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How to Design-in LightFlash Memories, Ensuring Compatibility with Standard Flash Memories in DVD and TV Applications
CONTENTS
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INTRODUCTION This Application Note explains how to design-in the M29KW016E and M29KW032E LightFlash memories, ensuring compatibility with Industry Standard Flash memories (M29W160D and M29W320D), typically in DVD and TV applications where the reprogramming feature is not required.
INTRODUCTION DESCRIPTION OF LIGHTFLASH FLASH MEMORIES PACKAGES SIGNAL DESCRIPTIONS BLOCK ORGANIZATION COMMAND INTERFACE STATUS REGISTER WRITE PROTECTION AC AND DC PARAMETERS PROGRAM AND ERASE TIMES CONCLUSION REVISION HISTORY
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DESCRIPTION OF LightFlash FLASH MEMORIES The LightFlash (M29KWxxxE) is a new family of non-volatile Flash memories optimized for use in Basic Code Storage applications. They can be read, erased and reprogrammed. Read operations can be performed using a single low voltage (2.7 to 3.6V) supply. Program and Erase operations require an additional VPP (11.4 to 12.6) power supply. The memories have a uniform block architecture, where each block can be erased independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the Command Interface of the memory. An internal Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The LightFlash memories feature a Multiple Word Program command (based on a Fast Program Algorithm) which is used to program large streams of data. It reduces the total programming time by programming Words at consecutive addresses, where the address is automatically incremented, thus reducing the number of Write cycles required. The LightFlash family uses a separate, external high voltage supply VPP of 12V, for all Program and Erase operations to further reduce the Program and Erase times. Chip Erase times are typically 50% less than on the Standard memories. Refer to the M29KWxxxE datasheets for a complete description of the LightFlash memories.
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September 2002
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M29W320D
32Mb
M29KW032E
32Mb
2Mb x16
SO44 Connections Figure 1 compares the S044 pin out of the M29KW016E with the M29W160D. The two differences are highlighted by the shaded areas. Pin 31 is DQ15A-1 in the M29W160D and DQ15 in the M29KW016E. Pin 33 is the BYTE connection for the M29W160D but in the M29KW016E it is the VPP voltage connection. When replacing M29W160D with M29KW016E care must be taken with pin 33. It must be set in the VPP range to allow Program or Erase operations in the M29KW016E. If VPP is set to VIL or VIH, any Program or Erase command will be ignored and the device will revert to read mode. To read the device VPP should be at VIH or VSS. Figure 1. SO44 Connections Comparison, 16Mbit
M29W160D RP A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 E VSS G DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 RP A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 E VSS G DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 M29KW016E 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 W A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 VPP VSS DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC M29W160D W A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE VSS DQ15A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC
AI06297
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12 13
37 36
24
25
AI06298
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12 13
37 36
24
25
AI06299
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M29W160D
3 4 5 6
A3
A7
RB
A9
A13
A3
A7
RB
A9
A13
A4
A17
VPP
RP
A8
A12
A4
A17
NC
RP
A8
A12
A2
A6
A18
NC
A10
A14
A2
A6
A18
NC
A10
A14
A1
A5
NC
A19
A11
A15
A1
A5
NC
A19
A11
A15
A0
DQ0
DQ2
DQ5
DQ7
A16
A0
DQ0
DQ2
DQ5
DQ7
A16
DQ8
DQ10
DQ12
DQ14
NC
DQ8
DQ10
DQ12
DQ14
BYTE
DQ9
DQ11
VCC
DQ13
DQ15
DQ9
DQ11
VCC
DQ13
DQ15 A-1
VSS
DQ1
DQ3
DQ4
DQ6
VSS
VSS
DQ1
DQ3
DQ4
DQ6
VSS
AI07500
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NC(1)
NC(1)
NC(1)
NC(1)
NC(1)
NC(1)
NC(1)
A3
A7
RB
A9
A13
A3
A7
RB
A9
A13
A4
A17
VPP
RP
A8
A12
A4
A17
VPP/WP
RP
A8
A12
A2
A6
A18
NC
A10
A14
A2
A6
A18
NC
A10
A14
A1
A5
A20
A19
A11
A15
A1
A5
A20
A19
A11
A15
A0
DQ0
DQ2
DQ5
DQ7
A16
A0
DQ0
DQ2
DQ5
DQ7
A16
DQ8
DQ10
DQ12
DQ14
NC
DQ8
DQ10
DQ12
DQ14
BYTE
DQ9
DQ11
VCC
DQ13
DQ15
DQ9
DQ11
VCC
DQ13
DQ15 A1
VSS
DQ1
DQ3
DQ4
DQ6
VSS
VSS
DQ1
DQ3
DQ4
DQ6
VSS
NC(1)
NC(1)
NC(1)
NC(1)
NC(1)
NC(1)
NC(1)
NC(1)
AI07501
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FFFFFh 8 KWord FE000h FDFFFh 4 KWord FD000h FCFFFh 4 KWord FC000h FBFFFh 16 KWord F8000h F7FFFh 32 KWord F0000h
0FFFFh 32 KWord 08000h 07FFFh 16 KWord Total of 31 32 KWord Blocks 04000h 03FFFh 4 KWord 03000h 02FFFh 4 KWord 02000h 01FFFh 8 KWord 00000h
AI07502
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1FFFFFh 8 KWord 1FE000h 1FDFFFh 4 KWord 1FD000h 1FCFFFh 4 KWord 1FC000h 1FBFFFh 16 KWord 1F8000h 1F7FFFh 32 KWord 1F0000h
00FFFFh 32 KWord 008000h 007FFFh 16 KWord Total of 63 32 KWord Blocks 004000h 003FFFh 4 KWord 003000h 002FFFh 4 KWord 002000h 001FFFh 8 KWord 000000h
AI07503
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1 Read/Reset 3 Auto Select Word Program/ Program Block Erase Chip Erase 3 4 6+ 6
Note: X Dont Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal.
