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Omid Shoaei, Univ.

of Tehran
1
Electronic III

Bipolar Transistor Models
Omid Shoaei, Univ. of Tehran
2
Simplified Bipolar Operation
When the emitter junction is forward biased, it conducts. It consists of
majority carriers from emitter (electrons here) and majority carriers from
base (holes here).
Since emitter is much more heavily doped than base, injected electrons
from emitter are many more.
Assuming collector voltage is high (collector-base is reversed biased) no
holes from the base will go to the collector.
However electrons that travel from the emitter to the base, where they are
now minority carriers diffuse away from the base-emitter junction due to
the minority carriers concentration gradient in base.
Electrons
Holes
n+
p
n- n+
base emitter
collector
Fig.2.1
Omid Shoaei, Univ. of Tehran
3
Simplified Bipolar Operation
Any of these electrons that gets close to collector-base junction will
immediately be whisked across the junction due to the large positive
voltage on the collector, which attracts electrons.
In a properly designed vertical bipolar, the vertical base width W (next
page figure) is small, so almost all of electrons that diffuse from the
emitter to base reach collector-base junction and are swept across
junction.
So the collector current very closely equals the electron current flowing
from the emitter to base.
The much smaller base current very closely equals the current due to the
holes that flow from base to emitter.

Omid Shoaei, Univ. of Tehran
4
Simplified Bipolar Operation
B
W
+ n
- p
n
+ n + n
This image cannot currently be displayed.
p
C B E
S
Fig.2.2.The vertical npn bipolar transistor in IC
Omid Shoaei, Univ. of Tehran
5
The Hybrid- small signal model
r
B
r

r
o
C
jEt
C
D
C
CS
C

= C
jCt
E E
B C
S
g
m
v
BE

C


v
BE
B
Fig.2.3.The hybrid- model of bipolar transistor
Omid Shoaei, Univ. of Tehran
6
The Hybrid- small signal model

=
=
) 2 2 (
) 1 2 ( )
/
exp(
2
B
i n EB
S
BE
S C
Q
n D A q
I
q KT
V
I I
is the charge concentration per emitter area in the base (note:
unit is m
-2
).
is base doping concentration (m
-3
), for NPN:
is the base width (m).
is the EB area (m
2
).
is the diffusion constant for electrons (m
2
/sec). It is related to
mobility by Einsteins relation, given by: .
is intrinsic silicon electron concentration (at a given temperature) (m
-3
).
(@ room temperature )
q is the electron charge (unit is Coulombs i.e. C)
Unit: (C)x(m
2
)x(m
2
/sec)x(m
-3
)
2
/(m
-2
)=C/sec=A

B B B
W N Q =
B
N
B
W
EB
A
n
D
) / ( q kT D
n n
=
i
n
3 10
cm / 10 5 . 1 =
i
n
3 17
0
cm / 10 2 =
p
p
Omid Shoaei, Univ. of Tehran
7
The Hybrid- small signal model
Tranconductance g
m


) 3 2 (
/
= =
q kT
I
dV
dI
g
C
BE
C
m
Directly proportional with I
C
. Doubling the current doubles the
Tranconductance.


@ room temperature larger than the MOST counterpart.


mV 26
1
= =
kT
q
I
g
C
m
mV
V
eff
100
1
V 2 . 0
2
: V 2 . 0 for
2
= = =

=
DSQ
m
TH GSQ
DSQ
m
I
g
V V
I
g
Omid Shoaei, Univ. of Tehran
8
The Hybrid- small signal model
Input Resistance r


The ratio of the AC V
BE
and the AC I
B

is the AC input resistance. It is called
r

as follows:




Its relationship with and g
m
is
depicted in figure2.4.


C AC BE BE
B C B m
dI dV dV
r
dI dI dI g


= = =
) 4 2 ( =
AC m
r g

m
g
F

B
r

C

f
T
f
B
f
Fig.2.4
Omid Shoaei, Univ. of Tehran
9
The Hybrid- small signal model
Output Resistance r
o

r
o
is the ratio of the AC V
CE
to the AC I
C
:


CE
o
C
dV
r
dI
=
2
exp( )
/
- Since
- - ( ) (2 5)
BE
C S
EB n i
S
B
CE CB BE BC BE
CE BC BC B
o
C C B C
V
I I
KT q
q A D n
I
Q
V V V V V cte
dV dV dV dQ
r
dI dI dQ dI

= + = =
= = =
Increasing V
BC
by V
BC
increases the width of the depletion layer as shown
in the next figure. The depletion layer charge increases by Q
B
.
So less Q
B
is left (the base charge is decreased by the same amount Q
B
).
related to the BC
junction cap per area
Omid Shoaei, Univ. of Tehran
10
The Hybrid- small signal model
Also the variation of the depletion layer charge Q
B
is linked to the depletion
capacitance C
jC
(in F/cm
2
) as:



