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PD - 95703

IRFPS3810PbF
HEXFET Power MOSFET
l l l l l l l

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free

VDSS = 100V RDS(on) = 0.009

G S

ID = 170A

Description
The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Super-247

Absolute Maximum Ratings


Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

Max.
170 120 670 580 3.8 30 1350 100 58 2.3 -55 to + 175 300 (1.6mm from case )

Units
A W W/C V mJ A mJ V/ns C

Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

Typ.
0.24

Max.
0.26 40

Units
C/W

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1
9/10/04

IRFPS3810PbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ

RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance

Min. 100 3.0 52

Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.009 VGS = 10V, ID = 100A 5.0 V VDS = 10V, ID = 250A S VDS = 50V, ID = 100A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V 390 ID = 100A 74 nC VDS = 80V 250 VGS = 10V VDD = 50V ID = 100A ns RG = 1.03 VGS = 10V D Between lead, 5.0 6mm (0.25in.) nH G from package 13 and center of die contact S 6790 VGS = 0V 2470 pF VDS = 25V 990 = 1.0MHz, See Fig. 5 10740 VGS = 0V, VDS = 1.0V, = 1.0MHz 1180 VGS = 0V, VDS = 80V, = 1.0MHz 2210 VGS = 0V, VDS = 0V to 80V

Typ. 0.11 260 49 160 24 270 45 140

Source-Drain Ratings and Characteristics


IS
ISM

VSD trr Qrr ton Notes:

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Min. Typ. Max. Units

Conditions D MOSFET symbol 170 showing the A G integral reverse 670 S p-n junction diode. 1.3 V TJ = 25C, IS = 100A, VGS = 0V 220 330 ns TJ = 25C, IF = 100A 1640 2460 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Repetitive rating; pulse width limited by Starting TJ = 25C, L = 0.27mH


TJ 175C RG = 25, IAS = 100A. (See Figure 12)

max. junction temperature. (See fig. 11)

Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 105A.

ISD 100A, di/dt 350A/s, VDD V(BR)DSS,

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IRFPS3810PbF
1000
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP

1000

I D , Drain-to-Source Current (A)

100

10

I D , Drain-to-Source Current (A)

100

VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP

5.0V
0.1

10

5.0V

0.01 0.1

50s PULSE WIDTH TJ = 25 C


1 10 100

1 0.1

50s PULSE WIDTH TJ = 175 C


1 10 100

VDS , Drain-to-Source Voltage (V)

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

3.0

RDS(on) , Drain-to-Source On Resistance (Normalized)

ID = 170A

I D , Drain-to-Source Current (A)

TJ = 175 C

2.5

100

2.0

1.5

TJ = 25 C
10

1.0

0.5

V DS = 50V 50s PULSE WIDTH 5 6 7 8 9 10 11 12 13

0.0 -60 -40 -20 0

VGS = 10V
20 40 60 80 100 120 140 160 180

VGS , Gate-to-Source Voltage (V)

TJ , Junction Temperature ( C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

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IRFPS3810PbF
20
15000

ID = 100A VDS = 80V VDS = 50V VDS = 20V

VGS , Gate-to-Source Voltage (V)

VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd , C ds SHORTED Crss = C gd Coss = Cds + Cgd

16

C, Capacitance(pF)

10000

12

Ciss

5000

Coss Crss

0 1 10 100

FOR TEST CIRCUIT SEE FIGURE 13


0 100 200 300 400

VDS , Drain-to-Source Voltage (V)

QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

1000

10000

ISD , Reverse Drain Current (A)

OPERATION IN THIS AREA LIMITED BY R DS(on)

TJ = 175 C

ID, Drain-to-Source Current (A)

1000

100

100

100sec 1msec

TJ = 25 C

10 Tc = 25C Tj = 175C Single Pulse 1 10 10msec

10 0.2

V GS = 0 V
0.8 1.4 2.0 2.6

VSD ,Source-to-Drain Voltage (V)

100

1000

VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

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IRFPS3810PbF
200

LIMITED BY PACKAGE
160

V DS VGS RG VGS
Pulse Width 1 s Duty Factor 0.1 %

RD

D.U.T.
+

ID , Drain Current (A)

-VDD

120

80

Fig 10a. Switching Time Test Circuit


40

VDS 90%

25

50

TC , Case Temperature ( C)

75

100

125

150

175

Fig 9. Maximum Drain Current Vs. Case Temperature

10% VGS
td(on) tr t d(off) tf

Fig 10b. Switching Time Waveforms


1

Thermal Response (Z thJC )

D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1

0.01

0.001 0.00001

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFPS3810PbF
EAS , Single Pulse Avalanche Energy (mJ)
15V

3000

2500

VDS

DRIVER

ID 41A 71A BOTTOM 100A TOP

2000

RG
20V

D.U.T
IAS tp

+ V - DD

1500

0.01

Fig 12a. Unclamped Inductive Test Circuit

1000

500

V(BR)DSS tp

25

50

75

100

125

150

175

Starting TJ , Junction Temperature ( C)

Fig 12c. Maximum Avalanche Energy Vs. Drain Current


I AS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator Same Type as D.U.T.

QG
12V .2F

50K .3F

QGS VG

QGD
VGS
3mA

D.U.T.

+ V - DS

Charge

IG

ID

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

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IRFPS3810PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

+ VDD

Driver Gate Drive P.W. Period D=

P.W. Period VGS=10V

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

VDD

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET Power MOSFETs

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IRFPS3810PbF
Case Outline and Dimensions Super-247

Super-247 (TO-274AA) Part Marking Information


E X A M P L E : T H I S I S A N IR F P S 3 7 N 5 0 A W IT H ASSEM BLY LO T CO DE 1789 ASSEM BLED O N W W 19, 1997 I N T H E A S S E M B L Y L IN E " C " PART NUM BER IN T E R N A T IO N A L R E C T IF IE R LO GO ASSEM BLY LO T CO DE
IR F P S 3 7N 5 0 A 719C 17 89

N o t e : " P " in a s s e m b ly lin e p o s it io n in d ic a te s " L e a d -F re e "

TO P

DATE CODE (Y Y W W ) YY = YEAR W W = W EEK

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04

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