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by TIP120/D
SEMICONDUCTOR TECHNICAL DATA

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!$    ! 
. . . designed for general–purpose amplifier and low–speed switching applications.
• High DC Current Gain — 

hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector–Emitter Sustaining Voltage — @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) — TIP120, TIP125 

VCEO(sus) = 80 Vdc (Min) — TIP121, TIP126
VCEO(sus) = 100 Vdc (Min) — TIP122, TIP127
• Low Collector–Emitter Saturation Voltage —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors
 
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• TO–220AB Compact Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*MAXIMUM RATINGS *Motorola Preferred Device

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIP120, TIP121, TIP122,
Rating Symbol TIP125 TIP126 TIP127 Unit DARLINGTON

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
5 AMPERE
Collector–Emitter Voltage VCEO 60 80 100 Vdc
COMPLEMENTARY SILICON

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage VCB 60 80 100 Vdc POWER TRANSISTORS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage VEB 5.0 Vdc 60 – 80 – 100 VOLTS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous IC 5.0 Adc 65 WATTS
Peak 8.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current IB 120 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25_C PD 65 Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Derate above 25_C 0.52 W/_C
Total Power Dissipation @ TA = 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
PD 2.0 Watts
Derate above 25_C 0.016 W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
Unclamped Inductive Load Energy (1) E 50 mJ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
Operating and Storage Junction, TJ, Tstg – 65 to + 150 _C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Temperature Range

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case RθJC 1.92 _C/W CASE 221A–06

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Ambient RθJA 62.5 _C/W TO–220AB
(1) IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 Ω.
TA TC
4.0 80
PD, POWER DISSIPATION (WATTS)

3.0 60

TC
2.0 40

TA
1.0 20

0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2

 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

 
 
 
 
 
 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1) VCEO(sus) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 100 mAdc, IB = 0) TIP120, TIP125 60 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIP121, TIP126 80 —
TIP122, TIP127 100 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEO mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 30 Vdc, IB = 0) TIP120, TIP125 — 0.5

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 40 Vdc, IB = 0) TIP121, TIP126 — 0.5
(VCE = 50 Vdc, IB = 0) TIP122, TIP127

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
— 0.5
Collector Cutoff Current ICBO mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCB = 60 Vdc, IE = 0) TIP120, TIP125 — 0.2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCB = 80 Vdc, IE = 0) TIP121, TIP126 — 0.2
(VCB = 100 Vdc, IE = 0) TIP122, TIP127

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
— 0.2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current IEBO — 2.0 mAdc
(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain hFE —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 0.5 Adc, VCE = 3.0 Vdc) 1000 —
(IC = 3.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
1000 —

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 3.0 Adc, IB = 12 mAdc) — 2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 5.0 Adc, IB = 20 mAdc) — 4.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VBE(on) — 2.5 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 3.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small–Signal Current Gain hfe 4.0 — —
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance Cob pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127 — 300

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIP120, TIP121, TIP122 — 200
v
(1) Pulse Test: Pulse Width v
300 µs, Duty Cycle 2%.

5.0
CC V ts PNP
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS – 30 V 3.0 NPN
D1 MUST BE FAST RECOVERY TYPE, eg: 2.0
1N5825 USED ABOVE IB ≈ 100 mA RC
MSD6100 USED BELOW IB ≈ 100 mA SCOPE tf
TUT 1.0
t, TIME ( µs)

V2 RB
approx
0.7
+ 8.0 V 0.5
D1 ≈ 8.0 k ≈ 120
51 0.3
0
0.2 tr
V1 VCC = 30 V
approx + 4.0 V
IC/IB = 250
–12 V 25 µs for td and tr, D1 is disconnected 0.1 IB1 = IB2
and V2 = 0 0.07 TJ = 25°C
tr, tf ≤ 10 ns For NPN test circuit reverse all polarities. td @ VBE(off) = 0
DUTY CYCLE = 1.0% 0.05
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Times Test Circuit Figure 3. Switching Times

2 Motorola Bipolar Power Transistor Device Data


 
 
 
 
 
 
1.0
0.7
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.5
0.5

0.3
0.2
0.2
(NORMALIZED)

0.1 ZθJC(t) = r(t) RθJC P(pk)

0.1
RθJC = 1.92°C/W MAX
0.07 0.05 D CURVES APPLY FOR POWER
0.05 PULSE TRAIN SHOWN
0.02 t1
0.03 READ TIME AT t1 t2
TJ(pk) – TC = P(pk) ZθJC(t) DUTY CYCLE, D = t1/t2
0.02
0.01
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 4. Thermal Response

20
10 100 µs There are two limitations on the power handling ability of a
IC, COLLECTOR CURRENT (AMP)

500 µs transistor: average junction temperature and second break-

5.0
down. Safe operating area curves indicate IC – VCE limits of
2.0 dc the transistor that must be observed for reliable operation,
TJ = 150°C
BONDING WIRE LIMITED
i.e., the transistor must not be subjected to greater dissipa-
1.0
THERMALLY LIMITED tion than the curves indicate.
1 ms
0.5 @ TC = 25°C (SINGLE PULSE) The data of Figure 5 is based on T J(pk) = 150_C; TC is
5 ms
SECOND BREAKDOWN LIMITED variable depending on conditions. Second breakdown pulse
0.2
CURVES APPLY BELOW limits are valid for duty cycles to 10% provided T J(pk)
0.1 RATED VCEO < 150_C. T J(pk) may be calculated from the data in Figure 4.
0.05 TIP120, TIP125 At high case temperatures, thermal limitations will reduce the
TIP121, TIP126
power that can be handled to values less than the limitations
TIP122, TIP127
0.02 imposed by second breakdown
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Active–Region Safe Operating Area

10,000 300
5000 TJ = 25°C
h fe , SMALL–SIGNAL CURRENT GAIN

3000 200
2000
C, CAPACITANCE (pF)

1000
500 Cob
TC = 25°C 100
300 VCE = 4.0 Vdc
200
IC = 3.0 Adc
100 70 Cib

50 50 PNP
30 PNP
20 NPN
NPN
10 30
1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Small–Signal Current Gain Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data 3


 
 
 
 
 
 
NPN PNP
TIP120, TIP121, TIP122 TIP125, TIP126, TIP127
20,000 20,000
VCE = 4.0 V VCE = 4.0 V
10,000 10,000
7000
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

5000 TJ = 150°C 5000
TJ = 150°C
3000 3000
2000 25°C 2000 25°C

1000 – 55°C 1000

700 – 55°C
500 500

300 300
200 200
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

3.0 3.0
TJ = 25°C TJ = 25°C
2.6 IC = 2.0 A 4.0 A 6.0 A 2.6 IC = 2.0 A 4.0 A 6.0 A

2.2 2.2

1.8 1.8

1.4 1.4

1.0 1.0
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region

3.0 3.0
TJ = 25°C TJ = 25°C
2.5 2.5
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

2.0 2.0

1.5 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V

VBE @ VCE = 4.0 V

VBE(sat) @ IC/IB = 250
1.0 1.0
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages

4 Motorola Bipolar Power Transistor Device Data


 
 
 
 
 
 
PACKAGE DIMENSIONS

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

CASE 221A–06
TO–220AB
ISSUE Y

Motorola Bipolar Power Transistor Device Data 5


 
 
 
 
 
 

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6 Motorola Bipolar Power Transistor Device Data

*TIP120/D*
◊ TIP120/D
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