The second term in is also derived as follows:
Fig.2.5. Relation between Q
B
and V
BC
through C
jC

- ( ) (2 5)
BC B
o
B C
dV dQ
r
dQ dI
=
) 7 2 ( - ) / exp( - ) / exp(
2
2 2
= = =
B
C
T EB
B
i n EB
B
C
T EB
B
i n EB
C
Q
I
V V
Q
n D A q
dQ
dI
V V
Q
n D A q
I

E

B

C
B
Q
B
Q
jC
C
BC
v
( )
BC BC CB CB
V V V V + = +
) 6 2 (

jC B
BC
jC
BC
B
C
q
dQ
dV
C
V
Q
q
Omid Shoaei, Univ. of Tehran
11
The Hybrid- small signal model
(- )( ) (- )(- )
Defining Early voltage as:
(2 8)

is the total base-collector area.
is the total base-collector junct
CE BC B B B
o
C B C jC C jC C
BC B A B
o A
C jC jC t
jC t BC jC
BC
jC t
dV dV dQ q Q q Q
r
dI dQ dI C I C I
q A Q V q Q
r V
I C C
C A C
A
C
= = = =
= = =
=
ion capacitance.
Represented by C

in the hybrid- model


Omid Shoaei, Univ. of Tehran
12
The Hybrid- small signal model
Small-Signal Voltage Gain A
v


( )
( ) ( ) ( )

2 / 1
/ 1
2 / 1 2 / 1
: stage MOST of with that BJ T of gain Comparing
66 or 2000 10 2 . 5 50 For
where
1
: rewrite can one Also
) 9 2 (
/
,
4
eff eff
A
eff
E
v
v A
A m
o
A
T
A
v
C
A
o
T
C
m
o m v
V V
V
V
L V
A
A V
qV
kT
g
r
q kT
V
V
V
A
I
V
r
V
I
g
r g A

dB V/V V
= = =
= =
= =
= = = =
=

Omid Shoaei, Univ. of Tehran


13
The Hybrid- small signal model
Base Transit Time


We can write the current in BJT as follows:

QF is the total integrated charge in the base which depends on the forward bias V
BE
.
The more injected minority charge (Q
F
) into base, the more current to collector.
The faster injected charge reach collector (smaller ), the higher collector
current is.
As it will be seen: where
sat
is the saturation velocity in base
region.
This leads to the physical interpretation that is the average time in which
the electrons diffuse through the base from the emitter side to the
collector side.
It is a measure of the max. frequency:

sat
B
F
v
W
=
F

Note: Similarly in existing short channel MOS, with reduction of L the current is governed by
above velocity saturation (
sat
) equation and so max. frequency is:

F

eff
sat
L
v
f
2
1
max
=

=
=
n
B
F
F
F
c
D
W
Q
i
2
2


) 10 2 (
2
1
max
=
F
T
f

Omid Shoaei, Univ. of Tehran


14
The Hybrid- small signal model
Q
F
, the dynamic charge is not same as Q
B
.
Q
F
is the total integrated charge in the base which depends on the forward
bias V
BE
.
Q
B
=N
B
W
B
is the charge concentration density per emitter area that is
physically present in the base.
They dont have same dimension either. Q
B
, number of carrier per cm
2
,
whereas Q
F
, total charge in Coulombs.
Base Transit Time



F

=
= = =
B
i n EB
S
F
B
n
F
F BE
S C
Q
n D A q
I
Q
W
D Q
q KT
v
I I
2
2
2
)
/
exp(

Omid Shoaei, Univ. of Tehran


15
The Hybrid- small signal model
Capacitances


Where
C
D
is a Diffusion Capacitance (discussed later), and
C
j
is the depletion capacitance of the base-emitter junction. For forward
biased junction:


D j be
C C C C + = =

) 12 2 ( 2
) 11 2 ( 3 / 1 ,
) - 1 (
0
0
0

= =
je E jEt
jE
m
jE
BE
jE E
jEt
C A C
m
V
C A
C
jE

GM
Omid Shoaei, Univ. of Tehran
16
The Hybrid- small signal model
This is the charge of minority carriers in base (electrons in npn). This
variation causes a variation in majority carriers charge in collector (as
explained in BJT operation).
Q
F
/v
BE
has the dimension of capacitance and is called the diffusion
capacitance.

) 13 2 ( )
/
exp(
/ /
= = = = =
q KT
V
I
q KT q KT
I
g
dV
dI
dI
dQ
dV
dQ
C
BE
S
F C
F m F
BE
C
C
F
BE
F
D


Diffusion Capacitance C
D

A variation in base-emitter voltage v
BE
causes a variation in injected
charge Q
F
.


