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Power Transistors

2SC3496, 2SC3496A
Silicon NPN triple diffusion planar type
For power switching
8.50.2

Unit: mm
3.40.3 1.00.1 6.00.2

Features
High-speed switching High collector-base voltage (Emitter open) VCBO Satisfactory linearity of forward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment
10.00.3 1.50.1

4.40.5

Absolute Maximum Ratings TC = 25C


1 2

Collector-base voltage (Emitter open)

2SC3496 2SC3496A

VCBO VCES VCEO VEBO IB IC ICP PC

900 1 000 900 1 000 800 900 7 0.3 1 2 30 1.3

V
(6.5)

Collector-emitter voltage 2SC3496 (E-B short) 2SC3496A Collector-emitter voltage 2SC3496 (Base open) 2SC3496A Emitter-base voltage (Collector open) Base current Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Ta = 25C

1: Base 2: Collector 3: Emitter N-G1 Package

Note) Self-supported type package is also prepared. V A A A W C C

Tj Tstg

150 55 to +150

Electrical Characteristics TC = 25C 3C


Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SC3496 2SC3496A 2SC3496 2SC3496A IEBO hFE1 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf ICBO VCB = 900 V, IE = 0 VCB = 1 000 V, IE = 0 VEB = 7 V, IC = 0 VCE = 5 V, IC = 0.05 A VCE = 5 V, IC = 0.5 A IC = 0.2 A, IB = 0.04 A IC = 0.2 A, IB = 0.04 A VCE = 10 V, IC = 0.05 A, f = 1 MHz IC = 0.2 A IB1 = 0.04 A, IB2 = 0.08 A VCC = 250 V 4 1.0 3.0 1.0 6 3 1.5 1.0 V V MHz s s s Symbol VCEO Conditions IC = 1 mA, IB = 0 Min 800 900 50 50 50 A A Typ Max Unit V

Emitter-base cutoff current (Collector open) Forward current transfer ratio

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003 SJD00104AED

(7.6)

Parameter

Symbol

Rating

Unit

(1.5)

0.80.1 R = 0.5 R = 0.5 2.540.3 1.00.1 1.40.1 0.40.1 5.080.5 (8.5) (6.0) 1.3 3

2.00.5

4.40.5

0 to 0.4

14.40.5

3.0+0.4 0.2

1.5+0 0.4

2SC3496, 2SC3496A
PC Ta
50
1.2
(1)TC=Ta (2)With a 50502mm Al heat sink (3)Without heat sink (PC=1.3W) (1)
TC=25C IB=200mA

IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
IC/IB=5

VCE(sat) IC
TC=100C 25C

Collector power dissipation PC (W)

40

1.0

Collector current IC (A)

0.8

30

0.6

20

100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 10mA

25C

0.1

0.4

10
(2) (3)

0.2

40

80

120

160

10

12

0.01 0.01

0.1

Ambient temperature Ta (C)

Collector-emitter voltage VCE (V)

Collector current IC (A)

VBE(sat) IC
IC/IB=5

hFE IC
1 000
VCE=5V

fT I C
VCE=10V f=1MHz TC=25C

Base-emitter saturation voltage VBE(sat) (V)

100

Forward current transfer ratio hFE

TC=25C 100C

25C TC=100C

Transition frequency fT (MHz)


1

25C

100

10
25C

10

0.1

0.01 0.01

0.1

0.1 0.01

0.1

0.1 0.001

0.01

0.1

Collector current IC (A)

Collector current IC (A)

Collector current IC (A)

ton , tstg , tf IC
Turn-on time ton , Storage time tstg , Fall time tf (s)
100
Pulsed tw=1ms Duty cycle=1%

Safe operation area


10
ICP

Collector current IC (A)

10

IC/IB=5(2IB1=IB2) VCC=250V TC=25C

IC
300ms

t=10ms

tstg

0.1

0.1

ton tf

0.01
2SC3496A 2SC3496

0.01

0.2

0.4

0.6

0.8

1.0

0.001

Non repetitive pulse TC=25C

10

100

1 000

Collector current IC (A)

Collector-emitter voltage VCE (V)

SJD00104AED

2SC3496, 2SC3496A
Safe operation area (Reverse bias)
4
L=100H IC/IB=5 (2IB1=IB2) TC=125C

Safe operation area (Reverse bias) measurement circuit

L IB1 T.U.T IC

Collector current IC (A)

ICP

VIN

IB2

VCC

IC

tw
0 0 400 800 1200 1600

VCLAMP

Collector-emitter voltage VCE (V)

Rth t
102
(1)Without heat sink (2)With a 50502mm Al heat sink (1)

Thermal resistance Rth (C/W)

10

(2)

101

102 104

103

102

101

10

102

103

104

Time t (s)

SJD00104AED

Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.

2002 JUL