Silizium-Fotodiode Silicon Photodiode BPW 33

Wesentliche Merkmale Speziell geeignet fr Anwendungen im Bereich von 350 nm bis 1100 nm Sperrstromarm (typ. 20 pA) DIL-Plastikbauform mit hoher Packungsdichte Anwendungen Belichtungsmesser Farbanalyse Typ Type BPW 33 Bestellnummer Ordering Code Q62702-P76

Features Especially suitable for applications from 350 nm to 1100 nm Low reverse current (typ. 20 pA) DIL plastic package with high packing density Applications Exposure meters Color analysis

2001-02-21

BPW 33
Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Wert Value 40 + 85 7 150 Einheit Unit C V mW

Top; Tstg VR Ptot

Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Parameter Fotoempfindlichkeit, VR = 5 V Spectral sensitivity Wellenlnge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Flche Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flche Dimensions of radiant sensitive area Abstand Chipoberflche zu Gehuseoberflche Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, VR = 1 V Dark current Nullpunktsteilheit, E = 0 Zero crossover Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Symbol Symbol Wert Value 75 ( 35) 800 350 1100 Einheit Unit nA/Ix nm nm

S
S max

A LB LW H

7.34 2.71 2.71

mm2 mm mm

0.5 60 20 ( 100) 2.5 0.59

mm Grad deg. pA pA/mV A/W

IR S0 S

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BPW 33
Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) (contd) Bezeichnung Parameter Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage Kurzschlustrom, Ev = 1000 Ix Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 1 k; VR = 5 V; = 850 nm; Ip = 70 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitt, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschquivalente Strahlungsleistung Noise equivalent power VR = 1 V, = 850 nm Nachweisgrenze, VR = 1 V, = 850 nm Detection limit Symbol Symbol Wert Value 0.86 440 ( 375) 72 1.5 Einheit Unit Electrons Photon mV A s

VO ISC tr, tf

VF C0 TCV TCI NEP

1.3 630 2.6 0.2 4.3 10 15

V pF mV/K %/K W ----------Hz cm Hz ------------------------W

D*

6.3 1013

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BPW 33
Relative Spectral Sensitivity Srel = f ()
100 S rel % 80
OHF00062

Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev)

P

Total Power Dissipation Ptot = f (TA)

160 mW Ptot 140 120 100
OHF00958

10 3

OHF01064

10 4 mV VO 10 3

10 2 VO

60
10 1 10 2

80 60

40
10 0

10 1

40 20

20

0 400

600

800

1000 nm 1200

10 -1 0 10

10 1

10 2

10 3

10 lx 10 4 Ee

20

40

60

80 C 100 TA

Dark Current IR = f (VR), E = 0

80
OHF00073

Capacitance C = f (VR), f = 1 MHz, E = 0

1000 C pF 800
OHF01065

Dark Current

IR = f (TA), VR = 1 V, E = 0
R
10 4 pA
OHF00075

pA 60

10 3

700 600

40

500 400 300

10 2

20
200 100

10 1

8 VR

V 10

0 -2 10

10 -1

10 0

10 1 V 10 2 VR

10 0

20

40

60

80 C 100 TA

Srel = f ()

Directional Characteristics
40 30 20 10

0 1.0

OHF01402

50 0.8 60

0.6

70

0.4

80

0.2 0

90

100

1.0

0.8

0.6

0.4

20

40

60

80

100

120

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BPW 33
Mazeichnung Package Outlines

5.4 (0.213) Cathode marking 4.0 (0.157) 3.7 (0.146)

0.6 (0.024) 0.4 (0.016) 1.2 (0.047) 0.7 (0.028)

4.9 (0.193) 4.5 (0.177)

0.8 (0.031) 0.6 (0.024) 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075)

4.3 (0.169)

Chip position

0.6 (0.024)

1.8 (0.071) 1.4 (0.055)

0.6 (0.024) 0.4 (0.016) 0.4 (0.016) 0.35 (0.014) 0.5 (0.020) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024)

0 ... 5

Photosensitive area 2.65 (0.104) x 2.65 (0.104)

5.08 (0.200) spacing

GEOY6643

Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).

Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

2001-02-21

3.5 (0.138) 3.0 (0.118)