2 2 2
2
(2 14)
2 2 / / 2 ( / )
C B C B B
D F m m
n n n
I W I W W
C g g
D kT q kT q kT q


= = = =
So physically C
D
is directly proportional with (width of the base region
squared) and the collector current!
2
B
W
Omid Shoaei, Univ. of Tehran
17
The Hybrid- small signal model
The diffusion capacitance is much larger than the base-emitter junction
capacitance. It increases exponentially with V
BE
, whereas C
jEt
increases
only with the inverse of the square root of (1-V
BE
/
0
).
C
BE
V
V 1 j

5 . 0 0
0
0 jEt
C
D
C
jEt
C
pF 5
Fig.2.6
Omid Shoaei, Univ. of Tehran
18
The Hybrid- small signal model
Collector J unction Capacitance C

C

models the depletion capacitance of the collector-base junction


(normally in reverse bias). Since this is a graded junction:




Where A
C
is the effective area of the collector-base interface.
) 15 2 (
) 1 (
3 / 1
0
0

+
= = =
C
CB
jC C
jCb jCt
V
C A
C C C

3 15 3 17 3 19
2
2
/ 10 2 , / 10 2 , / 10
73 . 0 ) ln(
95 . 0 ) ln(
: Potentials J unction
cm cm cm
V
V
= = =
=
=
C B E
i
B C
CB
i
B E
EB
N N N
n
N N
q
kT
n
N N
q
kT

Omid Shoaei, Univ. of Tehran


19
Small Signal Model for Forward-Biased Diode
n
n
F
A si
N N
D A
A D si
j
j j
T
D
F D
j D t
D
T
d
D
W
N q
N N
N N q
C
C C
V
I
C
C C C
I
V
r
A D
2
and
2 2
: Where
) 17 2 ( 2 ,
) 16 2 ( ,
2
0 0
0
0
=
=
+
=
=
+ = =
>>

r
d C
j
C
D
Omid Shoaei, Univ. of Tehran
20
The Hybrid- small signal model
Base Resistance r
B
The active region of the bipolar transistor is located directly underneath the
emitter. The base region is contacted by means of ohmic regions that add
series resistance as well as additional capacitance.
For example, a series base resistance r
B
is present between the base
contact metal and the active base. It is the most important parasitic series
resistance and is included in the hybrid- model.
+ n
+ n + n
p
n
E
B C
B
r
Fig.2.7
Omid Shoaei, Univ. of Tehran
21
The Hybrid- small signal model
Collector- Base Resistance


GM
Represents
recombination of holes
and electrons
in the base and is
proportional to the
minority-carrier charge
Q, in the base.
Omid Shoaei, Univ. of Tehran
22
A Simple High-Freq. Model for CE with Current Drive
In first example we want to
realize a current-gain amplifier.
For this purpose consider a BJT
amplifier, which has a large input
source resistance R
S
.
The AC signal is amplified, then is
short circuited by a large cap C


to ground, through which we can
measure i
Out
.
R
L
R
s
C

v
in
v
CC
i
Out
Fig.2.8-a
r
B
r

C

C

R
S
i
Out
=

i
C
g
m
v
BE
v
BE
i
in
B B
Fig.2.8-b
Omid Shoaei, Univ. of Tehran
23
A Simple High-Freq. Model for CE with Voltage Drive
In 2nd example we want to
realize a voltage-to-current
amplifier. For this purpose
consider a BJT amplifier, which
has a small input source
resistance R
S
.
The AC signal is amplified, then is
short circuited by a large cap. C


to ground, through which we can
measure i
Out
.
R
L
R
s
C

v
in
v
CC
i
Out
Fig.2.8-a
Fig.2.9
r
B
r

C

C

i
Out
=

i
C
g
m
v
BE
v
BE
B B
v
in
Z
in
Omid Shoaei, Univ. of Tehran
24
A Simple High-Freq. Model for CE with Current Drive
Since output is short-circuited r
o
can be left out. A current i
C
= i
Out
flows in
the output short circuit.
R
S
>> r

+r
B
therefore the transistor is current driven. Its input current is
approximately i
in
= v
in
/R
S
.
R
S
= , so from Fig.2.8-b one could say since the input impedance of device
is very small compared to R
S
so the input current is almost equal to v
in
/R
S
.
r
B
r

C

C

i
Out
=

i
C
g
m
v
BE
i
in v
BE
B B
Fig.2.8-c
Omid Shoaei, Univ. of Tehran
25
A Simple High-Freq. Model for CE with Current Drive
Short circuit current gain A
I
= i
out
/ i
in

A common indicator for the speed of a BJT is the frequency at which the
transistor current gain drops to unity, when the collector is connected to a
small-signal ground: f
T
= Unity-Gain Frequency
So for R
S
>> r

+r
B
:
'
'
( )
1
[ || ]
1
( ) 1 ( )
( )
(neglecting current)
1 ( )
1
where and
1 / 2 ( )
Note: ( )
(
B E B B B
C m
C m B E
B
C AC
AC m
B
C m
B
r
s C C
r
v i r i i
s C C s r C C
r
s C C
i g r
i g v C
i s r C C
i
f g r
i j f f r C C
i g r
i

