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TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER

SLIS032 JULY 1995

D D D D D D D

Low rDS(on) . . . 5 Typical Avalanche Energy . . . 30 mJ Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current 500-mA Typical Current-Limiting Capability Output Clamp Voltage . . . 50 V Devices Are Cascadable Low Power Consumption

DW OR N PACKAGE (TOP VIEW)

description
The TPIC6B595 is a monolithic, high-voltage, medium-current power 8-bit shift register designed for use in systems that require relatively high load power. The device contains a built-in voltage clamp on the outputs for inductive transient protection. Power driver applications include relays, solenoids, and other mediumcurrent or high-voltage loads. This device contains an 8-bit serial-in, parallel-out shift register that feeds an 8-bit D-type storage register. Data transfers through both the shift and storage registers on the rising edge of the shift-register clock (SRCK) and the register clock (RCK), respectively. The storage register transfers data to the output buffer when shiftregister clear (SRCLR) is high. When SRCLR is low, the input shift register is cleared. When output enable (G) is held high, all data in the output buffers is held low and all drain outputs are off. When G is held low, data from the storage register is transparent to the output buffers. When data in the output buffers is low, the DMOS-transistor outputs are off. When data is high, the DMOStransistor outputs have sink-current capability. The serial output (SER OUT) allows for cascading of the data from the shift register to additional devices.

NC VCC SER IN DRAIN0 DRAIN1 DRAIN2 DRAIN3 SRCLR G GND

1 2 3 4 5 6 7 8 9 10

20 19 18 17 16 15 14 13 12 11

NC GND SER OUT DRAIN7 DRAIN6 DRAIN5 DRAIN4 SRCK RCK GND

NC No internal connection

logic symbol
G RCK SRCLR SRCK SER IN 9 12 8 13 3 R EN3 C2 SRG8 C1 1D 2 4 5 6 7 14 15 16 17 2 18 DRAIN0 DRAIN1 DRAIN2 DRAIN3 DRAIN4 DRAIN5 DRAIN6 DRAIN7 SER OUT

This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.

Outputs are low-side, open-drain DMOS transistors with output ratings of 50 V and 150-mA continuous sinkcurrent capability. Each output provides a 500-mA typical current limit at TC = 25C. The current limit decreases as the junction temperature increases for additional device protection. The TPIC6B595 is characterized for operation over the operating case temperature range of 40C to 125C.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright 1995, Texas Instruments Incorporated

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TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER


SLIS032 JULY 1995

logic diagram (positive logic)


G RCK SRCLR SRCK SER IN 9 12 8 D 13 C1 CLR 3 D C1 CLR D C2 6 DRAIN2 D C2 5 DRAIN1 4

DRAIN0

D C1 CLR

D C2 7 DRAIN3

D C1 CLR

D C2 14 DRAIN4

D C1 CLR

D C2 15 DRAIN5

D C1 CLR

D C2 16 DRAIN6

D C1 CLR

D C2 17 DRAIN7

D C1 CLR

D C2 10, 11, 19 18 GND

SER OUT

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TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER


SLIS032 JULY 1995

schematic of inputs and outputs


EQUIVALENT OF EACH INPUT VCC TYPICAL OF ALL DRAIN OUTPUTS

DRAIN 50 V

Input 25 V 12 V 20 V

GND GND

absolute maximum ratings over recommended operating case temperature range (unless otherwise noted)
Logic supply voltage, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Logic input voltage range, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to 7 V Power DMOS drain-to-source voltage, VDS (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Continuous source-to-drain diode anode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Pulsed source-to-drain diode anode current (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A Pulsed drain current, each output, all outputs on, ID, TC = 25C (see Note 3) . . . . . . . . . . . . . . . . . . . 500 mA Continuous drain current, each output, all outputs on, ID, TC = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mA Peak drain current single output, IDM,TC = 25C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Single-pulse avalanche energy, EAS (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mJ Avalanche current, IAS (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C to 150C Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C to 125C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65C to 150C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values are with respect to GND. 2. Each power DMOS source is internally connected to GND. 3. Pulse duration 100 s and duty cycle 2%. 4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25C, L = 200 mH, IAS = 0.5 A (see Figure 4). DISSIPATION RATING TABLE PACKAGE DW N TC 25C POWER RATING 1389 mW 1050 mW DERATING FACTOR ABOVE TC = 25C 11.1 mW/C 10.5 mW/C TC = 125C POWER RATING 278 mW 263 mW

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TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER


