Vous êtes sur la page 1sur 6

FDD6688/FDU6688

June 2004

FDD6688/FDU6688
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

Features
84 A, 30 V. RDS(ON) = 5 m @ VGS = 10 V RDS(ON) = 6 m @ VGS = 4.5 V

Low gate charge Fast switching

Applications
DC/DC converter Motor Drives

High performance trench technology for extremely low RDS(ON)

D G S
I-PAK (TO-251AA) G D S
G

D-PAK TO-252 (TO-252)

Absolute Maximum Ratings


Symbo l
VDSS VGSS ID PD

TA=25oC unless otherwise noted

Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)

Ratings
30 20 84 100 83 3.8 1.6 55 to +175

Units
V A W

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)

1.8 40 96

C/W

Package Marking and Ordering Information


Device Marking FDD6688 FDU6688 Device FDD6688 FDU6688 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13 Tube Tape width 12mm N/A Quantity 2500 units 75

2004 Fairchild Semiconductor Corporation

FDD6688/FDU6688 Rev F(W)

FDD6688/FDU6688

Electrical Characteristics
Symbol
WDSS IAR

TA = 25C unless otherwise noted

Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current

Test Conditions
Single Pulse, VDD = 15 V, ID = 21A

Min Typ Max Units


370 21 mJ A

Drain-Source Avalanche Ratings (Note 2)

Off Characteristics
BVDSS BVDSS TJ IDSS IGSS DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)

VGS = 0 V,

ID = 250 A

30 24 1 100

V mV/C A nA

ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V

On Characteristics
VGS(th) VGS(th) TJ RDS(on)

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance

VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 18 A VGS = 4.5 V, ID = 16.5 A VGS = 10 V, ID = 18 A, TJ=125C VGS = 10 V, VDS = 5 V, VDS = 5 V ID = 18 A

1.8 5 4 5 6

V mV/C

5 6 10

ID(on) gFS

50 88

A S

Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)

VDS = 15 V, f = 1.0 MHz

V GS = 0 V,

3845 930 368

pF pF pF

VGS = 15 mV,

f = 1.0 MHz

1.2

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge

VDD = 15 V, VGS = 10 V,

ID = 1 A, RGEN = 6

15 13 62 36

27 23 99 58 56

ns ns ns ns nC nC nC

VDS = 15V, VGS = 5 V

ID = 18 A,

37 10 14

FDD6688/FDU6688 Rev F(W)

FDD6688/FDU6688

Electrical Characteristics (continued)


Symbol
VSD trr Qrr

TA = 25C unless otherwise noted

Parameter
DrainSource Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge

Test Conditions
VGS = 0 V, IS = 3.2 A

Min Typ Max Units


0.7 39 31 1.2 V nS nC

DrainSource Diode Characteristics and Maximum Ratings


(Note 2)

IF = 18 A ,diF/dt = 100 A/s

Notes:8 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) RJA = 40C/W when mounted on a 1in2 pad of 2 oz copper

b) RJA = 96C/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD R DS(ON)

where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A

FDD6688/FDU6688 Rev F(W)

FDD6688/FDU6688

Typical Characteristics

100

RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE

VGS = 10V 4.5V

1.8 4.0V VGS = 3.5V 1.6

ID, DRAIN CURRENT (A)

80

3.5V

60

1.4 4.0V 1.2 4.5V 5.0V 6.0V 1 10V

40

3.0V
20

0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V)

0.8 0 20 40 60 80 100 ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.


0.012 RDS(ON), ON-RESISTANCE (OHM)

1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o

ID =18A VGS = 10V

ID = 9 A
0.01

0.008

TA = 125oC

0.006

TA = 25oC
0.004

0.002

125

150

175

10

TJ, JUNCTION TEMPERATURE ( C)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Temperature.


80

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.


100

VDS = 5V
ID, DRAIN CURRENT (A) 60

IS, REVERSE DRAIN CURRENT (A)

VGS = 0V

10 1

TA = 125oC

25oC

40

0.1
-55oC

TA = 125oC
20

0.01 0.001 0.0001

25oC -55oC
0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V)

0.2

0.4

0.6

0.8

1.2

1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature

FDD6688/FDU6688 Rev F(W)

FDD6688/FDU6688

Typical Characteristics

10 VGS, GATE-SOURCE VOLTAGE (V)

5000 ID =18A VDS = 10V 20V 15V 4000 CAPACITANCE (pF) CISS 3000 f = 1MHz VGS = 0 V

2000 COSS 1000 CRSS

0 0 20 40 Qg, GATE CHARGE (nC) 60 80

0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics


1000
P(pk), PEAK TRANSIENT POWER (W) 100

Figure 8. Capacitance Characteristics


SINGLE PULSE RJA = 96C/W TC = 25C

ID, DRAIN CURRENT (A)

100
RDS(ON) LIMIT

100s 1ms 10ms 100ms 1s 10s VGS = 10V SINGLE PULSE RJA = 96oC/W TC = 25oC DC

80

10

60

40

0.1

20

0.01 0.01

0.1

10

100

0 0.01

0.1

10

100

1000

VDS, DRAIN-SOURCE VOLTAGE (V)

t1, TIME (sec)

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum Power Dissipation

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

1
D = 0.5 0.2

0.1

0.1 0.05

RJAt) = r(t) * RJA RJA = 96 C/W P(pk) t1


SINGLE PULSE

0.01

0.02 0.01

0.001

t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2

0.0001 0.0001

0.001

0.01

0.1
t1, TIME (sec)

10

100

1000

Figure 11. Transient Thermal Response Curve


Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

FDD6688/FDU6688 Rev F(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx FAST ActiveArray FASTr Bottomless FPS CoolFET FRFET CROSSVOLT GlobalOptoisolator DOME GTO EcoSPARK HiSeC E2CMOS I2C EnSigna i-Lo FACT ImpliedDisconnect FACT Quiet Series

ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC Across the board. Around the world. OPTOPLANAR PACMAN The Power Franchise POP Programmable Active Droop

Power247 PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SerDes SILENT SWITCHER SMART START SPM Stealth

SuperFET SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET VCX

DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I11