+
= = =
+ + +
+
+
= =
+ +
= = =
+ +
=

for
)
for ( ) 1 or (2 18)
2 ( )
C m m
T T
B
f f
C C r
i g g
f
i C C C C




>>
+
= = =
+ +
This is true for
frequencies
near and
smaller than f
T

if:
f
T
<<g
m
/ C

Omid Shoaei, Univ. of Tehran
26
A Simple High-Freq. Model for CE with Current Drive
I
m
T
AC
T
AC
in
Out
I
A f f
C C
g
f
f
f
f
f
j
i
i
A j
gain current for
Frequency Gain - Unity
) ( 2
) 20 2 (
) 19 2 (
1
) (
3 - dB

=
+
=
=

+
= = =


I
A
AC
log
dB 3 -
dB/decade 20
or 1 slope
1 log

f
T
f
f
f

90 -

45 -
0
I
A
Fig.2.10
Omid Shoaei, Univ. of Tehran
27
A Simple High-Freq. Model for CE with Current Drive

+ =

+
=
+ +
=
+
+
=
+
+
=
+ +
=
=
+ +
=
+
=
) 22 2 (
/
) (
) 21 2 (
2
1
) (
2
1
) (
2
1
1
1
2
1
) ( 2
and
) ( 2 ) ( 2
F
jEt T f C
T f C C
C
F
T
F
T
jEt C
C
F
F m
jEt C
C
C
F
T
F m
jEt
F
jEt F m
m
T
F m D
jEt D
m m
T
q kT
C C I
I I
I
f
V
C C I
I
g
C C I
I
I
f
g
C C
C C g
g
f
g C
C C C
g
C C
g
f


1
jEt jEt
D
T T F
T m m m m m m m
C C C C C
C C
g g g g g g g

= = + = + + = + +
Omid Shoaei, Univ. of Tehran
28
A Simple High-Freq. Model for CE with Current Drive
f
T
is reached to its max. value at medium and high currents. The transition
current at which this occurs is denoted by I
CfT
:








Finally, f
T
is specified for a bipolar transistor with a short-circuited (for AC
signal) collector. If an Ohmic series resistance r
C
is present, the output can
be shorted but there is still some collector resistance that remains.
) 23 2 (
/
) (
2
1
+ + + = =

C r
I
q kT
C C
f
C
C
jEt F
T
T

T
f
F
2
1
T f C
I
C
I
0
T
f 2
1
q
kT
C C
jEt
) ( slope

+
C
I / 1
0
F

Fig.2.11
Omid Shoaei, Univ. of Tehran
f
T
declines as I
C
increases
The decline in f
T
at high collector currents is not predicted by
this simple theory and is due to an increase in
F
caused by
high-level injection and Kirk effect at high currents. These are
the same mechanisms that cause a decrease in
F
at high
currents as described in Section 1.3.5.
29
GM
Omid Shoaei, Univ. of Tehran
r
c
resistance
30
r
c
, the Ohmic resistor between the
collector and base contacts, is minimal if
the collector contact is made right
underneath the emitter in the collector
area (the imaginary node represented by
C in the figure)!
1 2 3 c c c c
r r r r = + +
r
c1
r
c2
r
c3
C
Omid Shoaei, Univ. of Tehran
Inclusion of r
c
resistance
31
GM
Omid Shoaei, Univ. of Tehran
32
A Simple High-Freq. Model for CE with Current Drive
Example:
Calculate f

and f
T
for I
C
=0.01 mA, 0.1 mA, and 1 mA ?
If r
C
=30 , what is the f
Tmax
?
What is the value of transition current (I
CfT
) ?

Solution:






for
MHz
mA
mV

mA

6 . 10
10 25 . 15
01 0
25
10 ) 1 5 ( 10 25 . 0
2
1
01 . 0
/
) (
2
1
9 12 9
=
= + + = =
+ + =

T
T
C
C
jEt F
T
f
. f
I
I
q kT
C C
f

pF 1 , pF 5 , ns 25 . 0 , 100 = = = =

C C
jEt F
MHz 636
10 25 . 0 2
1
2
1
MHz 393 mA 1
MHz 88 mA 1 . 0
9
max
=

= =
= =
= =

F
T
T C
T C
f
f I
f I

Omid Shoaei, Univ. of Tehran


33
A Simple High-Freq. Model for CE with Current Drive
Addition of r
C
max
9
12
12 9
max
max
2 1 MHz 318
mA 6 . 0
10 0.25
mV 25
10 ) 1 5 (
/
) (
MHz 568
) 10 1 30 10 25 . 0 ( 2
1
) ( 2
1
2
1
6 . 0
T T
-
F
jEt T f C
C F
T
C F
T
f / f
q kT
C C I
C r
f
C r
f
C
I
= =