SLIS032 JULY 1995

recommended operating conditions


MIN Logic supply voltage, VCC High-level input voltage, VIH Low-level input voltage, VIL Pulsed drain output current, TC = 25C, VCC = 5 V (see Notes 3 and 5) Setup time, SER IN high before SRCK, tsu (see Figure 2) Hold time, SER IN high after SRCK, th (see Figure 2) Pulse duration, tw (see Figure 2) Operating case temperature, TC 500 20 20 40 40 125 4.5 0.85 VCC 0.15 VCC 500 MAX 5.5 UNIT V V V mA ns ns ns C

electrical characteristics, VCC = 5 V, TC = 25C (unless otherwise noted)


PARAMETER V(BR)DSX VSD VOH VOL IIH IIL ICC ICC(FRQ) IN IDSX Drain-to-source breakdown voltage Source-to-drain diode forward voltage High-level g output voltage, g , SER OUT Low-level output voltage, g , SER OUT High-level input current Low-level input current Logic supply current Logic supply current at frequency Nominal current Off state drain current Off-state ID = 1 mA IF = 100 mA IOH = 20 A, VCC = 4.5 V IOH = 4 mA, VCC = 4.5 V IOL = 20 A, VCC = 4.5 V IOL = 4 mA, VCC = 5.5 V, VCC = 5.5 V, VCC = 5 5.5 5V fSRCK = 5 MHz, CL = 30 pF, All outputs off, VDS(on) = 0.5 V, IN = ID, TC = 85C VDS = 40 V, VCC = 5.5 V VDS = 40 V, ID = 100 mA, ID = 100 mA, VCC = 4.5 V ID = 350 mA, VCC = 4.5 V VI = VCC VI = 0 All outputs off All outputs on See Figures 2 and 6 See Notes 5, 6, and 7 20 150 0.4 90 0.1 0.15 4.2 6.8 5 8 5.7 9.5 4.4 4 TEST CONDITIONS MIN 50 0.85 4.49 4.2 0.005 0.3 0.1 0.5 1 1 100 300 5 1 TYP MAX UNIT V V V V A A A mA mA A

VCC = 5.5 V, TC = 125C VCC = 4.5 V TC = 125C, See Notes 5 and 6 and Figures 7 and 8

rDS(on)

Static drain-source on-state resistance

NOTES: 3. 5. 6. 7.

VCC = 4.5 V 5.5 8 Pulse duration 100 s and duty cycle 2%. Technique should limit TJ TC to 10C maximum. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a voltage drop of 0.5 V at TC = 85C.

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TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER


SLIS032 JULY 1995

switching characteristics, VCC = 5 V, TC = 25C


PARAMETER tPLH tPHL tr tf ta trr Propagation delay time, low-to-high-level output from G Propagation delay time, high-to-low-level output from G Rise time, drain output Fall time, drain output Reverse-recovery-current rise time Reverse-recovery time , , IF = 100 mA, di/dt = 20 A/s, See Notes 5 and 6 and Figure 3 CL = 30 pF, , ID = 100 mA, , See Figures 1, 2, and 9 TEST CONDITIONS MIN TYP 150 90 200 200 100 300 MAX UNIT ns ns ns ns ns

NOTES: 5. Technique should limit TJ TC to 10C maximum. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.

thermal resistance
PARAMETER RJA resistance junction-to-ambient junction to ambient Thermal resistance, DW package N package TEST CONDITIONS All 8 outputs with equal power MIN MAX 90 95 UNIT C/W

PARAMETER MEASUREMENT INFORMATION


5V 2 8 13 Word Generator (see Note A) 3 12 9 SRCLR SRCK SER IN RCK G GND 10, 11, 19 TEST CIRCUIT DRAIN1 VOLTAGE WAVEFORMS VCC ID RL = 235 DUT DRAIN 4 7, 14 17 Output G SER IN RCK SRCLR 24 V SRCK 7 6 5 4 3 2 1 0 5V 0V 5V 0V 5V 0V 5V 0V 5V 0V 24 V 0.5 V

CL = 30 pF (see Note B)

NOTES: A. The word generator has the following characteristics: tr 10 ns, tf 10 ns, tw = 300 ns, pulsed repetition rate (PRR) = 5 kHz, ZO = 50 . B. CL includes probe and jig capacitance.

Figure 1. Resistive-Load Test Circuit and Voltage Waveforms

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TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER


SLIS032 JULY 1995

PARAMETER MEASUREMENT INFORMATION


5V G 5V 2 8 13 Word Generator (see Note A) 3 12 9 V SRCLR CC SRCK SER IN RCK G GND 10, 11, 19 TEST CIRCUIT DUT DRAIN CL = 30 pF (see Note B) ID 4 7, 14 17 Output RL = 235 Output 90% 10% tr SWITCHING TIMES 5V SRCK tsu 50% 0V th 5V SER IN 50% tw INPUT SETUP AND HOLD WAVEFORMS NOTES: A. The word generator has the following characteristics: tr 10 ns, tf 10 ns, tw = 300 ns, pulsed repetition rate (PRR) = 5 kHz, ZO = 50 . B. CL includes probe and jig capacitance. 50% 0V 90% 10% tf 24 V tPLH tPHL 24 V 0.5 V 50% 50% 0V

