
normal normal
t
d(ST OL)
t
d(ST OL)

td(ST OL) = 10 s typ.

Figure 5b: Open load: turn on/off to open load
N
ST
L
t

t
d(STOL4)



Data Sheet 13 V1.1, 2007-05-29


Smart High-Side Power Switch
BTS428L2
Package Outlines
Figure 1 PG-TO-252 (Plastic Dual Small Outline Package) (RoHS-compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
1) Includes mold flashes on each side.
4.56
0.25 M A
6.5
5.7 MAX.

0
.
1
per side
0.15 MAX.
-
0
.
2
6
.
2
2

0
.
5
9
.
9
8(
4
.
2
4
)
1
A
1.14
5 x 0.6

0
.
1
5
0
.
8
0.1
+0.15
-0.05
0.1
B
-0.04
+0.08
0...0.15
0
.
5
1

M
I
N
.
0.5
B
2.3
-0.10
0.5
+0.05
-0.04
+0.08
(5)
-0.01
0.9
+0.20
B
1)
All metal surfaces tin plated, except area of cut.
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page Products: http://www.infineon.com/products. Dimensions in mm

Data Sheet 14 V1.1, 2007-05-29


Smart High-Side Power Switch
BTS428L2
Revision History
Version Date Changes
V1.1 2007-05-29 Creation of the green datasheet.
First page :
Adding the green logo and the AEC qualified
Adding the bullet AEC qualified and the RoHS compliant features
Package page
Modification of the package to be green.

Edition 2007-05-29
Published by
Infineon Technologies AG
81726 Munich, Germany
Infineon Technologies AG 5/29/07.
All Rights Reserved.
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stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
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