+ = + =
=
+
=
+
=
+ =




mA

Omid Shoaei, Univ. of Tehran


34
A Simple High-Freq. Model for CE with Current Drive
r
B
r

i
Out
=

i
C
g
m
v
BE
v
BE
B
i
B r
C
C
( ) ( )
( ) ( )
1)
1
2)
1
Note: For 0
1
1
m
m B E c
C m B E c B E C c c B E
C
m
b B E m B E c m B E
C
C b
m C
b m
C m
g sC
g v i
i g v i v r i i v
sC sr C
g sC
i g sC v g v i g sC g v
sr C
r i g s C C
g sC sr C
i g sC g
sr C g sC

= = =
+
| |
= + + = + +
|
|
+
\ .
= = + +
| || +
= + +
|
|
+
\ .\
( ) ( )
( ) ( ) ( ) ( )
2
Ignoring components
1
m
c
m C m m
b
c m
m
c m
b
C m C m g
C
i
g sC g sr C g g g sC
i
s
i g sC
g sC
i g r
i
g s C C r g g C sr C C r g g C

|
|
|
.
| |
+ + + +
|
|

\ .

=
( (
+ + + + + + + +

Modification:
Omid Shoaei, Univ. of Tehran
35
A Simple High-Freq. Model for CE with Current Drive
Another approach (Lemma):
B'C' ' ' '
T
The voltage across :
V ( ) (1 )
So one can simply replace with (1 ) in previous equation for f (2-18)
2 ( ) 2 ( )
1
(2
2 ( )
be m C be be m C
m C
m m
T T
m C
T
C
m
C
V g r V V g r
C g r C
g g
f f
C C C C g r C
f
C C
r C
g

= +
+
= =
+ + +
=
+
+

-24)
( ) ( )
( )
( ) ( )
1
,
1 1
1
m
T
C m C m
C
T m
g r
r C C r g r C r C C r g r C
C C
r C
g

=
= =
+ + + + + +
+
+
Omid Shoaei, Univ. of Tehran
36
CE Configuration with Voltage Drive
Short cicuit tranconductance A
G
= i
out
/ v
in

The configuration is the same as figure below but R
S
is much smaller than
r

. The small-signal model is shown below (for zero R


S
).









Low- Frequency:
Neglect all capacitances.
m
in
Out
B
g
v
i
r r = <<

for
R
L
R
s
C

v
in
v
CC
r
B
r

v
in
i
Out
=

i
C
g
m
v
BE
v
BE
B
Fig.2.12-a Fig.2.12-b
Omid Shoaei, Univ. of Tehran
37
CE Configuration with Voltage Drive
High- Frequency:
















[ ( )]
(neglecting current)
( )
[ ( )]
1
for or
1 /
1
B
BE in
B
Out m BE
m B
Out Out B BE B
m
in BE in B
B
B B B B
Out m Out m
G
in in B
B
g
v v
g g s C C
i g v C
g g
i i g g v g
g
C C
v v v g g s C C
s
g g
g g r r g g g
i g i g
A
C C
v v j f f
s
g



=
+ + +

+
= = =
+
+ + +
+
+
>> << +
= =
+
+
+
(2 25)
1
where (2 26)
2 ( )
B
B
f
r C C

=
+
This is true for
frequencies
near and
smaller than f
T

if:
f
T
<<g
m
/ C

Omid Shoaei, Univ. of Tehran
38
CE Configuration with Voltage Drive








Unity-gain frequency for A
G
(Transconductance) is meaningless, i.e. we are
not interested to know where g
m
=1 A/V!!
gain - current ctance transcondu for
dB 3
= f f
B
in
Out
G
v
i
A =
m
g log
dB 3 -
dB/decade 20
slope
1 log
B
f
f
Fig.2.13
A
G
rolls off with slope of unity
gain i.e. f
B
.g
m
Omid Shoaei, Univ. of Tehran
39
CE Configuration with Voltage Drive
( ) ( ) ( ) 1
Defining: ( ) (2 27)
( ) 1 (
Besides: 1 1
( )
and recall the definition:
m F
B B D jEt B jEt
jEt
B B jEt
m F
B B
jEt
m F C F
jEt
jEt
Cft jEt
g
r C C r C C C r C C
C C
r C C
g
r C C
C C
g I
KT
C C
C C
q
I C


| |
+ = + + = + +
|
|
+
\ .
= +
| |
+ = + )
|
|
+
\ .
+ = +
+
+
= +
( )
( )
/
1 1 ( I
from (I) and (II) we can rewrite as follows:
1
(2 28)
2 ( ) 2
F
m F C
jEt Cft
B
Cft
B
B B C Cft
KT q
C
g I
C C I
f
I
f
r C C I I