Figure 2. Test Circuit, Switching Times, and Voltage Waveforms


TP K DRAIN Circuit Under Test IF (see Note A) L = 1 mH TP A t2 t1 t3 RG VGG (see Note B) 50 Driver IRM ta trr TEST CIRCUIT CURRENT WAVEFORM 2500 F 250 V + 25 V 0 25% of IRM 0.1 A di/dt = 20 A/s IF

NOTES: A. The DRAIN terminal under test is connected to the TP K test point. All other terminals are connected together and connected to the TP A test point. B. The VGG amplitude and RG are adjusted for di/dt = 20 A/s. A VGG double-pulse train is used to set IF = 0.1 A, where t1 = 10 s, t2 = 7 s, and t3 = 3 s.

Figure 3. Reverse-Recovery-Current Test Circuit and Waveforms of Source-to-Drain Diode

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TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER


SLIS032 JULY 1995

PARAMETER MEASUREMENT INFORMATION

5V 2 8 V SRCLR CC ID DUT SER IN RCK G GND 10, 11, 19 DRAIN 4 7, 14 17

15 V tw 10.5 Input See Note B 200 mH ID VDS VDS V(BR)DSX = 50 V MIN tav 5V 0V IAS = 0.5 A

13 SRCK Word Generator (see Note A) 3 12 9

SINGLE-PULSE AVALANCHE ENERGY TEST CIRCUIT

VOLTAGE AND CURRENT WAVEFORMS

NOTES: A. The word generator has the following characteristics: tr 10 ns, tf 10 ns, ZO = 50 . B. Input pulse duration, tw, is increased until peak current IAS = 0.5 A. Energy test level is defined as EAS = IAS V(BR)DSX tav/2 = 30 mJ.

Figure 4. Single-Pulse Avalanche Energy Test Circuit and Waveforms

TYPICAL CHARACTERISTICS
PEAK AVALANCHE CURRENT vs TIME DURATION OF AVALANCHE
10 TC = 25C IAS Peak Avalanche Current A I CC Supply Current mA 4 2 2.5 VCC = 5 V TC = 40C to 125C

SUPPLY CURRENT vs FREQUENCY

2 1

1.5

0.4

0.5 0.2

0.1 0.1

0.2

0.4

10

0 0.1

10

100

tav Time Duration of Avalanche ms

f Frequency MHz

Figure 5

Figure 6

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TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER


SLIS032 JULY 1995

TYPICAL CHARACTERISTICS
DRAIN-TO-SOURCE ON-STATE RESISTANCE vs DRAIN CURRENT
r DS(on) Drain-to-Source On-State Resistance 18 16 14 12 10 8 6 4 2 0 0 100 200 300 400 500 ID Drain Current mA 600 700 TC = 40C TC = 25C TC = 125C VCC = 5 V See Note A

r DS(on) Static Drain-to-Source On-State Resistance

STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE vs LOGIC SUPPLY VOLTAGE


8 7 6 5 TC = 25C 4 3 2 1 0 4 6 6.5 4.5 5 5.5 VCC Logic Supply Voltage V 7 TC = 40C ID = 100 mA See Note A TC = 125C

Figure 7
SWITCHING TIME vs CASE TEMPERATURE
300 ID = 100 mA See Note A tf 250 Switching Time ns

Figure 8

200

tr

150

tPLH

100

tPHL

50 50

25

0 25 50 75 100 TC Case Temperature C

125

Figure 9
NOTE C: Technique should limit TJ TC to 10C maximum.

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TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER


SLIS032 JULY 1995

THERMAL INFORMATION
MAXIMUM CONTINUOUS DRAIN CURRENT OF EACH OUTPUT vs NUMBER OF OUTPUTS CONDUCTING SIMULTANEOUSLY
I D Maximum Peak Drain Current of Each Output A 0.45 I D Maximum Continuous Drain Current of Each Output A VCC = 5 V 0.4 0.35 0.3 0.25 0.2 0.15 0.1 TC = 125C 0.05 0 1 2 3 4 5 6 7 8 N Number of Outputs Conducting Simultaneously TC = 100C 0.5 0.45 0.4 0.35 d = 50% 0.3 0.25 d = 80% 0.2 0.15 0.1 0.05 0 1 2 3 4 5 6 7 8 N Number of Outputs Conducting Simultaneously VCC = 5 V TC = 25C d = tw/tperiod = 1 ms/tperiod d = 10% d = 20%

MAXIMUM PEAK DRAIN CURRENT OF EACH OUTPUT vs NUMBER OF OUTPUTS CONDUCTING SIMULTANEOUSLY

TC = 25C

Figure 10

Figure 11

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