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ISSUE 3 JULY 2005 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot= 1 Watt
ZTX750 ZTX751
C B
-55 to +200
-0.15 -0.3 V -0.28 -0.5 V -0.9 -1.25 V -0.8 200 200 170 80 45 800 -1 300 V
30
30
pF
3-257
ZTX750 ZTX751
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER SYMBOL ZTX750 MIN. TYP. 100 140 40 450 30 ZTX751 MAX. MIN. TYP. 100 140 40 450 30 MAX. UNIT CONDITIONS.
fT ton toff
MHz ns ns pF
Output Capacitance
Cobo
THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) MAX. 175 116 70 UNIT C/W C/W C/W
2.5
200
D=1 (D.C.)
2.0
t1
D=t1/tP tP
C
1.5
as
te
pe
1.0
Am
ra
100
D=0.5
bie
tu
nt t
re
em
0.5 0
per
at u re
-40 -20
20 40
0 0.0001
0.001
0.01
0.1
10
100
T -Temperature (C)
Derating curve
3-258
ZTX750 ZTX751
TYPICAL CHARACTERISTICS
0.6 0.5
td tr tf ns 140
IB1=IB2=IC/10
ts ns 700 600 500 400 300 200 100 0 0.1 1 ts td tf tr
VCE(sat) - (Volts)
IC/IB=10
120
Switching time
0.0001 0.001 0.01 0.1 1 10
100 80 60 40 20 0
VCE(sat) v IC
Switching Speeds
1.2
VBE(sat) - (Volts)
hFE - Gain
1.0
IC/IB=10
0.8
75 0 0.01 0.1 1 10
hFE v IC
10 1.2
VBE(sat) v IC
Single Pulse Test at Tamb=25C
VBE - (Volts)
0.6
0.1
ZTX750 ZTX751
VBE(on) v IC
3-259