+ = + )
+
= =
+ +
Omid Shoaei, Univ. of Tehran
40
CE Configuration with Voltage Drive
0
max
( )
1 1
2 2 [ ( ) ]
from plot of vs. is as follows:
2 ( )
I
C
B B jEt C
B B
B B jEt C
C f T
B B C
B C C f T
r C C r C
f f
r C C r C
I
f f I
I I

=
= + +
= = =
+ +
=
+

B
f
This image cannot currently be displayed.
C
I
B
2
1
Fig.2.14
Note: This equation can be modified as follows too (by adding collector
resistor related time constant):
Decreasing IC increases the corner
frequency f
B
(pole of transconductance)
but reduces the value of g
m
=I
C
/V
T
(see
both in (2-25)).
Omid Shoaei, Univ. of Tehran
41
CE Configuration with Voltage Drive
1
2 ( )
so if
1
2 ( )
B
B
B B
B
r C C
r f
f f r r
f r
r C C



+
= = > >
+

1
2 ( )
1

2 ( )
B
B
m
T B m
r C C
f
g
f r g
C C


+
= =
+

/
Definition: for we have because 1 .
C CTB T B B m
B
kT q
I I f f r / g
r
= = = =
max
The max. value of is reached for currents smaller than .
1 1
for 0
2 2 [ ( ) ]
B CfT
C B
B B jEt C
f I
I f
r C C r C

= =
+ +
So voltage drive BW is larger than current drive BW for .
(This is almost the case; i.e. always ).
B
B
r r
r r

>
>
1
So if or .
1
could be smaller than for small (or small ) values.
B T B m B
m
B m C
m
f f r g r
g
r g I
g
> <
Omid Shoaei, Univ. of Tehran
42
CE Configuration with Voltage Drive
This maximum depends only the base resistance and both collector and
emitter junction capacitances, and as can be noted it is independent of the
base transit time
F
!
In general, it can be verified that only r
B
limits the high frequency
performance of bipolar junction transistor. For r
B
=0 infinite BW can be
achieved!!!
Omid Shoaei, Univ. of Tehran
43
CE Configuration with Voltage Drive
Example:

max
Calculate , , for 0.01 , 0.1 , 1 ?
if 30 ?
100, 0.25 , 6 , 100
T B CTB C
T C
F jEt jCt B
f f I I
f r
C C r
=
=
= = + = =
mA mA mA
ns pF
from previous example: 10 , 88 , 393 respectively for
0.01 , 0.1 , 1 .
T
C
f
I
=
=
MHz MHz MHz
mA mA mA
( )
3
12
9
12 12 12
max
/ 25 10
6 10 600
0.25 10
( ) 100(6 10 ) 30 1 10 630 10 sec
1
2
248 , 216 , 95 respectively for 0.01 , 0.1 , 1 .
1
252.6
2
Cft jEt
F
B B jEt C
CfT
B
B C CfT
B C
B
B
KT q
I C C A
r C C r C
I
f
I I
f I
f

= + = =

= + + = + =
=
+
= =
= =

MHz MHz MHz mA mA mA

MHz
Omid Shoaei, Univ. of Tehran
44
CE Configuration with Voltage Drive
( )
0 12
12
1 1
252.6
2 2 630 10
The current at which reduces to one half of its maximum:
1 0.6
0.6 126.3
2 630 10 1.2
The current at which :
/ 25
0.25
100
C
B
I
B
C B
C CfT B
C B T
CTB
B
f
I f
I I f
I f f
kT q
I
r

= = =

= = = =

=
= = =
MHz

mA MHz

mV
mA
12
9 12 9
0.6 1 0.6
( 0.25 ) 252.6 178.3
0.25 0.6 2 630 10 0.85
Also recall:
1 /
( )
2
1 26
0.25 0.25 10 (5 1) 10 0.874 10
2 025
B C
F jEt
T C
C
T
f I
kT q
C C
f I
I
f .


= = =
+
= + +
= = + + =
mA
mA MHz MHz
mA mA

mV
mA
mA
Omid Shoaei, Univ. of Tehran
45
Conclusion
f

, f
T
and f
B
are the most important frequency parameters of a bipolar
junction transistor (BJT). They all depend on the parameters shown in
Fig.2.4:
and are determined by technology.
can be varied by varying the current .
can be varied only by taking different (larger) layouts.
F
m C
B
g I
r

m
g
F

B
r

C

f
T
f
B
f
Fig.2.4
i.e. , , , and junction capacitances , .
m F B jEt
g r C C


Omid Shoaei, Univ. of Tehran
46
CC and CB Configurations
CC: two bias sources: 1- bias voltage at base
2- emitter current source
low- frequency
I
E
with 1/ margin error is equal to I
C
. Having a fixed I
C
requires a constant
V
BE
, so only a DC shift from base to emitter and v
Out
= v
in
and Z
IN
= .