Shared Commands Read/Reset Command. The Read/Reset command returns the memory to Read mode. This command is the same for both families. The Read/Reset command is executed regardless of the value of VPP (VIH, VIL or VHH) in the LightFlash devices. Auto Select Command. The Auto Select command is used to read the Manufacturer Code and the Device Code. The Auto Select command is executed regardless of the value of VPP (VIH, VIL or VHH) in the LightFlash devices. Table 6 gives the codes for all the devices. Word Program/ Program Command. The basic Program command is referred to as Word Program for LightFlash and Program for Standard Flash. The command sequence is identical for both sets of devices however for the LightFlash VPP must be set to VHH. If VPP is at VIL or VIH the command will be refused and the the device will automatically revert to read mode. Block Erase Command. The command sequence is identical for both sets of devices. In the Standard Flash devices the Block Erase command can be used to erase one or more blocks. In the LightFlash devices the command erases only one block at a time and VPP must be set to VHH. If VPP is at VIL or VIH the command will be refused and the the device will automatically revert to read mode. Table 6. Devices Codes
Device M29KW016E M29KW032E M29W160DT (Top) M29W160DB (Bottom) M29W320DT (Top) M29W320DT (Bottom) Code 88ABh 88ACh 22C4h 2249h 22CAh 22CBh
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Program Verify
3+n +1 n+1
Note: A Bus Read must be done between each Write cycle where the data is programmed or verified, to Read the Status Register and check that the memory is ready to accept the next data. NOT PA1 is any address that is not in the same block as PA1. X Dont Care, n = number of Words to be programmed.
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(tMWP-TRAN(1))
Write 55h Address 2AAh DQ0 = 0? YES Write 20h Address 555h Write Data1 (PD1) Start Address (PA1) NO
Read Status Register NO Setup time exceeded? YES NO DQ6 toggling? YES
Read Status Register NO DQ0 = 0? YES Write Data 2 (PD2) Address in Start Block NO Word program time exceeded? YES
(tMWP-SETUP(1))
NO
(tMWP-PROG(1))
DQ0 = 0? YES
Program Phase
DQ0 = 0? YES
NO
(tMWP-PROG(1))
DQ0 = 0? YES
NO DQ0 = 0? YES
DQ0 = 0? YES
(tMWP-PROG(1))
Read Status Register
Exit Phase
Write Data n (PDn) Address in Start Block Read Status Register Read Status Register DQ6 toggling? DQ0 = 0? YES Write XX Any Address NOT in Start Block NO NO YES
YES
DQ5 = 1 DQ4 = 0?
NO
Fail error
(tMWP-END(1))
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Unlock Bypass Unlock Bypass Program Unlock Bypass Reset Erase Suspend Erase Resume Read CFI Query
3 2 2 1 1 1
Note: X Dont Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal.
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A A
mA
A
mA V V V V V V
A
mA
VID
Identification Voltage
11.5
12.5
IID
Identification Current
A9 = VID
100
Note: 1. On M29W160D/320D devices special bus operations are available to read the electronic signature and to apply and remove block protection. They are intended for programming equipment and require VID applied on certain pins.
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ask.memory@st.com
Please remember to include your name, company, location, telephone number and fax number.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics LightFlash is a trademark of STMicroelectronics All other names are the property of their respective owners 2002 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. www.st.com
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