R
S
v
in
Z
IN
I
E
Z
OUT
v
Out
Fig.2.15-a
v
in
r
B
C

R
S
C

g
m
v
BE
v
BE
Z
IN
v
Out
Z
OUT
Fig.2.15-b
Omid Shoaei, Univ. of Tehran
47
CC and CB Configurations
follower source i.e.
MOST For : Note
: have we for
: low to high from converted is Impedance
m o mb m
LF OUT
AC
B S
m
LF OUT
AC
AC
B S
LF Out
g g g g
R
r R
g
R
r r R
R
1 1
1
1
) 29 2 (
1

+ +
=
+
+
>>

+
+ +
=



Omid Shoaei, Univ. of Tehran
48
CC and CB Configurations
High- Frequency
At high frequencies caps have to be taken into accounts:

( 1 ) ( ) 0
1
( 2 ) ( ) ( ) ( ) 0 where
(2) ( ) ( )
( )
into (1)
( )
x m BE BE
BE BE x
B S
BE x
BE x
i g v g s C v
g s C v g s C v v g
r R
v g g s C C v s C g
s C g
v v
g g s C C



+ + + =
+ + + + = =
+
( + + + = +

+
=
+ + +
r
B
C

R
S
C

g
m
v
BE
v
BE
i
x
v
x
+
-
2
1
Fig.2.16
Omid Shoaei, Univ. of Tehran
49
CC and CB Configurations
( ) ( )
( )
( )
( )
( ) ( )
1
( )
1 1
1 1
1 /
( 1
1 1
m
x BE m x
x
OUT
x m
m
m
S B
Z
m
S B
g g s C s C g
i v g g s C v
g g s C C
g g s C C
v
Z
i g g s C g s C
C C
s
g g g g
C g g g C
s
g g g
r R r
j f f
g
r R r







+ + +
= + + =
+ + +
+ + +
= =
+ + +
+
+
+ +
=
+ | | | |
+ +
| |
+
\ . \ .
| |
+
|
+
+
\ .
=
| | | |
+
| |
+
\ . \ .
1 2
/ ) ( 1 / )
1
for 0 &
2 ( ) [ || ( ) ]
P P
Z S B Z B
B S
j f f j f f
f R r r f f
C C r r R


+ +
= = <<
+ +
Omid Shoaei, Univ. of Tehran
50
CC and CB Configurations
1
2
1 2
2 2
1
Very high frequency, that can be ignored.
2 2 ( )
1 1
1
1
1 1
So Provided ( ) i.e. :
m m
P T
P
S B
S B S B S B
OUT LF
m
m
S B
m S B p p
g g g
f f
C C
g
f
C R r C
r R r R r r R r
R
g
g
r R r
g R r C C f f



+
=
= =
+
+
+ + + +
= + =
+ | | | |
+
| |
+
\ . \ .
+



1 1
2 ( ) 2
( )
1 /
,
1
1 / (2 30)
2
/ 1 /
( ) , ( )
2
C f T
B
B B C C f T
B B jE t C
B
OUT OUT LF
C
T T
F C C f T
C f T jE t F jE t C
F T C
I
f
r C C I I
r C C r C
j f f
Z R
I
i f f f
I I
kT q kT q
I C C C C r C
f I


= =

+ +

= + +

+
=

+ =

= + = + + +

Omid Shoaei, Univ. of Tehran


51
CC and CB Configurations
1 . 0 1 10 100 1000 MHz
f
10
OUT
Z
1 mA 25 . 0 = =
B m CTB
r g I
100
k 1
k 10
mA 5 . 2
A 25
A 5 . 2 =
C
I
inductive
resistive
capacitive
1 . 0 1 10 100 1000 MHz
f
1 . 0
01 . 0
10
1
mA
C
I
T
f
B
f
mA 62 . 0 =
CfT
I
mA 25 . 0 =
CTB
I
Fig.2.17.
Position of pole and zero & bode diagram of Z
OUT
of
emitter follower for =100, r
B
=100 ,
F
=0.25 ns,
C
jEt
+C

=6 pF.
1
2
c
T
I
F
f

=
0
1
2
c
B
I
B
f

=
/
where
T B C CTB
B
KT q
f f I I
r
= = =
Lower
1
C
B
m
T B
I
r
g
f f
<
<
Higher
1
C
B
m
T B
I
r
g
f f
>
>

1
1
B
OUT OUT LF
T
f
j
f
Z R
f
j
f
+
= =
+
Omid Shoaei, Univ. of Tehran
52
CC and CB Configurations
In previous figure, the asymptotic values of f
B
and f
T
are plotted versus I
C
.
This plot gives the positions of the zero and the pole with I
C
as such is
called pole-zero position plot.
@ I
CTB
, g
m
r
B
= 1 : f
T
= f
B
so a pure resistance results, i.e. r
B
.
At lower I
C
, f
T
(pole) < f
B
(zero) so the output impedance rolls off vs.
frequency (capacitive).
At higher I
C
, f
B
< f
T
so there is a region in which output impedance
increases with frequency. This region is called an inductive region.
This inductance could cause instability if combined with parasitic cap. at
the output terminal, so it is safer to reduce the biasing current.

Omid Shoaei, Univ. of Tehran
53
CC and CB Configurations
B B m
m
f
B
m
m
B
T
m
f
B S
T
B
LF OUT
r r g
g
jf
C C r
C C
g
g
f
f
g
jf
r R
f f j
f f j
R jf
=
|
|
.
|

\
|
=

+
+
|
|
.
|

\
|
=

|
|
.
|

\
|
=
+
+
+
=


) (
1
) ( Z
) ( 2
1
) ( 2
1
1
) ( Z
/ 1
/ 1
) ( Z
OUT
OUT
OUT

neglecting
So for every I
C
the output impedance of the emitter follower at very high
frequency is equal to r
B
.
Also note that at I
CBT
we have .
TB C
T
I I
m
B
I
V
g
r
TB C C
= =
=
1
Omid Shoaei, Univ. of Tehran
54
CC and CB Configurations
Note previous results obtained for


However, for (perhaps more practical case)
S B Z B
R r r f f

<< <<
1 2
1
2 ( )
moves to a lower frequency
unchanged; and
moves to a higher frequency
B S Z
p T p s
r r R f f
r C C
C
f f f R C
g

<< << =
+
= =

Omid Shoaei, Univ. of Tehran


55
CB Configurations
The input impedance of CB is
exactly the same as the output
impedance of the Emitter-Follower.
So the same pole-zero position plot
can used for CB input impedance.

Particularly the previous assumption
for the source impedance could be
more practical:
S B Z B
R r r f f

<< <<
Omid Shoaei, Univ. of Tehran
56
Comparison between MOSTs and Bipolar transistors
Maximum Frequency of Operation:
f
T
is assumed as the parameter (unity-gain of amplifier can be discussed
too!).
from bipolar:
for MOST, it can be shown that:



F
(transit time) for bipolar is likely to be smaller for a bipolar transistor
than for a MOST because the vertical W
B
is easier to make smaller than the
lateral L
eff
. [for 0.1 m, this time constant is about 1 ps <=> f
T
160 GHz]

sat
max
2
1
v
W
f
B
F
F
T
= =

where
sat
v
L
eff
F
=
Omid Shoaei, Univ. of Tehran
57
Comparison between MOSTs and Bipolar transistors
When saturation velocity and so the drain saturation current happens well
before pinch-off!
) 33 2 (
2
1
2
1
2
1
) 32 2 (
) 31 2 ( ) (
sat sat
sat ,
max
sat sat ,
sat sat
= =
=
= =
eff ox eff
ox
GS
m
T
ox m
TH GS ox d D
L
v
C L W
v C W
C
g
f
v C W g
V V C W v Q v I
MOST
Bipolar
T
f
MB
I
B
W
v
sat
2
1
eff
L
v
sat
2
1
I
Fig.2.18
Omid Shoaei, Univ. of Tehran
58
Comparison between MOSTs and Bipolar transistors
In long-channel since the quadratic relations already exist:





In short-channel considering short-channel effects (i.e. mobility
degradation



As shown in the Fig.2.18 increasing I beyond some point makes f
T

saturated. This can be somehow explained by equations 2-32 & 2-35.
Increasing I
D
is done by increasing (V
GS
-V
TH
). For very large I
D
and so (V
GS
-
V
TH
) if (V
GS
-V
TH
)>>1 then 2-35 becomes:
) 34 2 ( ) (
2
1
) ( /
2
1
2
1
) ( ) (
2
1
2
max
2
=

= =
= =
TH GS
eff
n
ox eff
TH GS eff ox n
GS
m
T
TH GS
eff
ox n m TH GS
eff
ox n D
V V
L C L W
V V L W C
C
g
f
V V
L
W
C g V V
L
W
C I


) 35 2 (
1
) ( 1
) (
2
1
2
=
+

=
C eff TH GS
TH GS
ox n D
E L V V
V V
L
W
C I

where
) 36 2 ( , ) (
2
1
) (
2
1
0
= = =
C
n TH GS ox C n TH GS
ox
D
E
v
V V C W E V V
L
W
C
I
sat

Omid Shoaei, Univ. of Tehran


59
Comparison between MOSTs and Bipolar transistors
v
0
0

C
E E
Fig.2.19
Omid Shoaei, Univ. of Tehran
60
Comparison between MOSTs and Bipolar transistors
Tranconductance-Current Ratio:









Bipolar offers a better current drive capability. Less input voltage is
required to drive a larger output current!

|
.
|

\
|
I
g
m
invertion
weak
invertion
strong
saturation
velocity
q kT /
1
q kT n /
1
bipolar
MOST
Fig.2.20
I
Drive capability

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